AUTOMOTIVE GRADE
AUIRLL2705
HEXFET® Power MOSFET
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
55V
RDS(on) max.
ID
0.04
3.8A
D
S
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
Package Type
AUIRLL2705
SOT-223
D
G
SOT-223
AUIRLL2705
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tape and Reel
2500
S
Source
Orderable Part Number
AUIRLL2705TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.2
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation (PCB Mount)
3.8
3.0
30
2.1
PD @TA = 25°C
Maximum Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJA
RJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Junction-to-Ambient (PCB Mount, steady state)
Units
A
1.0
8.3
± 16
110
3.8
0.10
7.5
-55 to + 150
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
Units
93
48
120
60
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLL2705
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.040
VGS = 10V, ID = 3.8A
––– ––– 0.051 VGS = 5.0V, ID = 3.8A
––– ––– 0.065
VGS = 4.0V, ID = 1.9A
1.0
–––
2.0
V VDS = VGS, ID = 250µA
5.1
––– –––
S VDS = 25V, ID = 1.9A
––– –––
25
VDS = 55V, VGS = 0V
µA
––– ––– 250
VDS = 44V,VGS = 0V,TJ = 150°C
––– ––– 100
VGS = 16V
nA
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
ton
Forward Turn-On Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
32
3.5
9.7
6.2
12
35
22
870
220
92
48
5.3
14
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
0.91
–––
–––
30
–––
–––
–––
–––
58
140
1.3
88
210
ID = 3.8A
nC VDS = 44V
VGS = 10V, See Fig 6 and 9
VDD = 28V
ID = 3.8A
ns
RG = 6.2
RD = 7.1See Fig. 10
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 3.8A,VGS = 0V
ns TJ = 25°C ,IF = 3.8A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD = 25V, Starting TJ = 25°C, L = 15mH, RG = 25, IAS = 3.8A. (See fig. 12)
ISD 3.8A, di/dt 220A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
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AUIRLL2705
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
100
0.1
1
V DS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = 25V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
Fig. 3 Typical Transfer Characteristics
I D = 3.8A
1.5
1.0
0.5
VGS = 10V
0.0
A
5.0
VGS , Gate-to-Source Voltage (V)
3
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
1
10
VDS , Drain-to-Source Voltage (V)
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
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AUIRLL2705
1400
V GS , Gate-to-Source Voltage (V)
1200
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = Cds + C gd
1000
800
Coss
600
400
Crss
200
0
1
10
100
I D = 3.8A
V DS = 44V
V DS = 28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
VDS , Drain-to-Source Voltage (V)
20
30
40
A
50
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
A
1.4
10
100µs
1ms
1
10ms
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRLL2705
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 9b. Gate Charge Test Circuit
Thermal Response (ZthJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
1
0.1
0.01
0.00001
0.02
0.01
PDM
t
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak TJ = PDM x Z thJA + T
A
0.0001
0.001
0.01
0.1
1
10
100
1000
A
10000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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15V
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
250
TOP
BOTTOM
200
ID
1.7A
3.0A
3.8A
150
100
50
0
VDD = 25V
25
50
75
100
125
A
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
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AUIRLL2705
Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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AUIRLL2705
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)
SOT-223(TO-261AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL2705
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL2705
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SOT-223
MSL1
Class M2 (+/- 200V)†
AEC-Q101-002
Class H1B (+/- 750V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/26/2014
10/29/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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