AUIRLR3114Z
AUIRLU3114Z
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
ID
40V
4.9m
6.5m
130A
42A
typ.
max.
(Silicon Limited)
(Package Limited)
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
Package Type
AUIRLU3114Z
I-Pak
AUIRLR3114Z
D-Pak
G
S
G
D-Pak
AUIRLR3114Z
G
Gate
I-Pak
AUIRLU3114Z
D
Drain
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
S
D
S
Source
Orderable Part Number
AUIRLU3114Z
AUIRLR3114Z
AUIRLR3114ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
130
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
89
42
500
140
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
RJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Units
A
W
0.95
± 16
130
260
See Fig.15,16, 12a, 12b
W/°C
V
mJ
A
mJ
-55 to + 175
300
°C
Typ.
Max.
Units
–––
–––
–––
1.05
50
110
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLR/U3114Z
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
40
––– –––
V VGS = 0V, ID = 250µA
––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
–––
3.9
4.9
VGS = 10V, ID = 42A
m
–––
5.2
6.5
VGS = 4.5V, ID = 42A
1.0
–––
2.5
V VDS = VGS, ID = 100µA
98
––– –––
S VDS = 10V, ID = 42A
––– –––
20
VDS = 40 V, VGS = 0V
µA
––– ––– 250
VDS = 40V,VGS = 0V,TJ =125°C
––– ––– 100
VGS = 16V
nA
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
40
12
18
25
140
33
50
56
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
3810
650
350
2390
580
820
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
42
–––
–––
500
–––
–––
–––
–––
30
27
1.3
45
41
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = 42A
nC VDS = 20V
VGS = 4.5V
VDD = 20V
ID = 42A
ns
RG = 3.7
VGS = 4.5V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 42A,VGS = 0V
ns TJ = 25°C ,IF = 42A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.15mH, RG = 25, IAS = 42A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994 .
R is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 42A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
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AUIRLR/U3114Z
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
100
10
1
2.5V
10
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
0.1
BOTTOM
1
1
10
0.1
100
10
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
1000
200
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
100
T J = 175°C
T J = 25°C
10
1
VDS = 15V
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
T J = 25°C
150
100
T J = 175°C
50
V DS = 10V
380µs PULSE WIDTH
0
0
20
40
60
80
100
ID ,Drain-to-Source Current (A)
Fig. 4 Typical Forward Trans conductance
Vs. Drain Current
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AUIRLR/U3114Z
100000
6.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
ID = 42A
C, Capacitance (pF)
Coss = Cds + Cgd
10000
Ciss
C oss
1000
5.0
VGS, Gate-to-Source Voltage (V)
Crss = C gd
Crss
VDS = 32V
VDS = 20V
VDS = 8.0V
4.0
3.0
2.0
1.0
0.0
100
1
10
0
100
10
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
40
50
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
DC
1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
20
QG, Total Gate Charge (nC)
3.0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-10-29
AUIRLR/U3114Z
2.0
ID, Drain Current (A)
120
R DS(on) , Drain-to-Source On Resistance
(Normalized)
140
Limited By Package
100
80
60
40
20
0
ID = 42A
VGS = 10V
1.5
1.0
0.5
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TC , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
C
1
2
2
3
3
Ci= iRi
Ci= iRi
1E-005
4
4
C
Ri (°C/W)
i (sec)
0.0350
0.000013
0.2433
0.000077
0.4851
0.001043
0.2867
0.004658
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRLR/U3114Z
15V
+
V
- DD
IAS
20V
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
600
DRIVER
L
VDS
ID
9.7A
17A
BOTTOM 42A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
3.0
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
VGS(th) , Gate threshold Voltage (V)
Id
2.5
2.0
1.5
1.0
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRLR/U3114Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
0.10
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
EAR , Avalanche Energy (mJ)
150
(For further info, see AN-1005 at www.infineon.com)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 42A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
100
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
50
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy
Vs. Temperature
7
EAS (AR) = PD (ave)·tav
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AUIRLR/U3114Z
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
8
Fig 18b. Switching Time Waveforms
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AUIRLR/U3114Z
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
Part Number
AULR3114Z
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLR/U3114Z
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AULU3114Z
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLR/U3114Z
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLR/U3114Z
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D-Pak
MSL1
I-Pak
Class M4 (+/- 425V)†
AEC-Q101-002
Class H1C (+/- 2000V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/29/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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