BAR65...
Silicon PIN Diode
• Series diode for mobile communication in
low loss transmit-receiver switches
• Band switch for TV-tuners
• Very low forward resistance (typ. 0.65 Ω @ 5 mA)
• Low capacitance (typ. 0.5 pF @ 0V)
• Fast switching applications
• Pb-free (RoHS compliant) package
BAR65-02L
BAR65-02V
BAR65-03W
Type
BAR65-02L*
BAR65-02V
BAR65-03W
Package
TSLP-2-1
SC79
SOD323
Configuration
single, leadless
single
single
LS(nH)
0.4
0.6
1.8
Marking
NN
N
blue M
* Preliminary Data
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
30
V
Forward current
IF
100
mA
Total power dissipation
Ptot
Value
mW
BAR65-02L, TS ≤ 128°C
250
BAR65-02V, TS ≤ 118°C
250
BAR65-03W, TS ≤ 113°C
250
150
Junction temperature
Tj
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
1
Unit
°C
2011-06-14
BAR65...
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
K/W
BAR65-02L
≤ 90
BAR65-02V
≤ 130
BAR65-03W
≤ 145
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
20
nA
VF
-
0.93
1
V
DC Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
1For
calculation of RthJA please refer to Application Note Thermal Resistance
2
2011-06-14
BAR65...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Symbol
Parameter
Values
min.
typ.
Unit
max.
AC Characteristics
pF
CT
Diode capacitance
VR = 1 V, f = 1 MHz
-
0.45
0.9
VR = 3 V, f = 1 MHz
-
0.4
0.8
VR = 0 V, f = 100 MHz ... 1.8 GHz
-
0.5
kΩ
RP
Reverse parallel resistance
VR = 0 V, f = 100 MHz
-
700
-
VR = 0 V, f = 1 GHz
-
10
-
VR = 0 V, f = 1.8 GHz
-
5
Ω
rf
Forward resistance
IF = 1 mA, f = 100 MHz
-
1
-
IF = 5 mA, f = 100 MHz
-
0.65
0.95
IF = 10 mA, f = 100 MHz
-
0.56
0.9
τ rr
-
80
-
ns
I-region width
WI
-
3.5
-
µm
Insertion loss1)
IL
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
dB
IF = 1 mA, f = 1.8 GHz
-
0.08
-
IF = 5 mA, f = 1.8 GHz
-
0.06
-
IF = 10 mA, f = 1.8 GHz
-
0.05
-
VR = 0 V, f = 0.9 GHz
-
12
-
VR = 0 V, f = 1.8 GHz
-
7
-
VR = 0 V, f = 2.45 GHz
-
5
-
Isolation1)
1BAR65-02L
ISO
in series configuration, Z = 50Ω
3
2011-06-14
BAR65...
Diode capacitance CT = ƒ (VR)
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
f = Parameter
10 4
0.5
KOhm
100 MHz
F
10 3
1 MHz ... 1.8 GHz
Rp
CT
0.4
0.35
10 2
1 GHz
1.8 GHz
0.3
10 1
0.25
0.2
10 0
0.15
0.1
0
2
4
6
8
10
12
14
16
V
10 -1
0
20
2
4
6
8
10
12
14
16
VR
V
20
VR
Forward resistance rf = ƒ (IF)
Forward current IF = ƒ (VF)
f = 100MHz
TA = Parameter
10 1
10 0
A
10 -1
Ohm
rf
IF
10 -2
10 0
10 -3
-40 °C
25 °C
85 °C
125 °C
10 -4
10 -5
10 -1 -2
10
10
-1
10
0
10
1
mA 10
10 -6
0
2
IF
0.2
0.4
0.6
0.8
V
1.2
VF
4
2011-06-14
BAR65...
Forward current IF = ƒ (TS )
Forward current IF = ƒ (TS )
BAR65-02L
BAR65-02V
120
120
mA
100
100
90
90
80
80
IF
IF
mA
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
TS
15
30
45
60
75
90 105 120 °C
150
TS
Forward current IF = ƒ (TS )
BAR65-03W
120
mA
100
90
IF
80
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120 °C
150
TS
5
2011-06-14
BAR65...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR65-02L
IFmax / IFDC = ƒ (t p)
BAR65-02L
10
2
10 1
RthJS
IFmax/IFDC
K/W
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
10
0
tp
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR65-02V
IFmax / IFDC = ƒ (t p)
BAR65-02V
10 2
IFmax/IFDC
RthJS
10 3
10 2
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 1
10 0 -6
10
D=0
0,005
0,01
0,02
0,05
0,1
0,2
0,5
1
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
TS
10
-5
10
-4
10
-3
10
-2
s
TS
6
2011-06-14
BAR65...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR65-03W
IFmax / IFDC = ƒ (t p)
BAR65-03W
10 1
3
10
IFmax/IFDC
mA
IF
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
mA
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
°C
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
tp
°C
10
1
tp
Insertion loss IL = -|S21|2 = ƒ(f)
Isolation ISO = -|S21 |2 = ƒ(f)
IF = Parameter
VR = Parameter
BAR65-02L in series configuration, Z = 50Ω
BAR65-02L in series configuration Z = 50Ω
0
0
dB
dB
|S21|2
|S21|2
-0.1
-0.15
10 mA
5 mA
1 mA
0.1 mA
-0.2
-0.25
-10
-15
0V
1V
10 V
-20
-0.3
-25
-0.35
-0.4
0
0.5
1
1.5
2
GHz
-30
0
3
f
0.5
1
1.5
2
GHz
3
f
7
2011-06-14
Package SC79
8
BAR65...
2011-06-14
BAR65...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
9
2011-06-14
Package SOD323
10
BAR65...
2011-06-14
Package TSLP-2-1
11
BAR65...
2011-06-14
BAR65...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
12
2011-06-14