AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Package Type
AUIRLS3034-7P
D2Pak 7 Pin
VDSS
40V
RDS(on) typ.
max.
1.0m
ID (Silicon Limited)
1.4m
380A
ID (Package Limited)
240A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
AUIRLS3034-7P
D2Pak 7 Pin
AUIRLS3034-7P
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS3034-7P
AUIRLS3034-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
380
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
270
240
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
1540
380
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient
Units
A
W
2.5
± 20
250
See Fig.14,15, 22a, 22b
W/°C
V
mJ
A
mJ
V/ns
1.3
-55 to + 175
300
°C
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLS3034-7P
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
40
––– –––
V VGS = 0V, ID = 250µA
––– 0.035 ––– V/°C Reference to 25°C, ID = 5mA
–––
1.0
1.4
VGS = 10V, ID = 200A
m
–––
1.2
1.7
VGS = 4.5V, ID = 180A
1.0
–––
2.5
V VDS = VGS, ID = 250µA
370
–––
–––
–––
–––
–––
–––
1.9
–––
–––
–––
–––
–––
–––
20
250
100
-100
S VDS = 10V, ID = 220A
VDS = 40V, VGS = 0V
µA
VDS = 40V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 120 180
–––
32
–––
–––
71
–––
–––
49
–––
–––
71
–––
––– 590 –––
–––
94
–––
––– 200 –––
––– 10990 –––
––– 2030 –––
Crss
Reverse Transfer Capacitance
–––
1100
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
2520
–––
VDD = 26V
ID = 220A
ns
RG= 2.7
VGS = 4.5V
VGS = 0V
VDS = 40V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
3060
–––
VGS = 0V, VDS = 0V to 32V
Min.
Typ. Max. Units
–––
––– 380
–––
–––
1540
–––
–––
–––
–––
–––
–––
–––
46
49
100
110
3.7
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 170A
VDS = 20V
nC
VGS = 4.5V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 200A,VGS = 0V
TJ = 25°C
VDD = 34V
ns
TJ = 125°C
IF = 220A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.010mH, RG = 25, IAS = 220A, VGS =10V. Part not recommended for use above this value.
ISD 220A, di/dt 1240A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
RJC value shown is at time zero
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AUIRLS3034-7P
10000
100000
ID, Drain-to-Source Current (A)
10000
BOTTOM
1000
60µs PULSE WIDTH
TOP
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100
BOTTOM
10
2.5V
2.5V
1
10
0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
2.0
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
Tj = 175°C
10
0.1
T J = 175°C
10
T J = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
1
2
3
4
ID = 200A
VGS = 10V
1.5
1.0
0.5
5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
5.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
ID = 170A
VGS, Gate-to-Source Voltage (V)
Crss = C gd
Coss = Cds + Cgd
C, Capacitance (pF)
60µs PULSE WIDTH
100
1
Ciss
10000
C oss
Crss
1000
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
VDS = 32V
VDS = 20V
4.0
3.0
2.0
1.0
0.0
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-4
AUIRLS3034-7P
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1000
100µsec
1msec
100
Limited by package
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3.5
1
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
400
Limited By Package
ID, Drain Current (A)
300
200
100
0
50
75
100
125
150
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
EAS , Single Pulse Avalanche Energy (mJ)
ID
47A
94A
BOTTOM 220A
TOP
1000
2.0
Energy (µJ)
Fig 10. Drain-to-Source Breakdown Voltage
1200
2.5
1.5
1.0
0.5
0.0
-5
0
5
800
600
400
200
0
10 15 20 25 30 35 40 45
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
100
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
25
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AUIRLS3034-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
J
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
4
C
4
Ci= iRi
Ci= iRi
1E-005
I (sec)
0.00741
0.000005
0.05041
0.000038
0.18384
0.001161
0.15864
0.008809
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 220A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRLS3034-7P
16
IF = 89A
V R = 34V
TJ = 25°C
14
2.5
12
2.0
1.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
TJ = 125°C
10
8
6
0.5
4
2
0.0
-75 -50 -25
0
0
25 50 75 100 125 150 175
100
200
400
500
600
700
diF /dt (A/µs)
T J , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
900
16
IF = 134A
V R = 34V
14
IF = 89A
VR = 34V
800
700
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
600
QRR (nC)
12
IRRM (A)
300
10
8
500
400
300
6
200
4
100
0
2
0
100
200
300
400
500
600
0
700
100 200 300 400 500 600 700 800
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
800
IF = 134A
VR = 34V
700
TJ = 25°C
TJ = 125°C
QRR (nC)
600
500
400
300
200
100
0
0
100 200 300 400 500 600 700 800
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRLS3034-7P
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-11-4
AUIRLS3034-7P
D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D2Pak - 7 Pin Part Marking Information
Part Number
AULS3034-7P
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-11-4
AUIRLS3034-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLS3034-7P
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
D2-Pak 7 Pin
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
4/2/2014
11/4/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
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