BAR9002ELSE6327XTSA1

BAR90... Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA) • Improved ON / OFF mode harmonic distortion balance • Pb-free (RoHS compliant) package BAR90-02EL BAR90-02ELS BAR90-098LRH 4 1 2 3 D2 D1 1 Type BAR90-02ELS BAR90-02EL BAR90-098LRH 2 Package TSSLP-2-3 TSLP-2-19 TSLP-4-7 Configuration single, leadless single, leadless anti-parallel pair, leadless LS(nH) 0.2 0.4 0.4 Marking J* X T9 * Marking of TSSLP-2-3 with underline Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 V Forward current IF 100 mA Total power dissipation Ptot Value mW TS ≤ 137 °C, BAR90-02ELS 150 TS ≤ 133°C, all others 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Unit °C 2013-06-10 BAR90... Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BAR90-02ELS ≤ 90 All others ≤ 65 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I(BR) = 5 µA Reverse current IR VR = 60 V Forward voltage V VF IF = 3 mA IF = 100 mA 0.75 0.81 0.87 - 0.9 1 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-06-10 BAR90... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.25 0.35 VR = 0 V, f = 100 MHz - 0.3 - VR = 0 V, f = 1 GHz - 0.19 - VR = 0 V, f = 1.8 GHz - 0.18 - Reverse parallel resistance kΩ RP VR = 0 V, f = 100 MHz - 35 - VR = 0 V, f = 1 GHz - 5 - VR = 0 V, f = 1.8 GHz - 4 - Forward resistance Ω rf IF = 1 mA, f = 100 MHz - 2 - IF = 3 mA, f = 100 MHz - 1.3 2.3 IF = 10 mA, f = 100 MHz - 0.8 - τ rr - 750 - ns I-region width WI - 20 - µm Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB IF = 1 mA, f = 1.8 GHz - 0.16 - IF = 3 mA, f = 1.8 GHz - 0.11 - IF = 10 mA, f = 1.8 GHz - 0.08 - VR = 0 V, f = 0.9 GHz - 18.5 - VR = 0 V, f = 1.8 GHz - 13.5 - VR = 0 V, f = 2.45 GHz - 11.5 - Isolation1) 1BAR90-02EL ISO in series configuration, Z = 50 Ω 3 2013-06-10 BAR90... Diode capacitance CT = ƒ (VR) Reverse parallel resistance RP = ƒ(VR) f = Parameter f = Parameter 10 4 0.5 KOhm pF 10 3 0.4 Rp CT 100 MHz 0.35 1 GHz 1 MHz 100 MHz 1 GHz 1.8 GHz 0.3 0.25 10 2 10 1 0.2 1.8 GHz 10 0 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = ƒ (IF) Forward current IF = ƒ (VF) f = 100 MHz TA = Parameter 10 1 10 -1 A 10 -2 rf IF Ohm 10 -3 10 0 10 -4 -40°C +25 °C +85 °C +125 °C 10 -5 10 -1 -1 10 10 0 10 1 mA 10 10 -6 0.2 2 IF 0.4 0.6 0.8 V 1.2 VF 4 2013-06-10 BAR90... Forward current IF = ƒ (TS ) Forward current IF = ƒ (TS ) BAR90-02EL / -098LRH BAR90-02ELS 120 120 mA 100 100 90 90 80 80 IF IF mA 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR90-02EL / -098LRH IFmax/ IFDC =ƒ (tp) BAR90-02EL /-098LRH 10 2 10 2 10 IFmax/IFDC RthJS mA 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -1 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 mA D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 °C 10 10 0 -7 10 1 tp 10 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp 5 2013-06-10 BAR90... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR90-02ELS IFmax/ IFDC = ƒ (t p) BAR90-02ELS IFmax/IFDC 10 RthJS 10 2 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 - 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -2 s 10 10 0 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 0 tp Insertion loss IL = -|S21|2 = ƒ(f) Isolation ISO = -|S21 |2 = ƒ(f) IF = Parameter VR = Parameter BAR90-02EL in series configuration, Z = 50Ω BAR90-02EL in series configuration, Z = 50Ω 0 0 dB dB |S21|² |S21|² -0.1 -0.15 -0.2 -0.25 -0.3 -10 -15 10mA 3mA 1mA 0.5mA -20 0V 1V 10 V -25 -0.35 -0.4 0 1 2 3 4 GHz -30 0 6 f 1 2 3 4 GHz 6 f 6 2013-06-10 Package TSLP-2-19 7 BAR90... 2013-06-10 Package TSLP-4-7 BAR90... Package Outline Bottom view 0.8 ±0.05 4 x 0.25 ±0.035 1) 0.75 ±0.05 0.05 MAX. 3 2 4 1 2 3 1 1.2 ±0.05 0.39 +0.01 -0.03 4 x 0.35 ±0.035 1) Top view 4 0.45 ±0.05 Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.8 0.4 0.38 0.42 1.18 0.4 1.2 0.4 0.38 0.78 0.28 0.3 0.28 0.3 0.22 0.2 Copper Stencil apertures Solder mask Marking Layout (Example) BAR90-07LRH Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 1.45 8 4 Pin 1 marking 1.05 8 2013-06-10 Package TSSLP-2-3 9 BAR90... 2013-06-10 BAR90... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2013-06-10