AUIRGPS4070D0

  AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features            Low VCE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (on) Temperature Coefficient Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant Automotive Qualified * C VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C G VCE(on) typ. = 1.70V E n-channel   C Benefits      High Efficiency in a Wide Range of Applications Suitable for Applications in the Low to Mid-Range Frequencies Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Base Part Number   Package Type   AUIRGPS4070D0 PG-TO274-3-903 GC E PG-TO274-3-903 G Gate C Collector Standard Pack Form Quantity Tube E Emitter Orderable Part Number 25 AUIRGPS4070D0 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF NOMINAL IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Nominal Current  Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 240 160 120 360 480 120 480 ±20 ±30 750 375 Units V A V W -55 to +175   °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA Parameter Thermal Resistance Junction-to-Case (each IGBT)  Thermal Resistance Junction-to-Case (each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Typ. ––– ––– 0.24 ––– Max. 0.20 0.45 ––– 40 Units °C/W   * Qualification standards can be found at www.infineon.com  1 V 2.4 2018-12-03 AUIRGPS4070D0   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Parameter V(BR)CES 600 — Collector-to-Emitter Breakdown Voltage — 0.74 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.7 Collector-to-Emitter Saturation Voltage VCE(on) — 2.0 — 2.1 4.0 — Gate Threshold Voltage VGE(th) — -16 Threshold Voltage temp. coefficient VGE(th)/TJ gfe — 87 Forward Transconductance — 1.0 Collector-to-Emitter Leakage Current ICES — 2.0 — 1.8 VFM Diode Forward Voltage Drop — 1.9 — — Gate-to-Emitter Leakage Current IGES   Max. Units Conditions — V VGE = 0V, IC = 500µA — V/°C VGE = 0V, IC = 5mA (25°C-175°C) 2.0 IC = 120A, VGE = 15V, TJ = 25°C V — IC = 120A, VGE = 15V, TJ = 150°C — IC = 120A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 5.6mA — mV/°C VCE = VGE, IC = 5.6mA (25°C-175°C) — S VCE = 50V, IC = 120A 200 µA VGE = 0V, VCE = 600V — mA VGE = 0V, VCE = 600V,TJ = 175°C 2.1 IF = 120A V — IF = 120A, TJ = 175°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Qg Total Gate Charge (turn-on) — 250 375 Qge Gate-to-Emitter Charge (turn-on) — 65 98 Qgc Gate-to-Collector Charge (turn-on) — 100 150 Eon Turn-On Switching Loss — 5.7 6.7 Turn-Off Switching Loss — 4.2 5.2 Eoff Etotal Total Switching Loss — 9.9 11.9 td(on) Turn-On delay time — 40 60 Rise time — 125 155 tr td(off) Turn-Off delay time — 140 170 tf Fall time — 120 170 Eon Turn-On Switching Loss — 6.4 — Eoff Turn-Off Switching Loss — 4.7 — Etotal Total Switching Loss — 11.1 — td(on) Turn-On delay time — 40 — tr Rise time — 110 — td(off) Turn-Off delay time — 160 — tf Fall time — 125 — Cies Input Capacitance — 7600 — Coes Output Capacitance — 510 — Cres Reverse Transfer Capacitance — 230 — RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current   Units nC Conditions IC = 120A VGE = 15V VCC = 400V mJ ns IC = 120A, VCC = 400V, VGE = 15V RG = 4.7, L = 87µH, TJ = 25°C Energy losses include tail & diode reverse recovery mJ ns pF FULL SQUARE 6 — — µs — — — 1740 210 45 — — — µJ ns A IC = 120A, VCC = 400V, VGE = 15V RG = 4.7, L = 87µH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 480A VCC = 480V, Vp ≤ 600V Rg = 4.7, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V Rg = 5.0, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 120A VGE = 15V, Rg = 4.7, L = 87µH Notes: VCC = 80% (VCES), VGE = 20V, L = 3.5µH, RG = 47  tested in production ILM  400A.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  R is measured at TJ approximately 90°C.  Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur.  2 V 2.4 2018-12-03 AUIRGPS4070D0   800 250 700 200 600 500 IC (A) Ptot (W) 150 100 400 300 200 50 100 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 120 140 160 180 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 10µsec 100 100 IC (A) IC (A) 100µsec 1msec 10 DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 10 1000 100 VCE (V) VCE (V) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE = 20V Fig. 3 - Forward SOA TC = 25°C, TJ  175°C; VGE =15V 480 480 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 420 360 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 420 360 300 ICE (A) ICE (A) 300 240 240 180 180 120 120 60 60 0 0 0 2 4 6 8 10 V CE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs 3 1000 0 2 4 6 8 10 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs V 2.4 2018-12-03 AUIRGPS4070D0   480 360 300 420 -40°C 25°C 175°C 360 300 IF (A) ICE (A) 480 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 420 240 240 180 180 120 120 60 60 0 0 2 4 6 8 0 10 0.0 V CE (V) 10 10 8 8 ICE = 60A ICE = 120A ICE = 195A 4 4.0 5.0 ICE = 60A ICE = 120A 6 ICE = 195A 4 2 2 0 0 5 10 15 5 20 10 15 20 V GE (V) V GE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 10 480 8 ICE = 60A ICE = 120A 420 ICE = 195A 360 TJ = -40°C TJ = 25°C 300 TJ = 175°C 6 ICE (A) VCE (V) 3.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 20µs VCE (V) VCE (V) 2.0 V F (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 6 1.0 4 240 180 120 2 60 0 0 5 10 15 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 20 4 6 8 10 12 14 V GE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs V 2.4 2018-12-03 AUIRGPS4070D0   25 1000 Swiching Time (ns) Energy (mJ) 20 15 EON 10 EOFF 5 tdOFF tF 100 tR tdON 0 0 50 100 150 200 10 250 0 IC (A) 50 100 150 200 250 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 0.087mH; VCE = 400V, RG = 4.7; VGE = 15V 16 Fig. 14 - Typ. Switching Loss vs. IC TJ = 175°C; L = 0.087mH; VCE = 400V, RG = 4.7; VGE = 15V 10000 14 12 Swiching Time (ns) EON Energy (mJ) 10 8 EOFF 6 1000 tdOFF tF 100 tR 4 tdON 2 10 0 0 10 20 30 40 50 0 60 10 20 30 40 50 60 RG ( ) Rg ( ) Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 0.087mH; VCE = 400V, ICE = 120A; VGE = 15V TJ = 175°C; L = 0.087mH; VCE = 400V, ICE = 120A; VGE = 15V 45 45 RG = 4.7 35 40 RG =  IRR (A) IRR (A) 40 30 35 30 RG = 20 25 25 RG = 50 20 20 0 50 100 150 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 200 250 0 10 20 30 40 50 60 RG ( Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C V 2.4 2018-12-03 AUIRGPS4070D0   45 10000 9000 240A 40 35 QRR (nC) IRR (A) 8000 30 4.7 10 7000 20 120A 50 6000 5000 60A 25 4000 3000 20 200 400 600 300 800 400 500 diF /dt (A/µs) 700 800 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 120A; TJ = 175°C 24 3000 20 Time (µs) 2000 1200 1000 Isc 16 800 Tsc 12 600 1000 8 400 500 4 1500 50 100 150 200 11 12 13 14 15 16 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C VGE, Gate-to-Emitter Voltage (V) 16 Cies 10000 Capacitance (pF) 10 IF (A) 100000 1000 Coes 100 Cres 10 VCES = 400V VCES = 300V 12 8 4 0 0 100 200 300 400 500 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 200 9 250 Current (A) RG = 4.7 RG = 10 RG = 20 RG = 50 2500 Energy (µJ) 600 diF /dt (A/µs) 0 50 100 150 200 250 300 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 120A V 2.4 2018-12-03 AUIRGPS4070D0   Thermal Response ( ZthJC ) 1 D = 0.50 0.1 0.20 Ri (°C/W) 0.10 0.05 0.01 J 0.02 0.01 0.001 1E-005 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R1 R1 C I (sec) 0.00442 0.000014 0.04530 0.000165 0.08912 0.004938 0.06121 0.026150 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 Ri (°C/W) 0.05 0.01 0.02 0.01 J R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 1 2 2 3 3 4 4 Ci= iRi Ci= iRi 0.001 1E-005 0.00948 0.000013 0.12750 0.000134 0.18573 0.003167 0.12730 0.020010 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 C I (sec) 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 V 2.4 2018-12-03 AUIRGPS4070D0   L L VCC DUT 0 80 V + - 1K DUT VCC Rg Gate Charge Circuit RBSO A Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg RSH Switching Loss Fig.C.T.4 - Switching Loss Circuit Fig.C.T.3 - S.C. SOA Circuit R = VCC C force ICM 100K DUT VCC D1 22K C sense Rg G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit   8 V 2.4 AUIRGPS4070D0   180 600 tf 500 150 500 120 300 200 60 VCE (V) 90% ICE 120 90% ICE 300 200 30 10% VCE 0 0 60 100 0 -30 0 0.5 1 1.5 Eon Loss -100 -30 0 0.5 time(µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 140 500 QRR 100 400 80 tRR Vce (V) IF (A) 40 20 0 Peak IRR 0.10 0.60 1.10 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 VCE 1600 1200 ICE 200 800 100 400 0 -40 -60 -0.40 2000 300 60 -20 1.5 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 120 1 Ice (A) 0 30 10% VCE Eoff Loss -100 90 10%ICE 10% ICE 100 150 TEST CURRENT 400 90 ICE (A) VCE (V) 400 180 tr ICE (A) 600 0 -100 -4.00 0.00 4.00 8.00 -400 12.00 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 V 2.4 2018-12-03 AUIRGPS4070D0   Case Outline and Dimensions-PG-TO274-3-903 (Dimensions are shown in millimeters (inches)) PG-TO274-3-903 -Part Marking Information Part Number AUGPS4070D0 YWWA IR Logo XX  Date Code Y = Year WW = Work Week A = Automotive, Lead Free XX Lot Code 10 V 2.4 2018-12-03 AUIRGPS4070D0   Qualification Information Automotive (per AEC-Q101) This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level PG-TO274-3-903   Human Body Model   ESD   Charged Device Model   N/A   Class H3B(+/‐ 8000) AEC-Q101-001 Class C3 (+/‐ 2000)† AEC-Q101-005 Yes RoHS Compliant † † Highest passing voltage. Revision History Revision Date Subjects (major changes since last revision) 2.0 12/12/2016  Final Datasheet. 2.1 08/31/2017  Corrected typo error on part marking. 2.2 11/14/2017  Updated with IFX nomenclature. 2.3 07/19/2018  Updated with minor changes. 2.4 12/03/2018  Updated with package outline. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 V 2.4 2018-12-03