AUIRGP50B60PD1
AUIRGP50B60PD1-E
AUTOMOTIVE GRADE
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Applications
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
C
Automotive HEV and EV
PFC and ZVS SMPS Circuits
G
Features
Low VCE(ON) NPT Technology, Positive Temperature
Coefficient
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
E
n-channel
C
C
G
Benefits
Package Type
AUIRGP50B60PD1
AUIRGP50B60PD1-E
TO-247AC
TO-247AD
E
G
TO-247AC
AUIRGP50B60PD1
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
Base Part Number
C
G
Gate
E
TO-247AD
AUIRGP50B60PD1-E
C
Collector
Standard Pack
Form
Quantity
Tube
25
Tube
25
C
E
Emitter
Orderable Part Number
AUIRGP50B60PD1
AUIRGP50B60PD1-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
75
45
150
150
40
15
60
±20
390
156
-55 to +150
Units
V
A
V
W
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
RJC
RJC
RCS
RJA
Parameter
Thermal
Resistance
Junction-to-Case
(each IGBT)
(IGBT)
(Diode) Thermal Resistance Junction-to-Case (each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
6.0 (0.21)
Max.
0.32
1.7
–––
–––
–––
Units
°C/W
g(oz)
* Qualification standards can be found at www.infineon.com
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2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
RG
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
Min.
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
0.31
1.7
2.00
2.45
2.60
3.20
4.0
-10
41
5.0
1.0
1.30
1.20
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Max. Units
Conditions
—
V
VGE = 0V, IC = 500µA
—
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
—
Ω 1MHz, Open Collector
2.35
IC = 33A, VGE = 15V
2.85
IC = 50A, VGE = 15V
V
2.95
IC = 33A, VGE = 15V, TJ = 125°C
3.60
IC = 50A, VGE = 15V, TJ = 125°C
5.0
V
IC = 250µA
—
mV/°C VCE = VGE, IC = 1.0mA
—
S
VCE = 50V, IC = 33A,PW = 80µs
500
µA VGE = 0V, VCE = 600V
—
mA VGE = 0V, VCE = 600V,TJ = 125°C
1.70
IF = 15A
V
1.60
IF = 15A, TJ = 125°C
±100
nA VGE = ±20V, VCE = 0V
Min.
—
—
—
—
—
—
—
—
—
Typ.
205
70
30
255
375
630
30
10
130
Max.
308
105
45
305
445
750
40
15
150
11
580
480
1060
26
13
146
15
3648
322
56
215
163
15
700
550
1250
35
20
165
20
—
—
—
—
—
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Coes eff.
Coes eff. (ER)
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Energy Related)
—
—
—
—
—
—
—
—
—
—
—
—
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Irr
Peak Reverse Recovery Current
—
—
—
—
42
74
80
220
60
120
180
600
—
—
4.0
6.5
6.0
10
Units
nC
Ref. Fig.
4,5,6,8,9
7,8,9
10
Conditions
IC = 33A
VGE = 15V
VCC = 400V
Ref. Fig.
17
CT1
J
IC = 33A, VCC = 390V,
VGE = +15V,
ns
CT3
RG = 3.3, L = 200µH,
TJ = 25°C
CT3
11,13
WF1,WF2
J
IC = 33A, VCC = 390V,
VGE = +15V,
ns
pF
CT3
12,14
WF1,WF2
RG = 3.3, L = 200µH,
TJ = 125°C
VGE = 0V
VCC = 30V
f = 1.0Mhz
16
VGE = 0V, VCE = 0V to 480V
ns
nC
A
TJ = 150°C, IC = 150A
VCC = 480V, Vp = 600V
Rg = 22, VGE = +15V to 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C IF = 15A,
TJ = 125°C VR = 200V,
TJ = 25°C di/dt = 200A/µs
TJ = 125°C
15
3
CT2
19
21
19,20,21,22
CT5
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C
for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same
energy as Coes while VCE is rising from 0 to 80% VCES.
Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
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2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
90
450
80
400
70
350
60
300
Ptot (W)
IC (A)
50
40
250
200
30
150
20
100
10
50
0
0
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs.
Case Temperature
200
1000
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
180
160
140
IC A)
ICE (A)
100
10
120
100
80
60
40
20
0
1
10
100
0
1000
1
2
3
4
7
8
9
10
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
200
200
160
140
160
140
ICE (A)
120
100
80
120
100
80
60
60
40
40
20
20
0
0
0
1
2
3
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
180
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
180
ICE (A)
6
VCE (V)
VCE (V)
4
5
6
7
8
9
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
3
5
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
10
900
800
T J = 25°C
9
700
T J = 125°C
8
7
VCE (V)
ICE (A)
600
500
400
ICE = 15A
6
ICE = 33A
5
ICE = 50A
4
300
3
T J = 125°C
200
2
T J = 25°C
100
1
0
0
5
10
15
0
20
5
10
15
20
VGE (V)
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
100
9
F
InstantaneousF
orw
ardC
urrent -I (A
)
8
VCE (V)
7
ICE = 15A
6
ICE = 33A
5
ICE = 50A
4
3
10
TJ = 150°C
TJ = 125°C
TJ =
25°C
2
1
0
5
10
15
1
0.8
20
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1200
1000
Swiching Time (ns)
1000
Energy (µJ)
800
EON
600
EOFF
400
tdOFF
100
tF
tdON
200
tR
0
10
0
10
20
30
40
50
60
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
4
0
10
20
30
40
50
60
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
1000
1000
900
EON
700
EOFF
600
tdOFF
Swiching Time (ns)
Energy (µJ)
800
500
100
tdON
tF
400
tR
10
300
0
5
10
15
20
0
25
5
10
15
20
25
RG ( )
RG ()
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
40
10000
Cies
Capacitance (pF)
Eoes (µJ)
30
20
1000
Coes
100
Cres
10
0
10
0
100
200
300
400
500
600
700
0
20
40
VCE (V)
60
80
100
V CE (V)
Fig. 15 - Typ. Output Capacitance
Stored Energy vs. VCE
Fig. 16 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
1.4
14
Normalized V CE(on) (V)
400V
12
VGE (V)
10
8
6
4
1.2
1.0
2
0
0.8
0
50
100
150
200
Q G , Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
5
250
-50
0
50
100
150
200
T J (°C)
Fig. 18 Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I IRRM - (A)
t rr - (ns)
I F = 30A
I F = 30A
60
I F = 15A
IF = 15A
10
I F = 5.0A
40
I F = 5.0A
20
100
di f /dt - (A/µs)
1
100
1000
di f /dt - (A/µs)
1000
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
1000
800
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
600
Q RR - (nC)
IF = 30A
400
I F = 15A
IF = 5.0A
I F = 5.0A
I F = 15A
I F = 30A
200
0
100
di f /dt - (A/µs)
Fig. 21 - Typical Stored Charge vs. dif/dt
6
1000
100
100
di f /dt - (A/µs)
1000
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.01
0.02
R1
R1
J
1
R2
R2
C
2
1
i (sec)
0.157
0.000346
0.163
4.28
2
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Ri (°C/W)
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
J
0.05
0.01
0.02
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci= iRi
0.01
C
Ri (°C/W)
i (sec)
0.363
0.000112
0.864
0.001184
0.473
0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
L
L
DUT
0
VCC
80 V +
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
ICM
DUT
VCC
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.5 - Reverse Recovery Parameter Test Circuit
8
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
60
600
550
50
500
40
80
90% ICE
90% ICE
300
30
250
200
5% V CE
150
100
5% ICE
50
0
20
Eoff
0.00
0.20
TEST CURRENT
250
10
70
60
50
200
40
150
30
5% V CE
100
50
0
-50
tr
VCE (V)
VCE (V)
400
300
ICE (A)
tf
350
-100
-0.20
90
350
450
400
450
10% ICE
ICE (A)
20
10
0
0
Eon Loss
-10
0.40
-50
-0.10
0.00
0.10
-10
0.20
Time(µs)
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.4
Fig. WF3 - Reverse Recovery Waveform and
Definitions
9
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
TO-247AC Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
Part Number
AUIRGP50B60PD1
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
10
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
TO-247AD Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
Part Number
AUIRGP50B60PD1-E
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
11
2017-08-29
AUIRGP50B60PD1/AUIRGP50B60PD1-E
Revision History
Date
8/29/2017
Comments
Updated datasheet with corporate template
Corrected part marking on pages 10,11
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
2017-08-29
