AUTOMOTIVE GRADE
AUIRLL024Z
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Package Type
AUIRLL024Z
SOT-223
55V
RDS(on) typ.
max.
ID
48m
60m
5.0A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
VDSS
S
D
G
SOT-223
AUIRLL024Z
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
2500
D
Drain
S
Source
Orderable Part Number
AUIRLL024ZTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.0
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation (PCB Mount)
4.0
40
2.8
PD @TA = 25°C
Maximum Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Thermal Resistance
Symbol
RJA
RJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Junction-to-Ambient (PCB Mount, steady state)
Units
A
1.0
0.02
± 16
21
38
See Fig. 12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
W
W/°C
V
mJ
A
mJ
°C
Max.
Units
45
120
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLL024Z
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
–––
48
60
VGS = 10V, ID = 3.0A
––– –––
80
mVGS = 5.0V, ID = 3.0A
––– ––– 100
VGS = 4.5V, ID = 3.0A
1.0
–––
3.0
V VDS = VGS, ID = 250µA
7.5
––– –––
S VDS = 25V, ID = 3.0A
––– –––
20
VDS = 55V, VGS = 0V
µA
––– ––– 250
VDS = 55V,VGS = 0V,TJ = 125°C
––– ––– 200
VGS = 16V
nA
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
1.5
4.0
8.6
33
20
15
380
66
36
220
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 3.0A
nC VDS = 44V
VGS = 5.0V
VDD = 28V
ID = 3.0A
ns
RG = 56
VGS = 5.0V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF V = 0V, V = 1.0V,ƒ = 1.0MHz
GS
DS
Coss
Output Capacitance
–––
53
–––
VGS = 0V, VDS = 44V,ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
93
–––
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
ton
Forward Turn-On Time
Min.
Typ. Max. Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 3.0A,VGS = 0V
ns TJ = 25°C ,IF = 3.0A, VDD = 28V
nC di/dt = 100A/µs
–––
–––
5.0
–––
–––
40
–––
–––
–––
–––
15
9.1
1.3
23
14
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, Starting TJ = 25°C, L = 4.8mH, RG = 25, IAS = 3.A. VGS = 10V.Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 4.8mH, RG = 25, IAS = 3.0A, VGS =10V.
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum recommended footprint.
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AUIRLL024Z
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
3.0V
1
10
BOTTOM
3.0V
1
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
1
0.1
10
0.1
100
10
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
100
10
Gfs, Forward Transconductance (S)
ID , Drain-to-Source Current )
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 150°C
10
T J = 25°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
0
2
4
6
8
10
T J = 25°C
8
T J = 150°C
6
4
2
V DS = 10V
300µs PULSE WIDTH
0
0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2
4
6
8
10
12
ID ,Drain-to-Source Current (A)
Fig. 4 Typical Forward Trans conductance
vs. Drain Current
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AUIRLL024Z
10000
6.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
ID = 3.0A
1000
Ciss
Coss
100
5.0
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
Crss
VDS = 44V
VDS = 28V
VDS = 11V
4.0
3.0
2.0
1.0
10
0.0
1
10
100
0
VDS , Drain-to-Source Voltage (V)
3
4
5
6
7
8
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
2
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
T J = 150°C
10
T J = 25°C
1
10
100µsec
1
0.1
0.01
DC
1msec
10msec
T A = 25°C
Tj = 150°C
Single Pulse
0.001
VGS = 0V
0.0001
0
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
1
3.0
0.1
1.0
10
100
1000.0
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRLL024Z
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
5
ID, Drain Current (A)
4
3
2
1
0
ID = 3.0A
VGS = 10V
1.5
1.0
0.5
25
50
75
100
125
-60 -40 -20
150
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
J
0.1
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
3
2
C
3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Ri (°C/W)
i (sec)
5.3396
0.000805
19.881
0.706300
19.771
20.80000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRLL024Z
15V
+
V
- DD
IAS
20V
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
100
DRIVER
L
VDS
ID
3.0A
0.80A
BOTTOM 0.69A
TOP
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Basic Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
2.5
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRLL024Z
Avalanche Current (A)
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
1
0.05
0.10
0.1
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
25
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 3.0A
20
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
15
10
5
0
25
50
75
100
125
Starting T J , Junction Temperature (°C)
150
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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AUIRLL024Z
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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AUIRLL024Z
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)
SOT-223(TO-261AA) Part Marking Information
LL024Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL024Z
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL024Z
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SOT-223
MSL1
Class M1B (+/- 100V)†
AEC-Q101-002
Class H0 (+/- 250V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/26/2014
10/29/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 9
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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