AUIRGP65G40D0
AUIRGF65G40D0
AUTOMOTIVE GRADE
ULTRAFAST IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
CooliRIGBT ™
Features
•
•
•
•
•
•
Designed And Qualified for Automotive Applications
Ultra Fast Switching IGBT:70-200kHz
Extremely Low Switching Losses
Maximum Junction Temperature 175 °C
Square RBSOA
Positive VCE (on) Temperature Coefficient
C
VCE(on) typ. = 1.8V
IC@TC=100°C = 41A
G
E
Package Type
AUIRG P65G40D0
AUIRG F65G40D0
TO -247AC
TO -247AD
CE
G
TO-247AD
AUIRGF65G40D0
G C
TO-247AC
AUIRGP65G40D0
G
G a te
Base part number
TJ max = 175°C
E
n-channel
Benefits
• Optimized High Frequency Switching Applications
• Rugged Transient Performance for Increased
Reliability
• Excellent Current Sharing in Parallel Operation
Applications
• DC-DC Converter
• PFC
VCES = 600V
C
C o lle c t o r
E
E m it t e r
O rderable Part Number
Standard Pack
Form
Quantity
Tube
25
Tube
25
AUIRG P65G40D0
AUIRG F65G40D0
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
V CES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
h
Continuous Collector Current h
Nominal Current @ 200kHz i
Units
600
V
62
41
A
20
ILM
Pulse Collector Current
Clamped Inductive Load Current
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
Diode Continous Forward Current
Maximum Repetitive Forward Current
IFRM
Max.
84
c
112
46.1
30
d
112
V GE
Gate-to-Emitter Voltage
±20
PD @ TC = 25°C
Maximum Power Dissipation
625
PD @ TC = 100°C
Maximum Power Dissipation
313
TJ
Operating Junction and
TST G
Storage Temperature Range
Soldering Temperature for 10 sec.
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
–––
–––
0.24
–––
–––
1.78
RθJC (Diode)
f
Junction-to-Case-(each Diode) f
RθCS
Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Junction-to-Ambient (typical socket mount)
–––
–––
40
–––
6.0 (0.21)
–––
Junction-to-Case-(each IGBT)
RθJC (IGBT)
Units
°C/W
g (oz)
*Qualification standards can be found at http://www.irf.com/
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AUIRGP/F65G40D0
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
600
—
—
V
—
0.18
—
V/°C
—
1.4
—
IC = 12A, VGE = 15V, TJ = 25°C
—
1.8
2.2
IC = 20A, VGE = 15V, TJ = 25°C
—
1.9
—
—
2.6
—
—
2.2
—
—
3.0
—
Gate Threshold Voltage
3.0
—
5.5
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-12
—
gfe
Forward Transconductance
—
36
—
S
VCE = 50V, I C = 20A
ICES
Collector-to-Emitter Leakage Current
—
3.2
25
µA
VGE = 0V, VCE = 600V
—
0.81
—
mA
VFM
Diode Forward Voltage Drop
—
1.7
2.45
V
IF = 20A
—
1.4
—
IGES
Gate-to-Emitter Leakage Current
—
—
±100
nA
VGE = ±20V
V(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆ TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VCE(on)
VGE(th)
Conditions
VGE = 0V, I C = 500µA
e
VGE = 0V, I C = 1.0mA (25°C-175°C)
IC = 12A, VGE = 15V, TJ = 150°C
V
IC = 20A, VGE = 15V, TJ = 150°C
IC = 12A, VGE = 15V, TJ = 175°C
IC = 20A, VGE = 15V, TJ = 175°C
V
VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 20A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Min.
Typ.
Max.
—
180
270
Qge
Gate-to-Emitter Charge (turn-on)
—
28
42
Qgc
Gate-to-Collector Charge (turn-on)
—
64
96
Eon
Turn-On Switching Loss
—
298
389
Eoff
Turn-Off Switching Loss
—
147
234
Etotal
Total Switching Loss
—
445
623
td(on)
Turn-On delay time
—
35
53
tr
Rise time
—
12
29
163
td(off)
Turn-Off delay time
—
142
tf
Fall time
—
15
32
Eon
Turn-On Switching Loss
—
630
—
Eoff
Turn-Off Switching Loss
—
137
—
Etotal
Total Switching Loss
—
767
—
td(on)
Turn-On delay time
—
33
—
tr
Rise time
—
12
—
Units
Conditions
IC = 20A
nC
VGE = 15V
VCC = 400V
IC = 20A, VCC = 400V, VGE = 15V
µJ
RG = 4.7Ω, L = 485µH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 400V, VGE = 15V
ns
RG = 4.7Ω, L = 485µH, TJ = 25°C
µJ
RG = 4.7Ω, L = 485µH, TJ = 175°C
IC = 20A, VCC = 400V, VGE=15V
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 400V, VGE = 15V
ns
RG = 4.7Ω, L = 485µH
td(off)
Turn-Off delay time
—
165
—
tf
Fall time
—
16
—
Cies
Input Capacitance
—
4673
—
Coes
Output Capacitance
—
337
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
58
—
f = 1.0Mhz
Effective Output Capacitance (Time Related)
—
406
—
VGE = 0V, VCE = 0V to 480V
—
162
—
Coes eff. (ER)
g
Effective Output Capacitance (Energy Related) g
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
trr
Diode Reverse Recovery Time
—
—
70
—
Qrr
Diode Reverse Recovery Charge
—
116
—
—
580
—
—
4.8
—
—
7.2
—
Coes eff.
TJ = 175°C
pF
VGE = 0V
TJ = 175°C, IC = 80A
VCC = 480V, Vp 600V
Rg = 4.7Ω, V GE = +20V to 0V
Peak Reverse Recovery Current
Irr
41
—
ns
TJ = 25°C
nC
TJ = 25°C
I F = 20A, VR = 200V,
TJ = 125°C di/dt = 200A/µs
I F = 20A, VR = 200V,
TJ = 125°C di/dt = 200A/µs
A
TJ = 25°C
I F = 20A, VR = 200V,
TJ = 125°C di/dt = 200A/µs
Notes through are on page 13
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AUIRGP/F65G40D0
100
For both:
Duty cycle : 50%
Tj = 175°C
Gate drive as specified
90
Load Current ( A )
80
Tc = 80°C
70
Square Wave:
60
VCC
50
Tc = 110°C
I
40
Diode as specified
30
1
10
100
f , Frequency ( kHz )
70
700
60
600
50
500
40
400
Ptot (W)
IC (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
30
300
20
200
10
100
0
0
25
50
75
100
125
150
175
25
T C (°C)
125
150
175
1000
OPERATION IN THIS AREA
LIMITED BY V CE (on)
100
1msec
100µsec
100
10
IC (A)
IC, Collector-to -Emitter Current (A)
100
Fig. 3 - Power Dissipation vs. Case
Temperature
10msec
1
10
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
0.01
1
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
75
T C (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
50
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10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
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AUIRGP/F65G40D0
100
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
80
60
ICE (A)
80
ICE (A)
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
VCE (V)
100
60
IC, Collector-to-Emitter Current (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
80
ICE (A)
10
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30µs
100
40
20
80
60
T J = 25°C
40
T J = 175°C
20
0
0
0
2
4
6
8
0
10
4
6
8
10
Fig. 9 - Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 30µs
10
10
8
8
VCE (V)
ICE = 10A
ICE = 20A
6
2
VGE, Gate-to-Emitter Voltage (V)
VCE (V)
VCE (V)
8
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
ICE = 40A
4
ICE = 10A
ICE = 20A
6
ICE = 40A
4
2
2
0
0
5
10
15
20
5
10
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
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15
20
VGE (V)
VGE (V)
4
6
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
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AUIRGP/F65G40D0
1600
100
1400
T J = 25°C
80
1200
T J =175°C
40
EON
1000
Energy (µJ)
IF (A)
60
800
600
EOFF
400
20
200
0
0
0.0
1.0
2.0
0
3.0
5
10
15
VF (V)
20
25
30
35
40
IC (A)
Fig. 12 - Typ. Diode Forward Characteristics
tp = 30µs
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 0.49mH; VCE = 400V, RG = 4.7Ω; VGE = 15V
1800
1000
1600
100
1400
1200
tF
Energy (µJ)
Swiching Time (ns)
tdOFF
tdON
EON
1000
800
EOFF
600
10
400
tR
200
0
1
0
10
20
30
40
0
50
20
40
IC (A)
100
120
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V
35
10000
30
tdOFF
25
1000
Eoes (µJ)
Swiching Time (ns)
80
RG (Ω)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 0.49mH; VCE = 400V, RG = 4.7Ω; VGE = 15V
tdON
tF
100
20
15
10
tR
5
0
10
0
20
40
60
80
100
120
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V
5
60
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0
100
200
300
400
500
600
700
Voltage (V)
Fig. 17- Typ. Output Capacitance
Stored Energy vs. VCE
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AUIRGP/F65G40D0
16
Capacitance (pF)
10000
VGE, Gate-to-Emitter Voltage (V)
100000
Cies
1000
Coes
100
Cres
14
V CES = 400V
12
10
8
6
4
2
0
10
0
100
200
300
400
0
500
50
100
150
200
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 18 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 19 - Typical Gate Charge vs. VGE
ICE = 20A; L = 200µH
50
45
IRR (A)
40
35
30
25
20
0
10
20
30
40
50
60
RG (Ω)
Fig. 20 - Typ. Diode IRR vs. RG
TJ = 175°C
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AUIRGP/F65G40D0
120
30
V = 200V
R
TJ = 25°C _____
TJ = 125°C ----------
100
25
20
IRRM (A)
80
trr (ns)
V = 200V
R
T = 25°C _____
J
TJ = 125°C ----------
60
40
IF = 40A
IF = 20A
15
IF = 10A
10
IF = 40A
IF = 20A
20
5
IF = 10A
0
0
100
1000
100
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 22 - Typical Recovery Current vs. dif/dt
Fig. 21 - Typical Reverse Recovery vs. dif/dt
2000
1600
1400
VR = 200V
T = 25°C _____
J
T = 125°C ---------J
V = 200V
R
TJ = 25°C _____
IF = 40A
IF = 20A
TJ = 125°C ----------
IF = 10A
1600
di(rec)M / dt (A/µs)
1200
Qrr (nC)
1000
800
600
1200
IF = 40A
IF = 20A
IF = 10A
800
400
400
200
0
0
100
1000
diF /dt (A/µs)
Fig. 23 - Typical Stored Charge vs. dif/dt
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100
1000
diF/dt (A/µs)
Fig. 24 - Typical di(rec)M/dt vs. dif/dt,
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AUIRGP/F65G40D0
Thermal Response ( Z thJC )
1
0.1
D = 0.50
0.20
0.10
R1
R1
0.05
0.01
τJ
0.02
0.01
0.001
τJ
τ1
1E-005
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τi (sec)
Ri (°C/W)
R4
R4
τ4
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
R2
R2
0.00604
0.000009
0.05590
0.000119
0.10879
0.003033
0.07706
0.018527
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
0.05
τJ
0.02
0.01
0.01
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
1E-005
0.0001
τ4
0.04565
0.000043
0.60669
0.000490
0.65528
0.004983
0.38139
0.041994
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
τ4
τi (sec)
Ri (°C/W)
R4
R4
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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AUIRGP/F65G40D0
L
L
DUT
0
80 V +
VCC
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC
ICM
VCC
DUT
Rg
Fig.C.T.5 - Resistive Load Circuit
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AUIRGP/F65G40D0
70
tf
70
T EST
CUR R E NT
tr
600
500
50
500
50
400
40
400
40
300
I C E (A)
60
V C E (V)
V C E (V)
600
700
30
90% ICE
200
5% V CE
10% ICE
100
0
300
20
200
10
100
10% test
current
20
-100
-0.2
-10
-0.1
0
0.1
0.2
0.3
10
5% V CE
0
Eon
Loss
Eoff
-100
-0.2
30
90% test
current
0
0
60
I CE (A)
700
-0.1
0
time(µs)
-10
0.1
0.2
0.3
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
3
trr
IF
tb
ta
0
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of t rr
Fig. WF3 - Reverse Recovery Waveform and
Definitions
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AUIRGP/F65G40D0
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUGP65G40D0
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRGP/F65G40D0
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Part Number
AUGF65G40D0
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRGP/F65G40D0
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s Industrial
and Consumer qualification level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
TO-247AC
N/A
TO-247AD
N/A
Machine Model
ESD
Class M4 (+/- 400V)††
AEC-Q101-002
Human Body Model
Charged Device
Model
Class C5 (+/- 1000V)††
AEC-Q101-005
Yes
RoHS Compliant
Class H3B (+/- 8000V)††
AEC-Q101-001
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Highest passing voltage.
Notes:
VCC = 80% (VCES), VGE = 20V, L = 485µH, RG = 4.7Ω, tested in production ILM ≤ 400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed
capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES .
Calculated continuous current based on maximum allowable junction temperature.
Nominal current limit is suggested for 400V, 200kHz operation. Actual current rating varies with application and is subjected to Tj and SOA
limits.
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AUIRGP/F65G40D0
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of
third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military
grade products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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© 2015 International Rectifier
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September 8, 2015
AUIRGP/F65G40D0
Revision History
Date
9/8/2015
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Comments
• Removed "short circuit rating on page 1 & 2.
© 2015 International Rectifier
Submit Datasheet Feedback
September 8, 2015
