AUIRLR3705ZTR

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features ● ● ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D G S Description V(BR)DSS 55V RDS(on) max. 8.0mΩ ID (Silicon Limited) 89A ID (Package Limited) 42A D Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S G D-Pak AUIRLR3705Z G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) c h g d Units 89 63 42 360 130 0.88 ± 16 110 190 See Fig.12a, 12b, 15, 16 A W W/°C V mJ A mJ -55 to + 175 °C 300 Thermal Resistance RθJC RθJA RθJA j Parameter Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient i Typ. Max. Units ––– ––– ––– 1.14 40 110 °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 12/16/2010 AUIRLR3705Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– ––– ––– 1.0 89 ––– ––– ––– ––– ––– 0.053 6.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.0 11 12 3.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 42A VGS = 5.0V, ID = 34A VGS = 4.5V, ID = 21A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 42A µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 16V VGS = -16V e e e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 44 13 22 17 150 33 70 4.5 66 ––– ––– ––– ––– ––– ––– ––– nC ns nH Conditions ID = 42A VDS = 44V VGS = 5.0V VDD = 28V ID = 42A RG = 4.2 Ω VGS = 5.0V Between lead, e e D LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 2900 420 230 1550 320 500 ––– ––– ––– ––– ––– ––– S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V pF G f Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 42 ISM (Body Diode) Pulsed Source Current ––– ––– 360 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ––– ––– ––– ––– 21 14 1.3 42 28 c Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH RG = 25Ω, IAS = 42A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 42A, VGS = 0V TJ = 25°C, IF = 42A, VDD = 28V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population, starting TJ = 25°C, L = 0.12mH, RG = 25Ω, IAS = 42A, VGS =10V. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994. ˆ Rθ is measured at TJ approximately 90°C. www.irf.com AUIRLR3705Z Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK MSL1 Class M4 (425V) AEC-Q101-002 ESD Human Body Model Class H1C (2000V) AEC-Q101-001 Charged Device Model RoHS Compliant Class C5 (1125V) AEC-Q101-005 Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRLR3705Z 1000 100 BOTTOM TOP 10 2.8V ≤ 60µs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V TOP BOTTOM 2.8V 10 ≤ 60µs PULSE WIDTH Tj = 175°C 1 1 0.1 1 10 100 0.1 1 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics TJ = 175°C 100.0 10.0 VDS = 15V ≤ 60µs PULSE WIDTH Gfs, Forward Transconductance (S) 100 TJ = 25°C TJ = 25°C 80 60 TJ = 175°C 40 20 VDS = 8.0V 380µs PULSE WIDTH 1.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 VDS, Drain-to-Source Voltage (V) 1000.0 ID, Drain-to-Source Current(Α) 100 VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V 0 0 10 20 30 40 50 60 70 80 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com nce AUIRLR3705Z 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 3000 2000 1000 Coss VDS = 44V VDS= 28V VDS= 11V 10 8 6 4 2 Crss 0 0 1 ID= 42A 10 0 100 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 TJ = 175°C 10.0 TJ = 25°C 1.0 VGS = 0V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 80 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 100µsec 10 1msec 10msec 1 Tc = 25°C Tj = 175°C Single Pulse DC 0.1 0.1 0.4 60 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.2 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 20 2.0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRLR3705Z 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 ID = 42A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 0 TC , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 0.02 0.01 R1 R1 τJ τ1 R2 R2 τC τ2 τ1 τ2 τ Ri (°C/W) 0.6984 0.4415 τi (sec) 0.000465 0.004358 Ci= τi/Ri Ci i/Ri 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRLR3705Z DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) 15V tp 500 I D 5.3A 7.0A BOTTOM 42A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 2.5 Charge Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) VG ID = 250µA ID = 150µA ID = 50µA 2.0 1.5 1.0 0.5 L DUT 0 1K VCC 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRLR3705Z 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 0.10 10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 42A 100 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRLR3705Z D.U.T Driver Gate Drive ƒ + ‚ - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRLR3705Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AULR3705Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRLR3705Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. www.irf.com 11 AUIRLR3705Z Ordering Information Base part number Package Type AUIRLR3705Z Dpak 12 Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRLR3705Z AUIRLR3705ZTR AUIRLR3705ZTRL AUIRLR3705ZTRR www.irf.com AUIRLR3705Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13