AUIRLZ44Z

PD - 97682 AUTOMOTIVE GRADE AUIRLZ44Z Features ● ● ● ● ● ● ● HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S V(BR)DSS 55V RDS(on) typ. 11mΩ max. 13.5mΩ ID 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G D S TO-220AB AUIRLZ44Z G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS(Thermally Limited) EAS (tested ) IAR EAR TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy c h g Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw Thermal Resistance W 0.53 ± 16 78 110 See Fig.12a, 12b, 15, 16 300 10 lbf in (1.1N m) y y 1.87 Case-to-Sink, Flat Greased Surface 0.50 ––– Junction-to-Ambient ––– 62 RθCS A mJ °C Max. i W/°C V mJ -55 to + 175 ––– Junction-to-Case RθJA A Typ. RθJC Parameter Units 51 36 204 80 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 06/10/11 AUIRLZ44Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– ––– ––– 1.0 27 ––– ––– ––– ––– ––– 0.05 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13.5 20 22.5 3.0 ––– 20 250 200 -200 V V/°C mΩ mΩ mΩ V V μA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A VGS = 5.0V, ID = 30A VGS = 4.5V, ID = 15A VDS = VGS, ID = 250μA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V e e e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. ––– ––– ––– ––– ––– ––– ––– ––– Typ. 24 7.5 12 14 160 25 42 4.5 Conditions Max. Units ID = 31A 36 ––– nC VDS = 44V VGS = 5.0V ––– ––– VDD = 50V ID = 31A ––– ––– ns RG = 7.5 Ω ––– VGS = 5.0V ––– Between lead, e e nH D LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 1620 230 130 860 180 280 ––– ––– ––– ––– ––– ––– S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V pF G f Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 51 ISM (Body Diode) Pulsed Source Current ––– ––– 204 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ––– ––– ––– ––– 21 16 1.3 32 24 c Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.166mH RG = 25Ω, IAS = 31A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/μs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population, starting TJ = 25°C, L = 0.166mH, RG = 25Ω, IAS = 31A, VGS =10V. ‡ Rθ is measured at TJ approximately 90°C. www.irf.com AUIRLZ44Z Qualification Information† Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant †† TO-220AB N/A ††† Class M4(+/- 425V ) (per AEC-Q101-002) ††† Class H1C(+/- 2000V ) (per AEC-Q101-001) ††† Class C5(+/- 1125V ) (per AEC-Q101-005) Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† ††† Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRLZ44Z 1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 3.0V 1 ≤ 60μs PULSE WIDTH Tj = 25°C TOP ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V TOP 100 BOTTOM 10 3.0V ≤ 60μs PULSE WIDTH Tj = 175°C 0.1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1000.0 60 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 25°C 100.0 T J = 175°C 10.0 VDS = 20V ≤ 60μs PULSE WIDTH T J = 175°C 40 T J = 25°C 20 VDS = 10V 380μs PULSE WIDTH 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 10.0 0 0 10 20 30 40 50 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com ance AUIRLZ44Z 2500 VGS, Gate-to-Source Voltage (V) C rss = C gd 2000 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd Ciss 1500 1000 500 Coss Crss VDS= 44V VDS= 28V VDS= 11V 10 8 6 4 2 0 0 1 ID= 31A 10 0 100 20 30 40 50 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.0 ISD, Reverse Drain Current (A) 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100.0 T J = 175°C 10.0 T J = 25°C 1.0 VGS = 0V 0.6 1.0 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 10msec 0.1 0.1 0.2 100μsec 10 1.8 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRLZ44Z 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 60 ID , Drain Current (A) 50 40 30 20 10 0 ID = 30A VGS = 5.0V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 T J , Junction Temperature (°C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 0.02 0.01 R1 R1 τJ τ1 R2 R2 τ2 τ1 τ2 Ci= τi/Ri Ci i/Ri 0.01 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.736 0.000345 0.687 0.449 0.00147 0.007058 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRLZ44Z 15V D.U.T RG + V - DD IAS VGS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) DRIVER L VDS 320 ID 3.7A 5.7A BOTTOM 31A TOP 240 160 80 0 tp 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 3.0 Charge Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) VG 2.5 ID = 250μA 2.0 1.5 1.0 L DUT 0 1K VCC 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRLZ44Z 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Δ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 31A 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRLZ44Z D.U.T Driver Gate Drive ƒ + - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ D= Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop InductorCurent Current Inductor Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs V DS VGS RD D.U.T. RG + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRLZ44Z TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRLZ44Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRLZ44Z Ordering Information Base part number Package Type Standard Pack AUIRLZ44Z TO-220 Form Tube www.irf.com Complete Part Number Quantity 50 AUIRLZ44Z 11 AUIRLZ44Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 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