BAR95-02LSE6327

BAR95... Silicon PIN Diode • Designed for antenna switch modules (ASM) in battery-powered mobile systems • Low capacitance at zero volts reverse bias at frequencies above 1 GHz (typ. 0.24 pF) • Low forward resistance (typ. 1.2 Ω @ IF = 5 mA) • Fast switching BAR95-02LS 1 2 Type BAR95-02LS Package TSSLP-2-1 Configuration single, leadless LS(nH) Marking 0.2 C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation Ptot 150 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Value Unit TS ≤ 136 °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For Value Unit ≤ 95 K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 2006-02-03 BAR95... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 50 - - V - - 10 nA DC Characteristics Breakdown voltage V(BR) I (BR) = 5 µA Reverse current IR VR = 35 V Forward voltage V VF I F = 10 mA - - 0.9 I F = 100 mA - - 1.2 2 2006-02-03 BAR95... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.25 0.35 VR = 0 V, f = 100 MHz - 0.3 - VR = 0 V, f = 1 GHz - 0.24 - VR = 0 V, f = 1.8 GHz - 0.23 - Reverse parallel resistance RP kΩ VR = 0 V, f = 100 MHz - 30 - VR = 0 V, f = 1 GHz - 5 - VR = 0 V, f = 1.8 GHz - 3 - Forward resistance rf Ω IF = 1 mA, f = 100 MHz - 3.5 - IF = 5 mA, f = 100 MHz - 1.2 - IF = 10 mA, f = 100 MHz - 0.8 1.5 τ rr - 500 - ns I-region width WI - 19 - µm Insertion loss1) |S21|2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB IF = 1 mA, f = 1.8 GHz - -0.3 - IF = 5 mA , f = 1.8 GHz - -0.1 - IF = 10 mA, f = 1.8 GHz - -0.08 - VR = 0 V, f = 0.9 GHz - -17 - VR = 0 V, f = 1.8 GHz - -12 - VR = 0 V, f = 2.45 GHz - -10 - Isolation1) 1BAR95-02LS |S21|2 in series configuration, Z = 50 Ω 3 2006-02-03 BAR95... Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 3 0.5 pF kOhm 10 2 1 MHz 100 MHz 1 GHz 1.8 GHz 0.35 Rp CT 0.4 0.3 0.25 10 1 100 MHz 1 GHz 1.8 GHz 0.2 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 0 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = ƒ (IF ) f = Parameter Forward current IF = ƒ (VF) TA = 25 °C 10 2 10A-1 10 -2 Ohm 100 MHz 1 GHz 10 -3 rf IF 10 1 10 -4 10 -5 10 10 -6 0 10 -7 10 -8 10 -1 -1 10 10 0 10 1 mA 10 10 -9 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2006-02-03 BAR95... Forward current IF = ƒ (T S) Permissible Puls Load R thJS = ƒ (tp) 10 2 120 mA 100 RthJS 90 IF 80 70 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 60 50 10 0 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load IFmax / I FDC = ƒ (tp ) IFmax/IFDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2006-02-03 Package TSSLP-2-1 BAR95... Package Outline Top view Bottom view 0.31 +0.01 -0.02 1 0.62 ±0.035 2 2 1 0.2 ±0.025 1) 0.355 ±0.025 0.32 ±0.035 0.26 ±0.025 1) Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures Marking Layout Type code Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.35 0.73 Cathode marking 8 4 0.43 6 2006-02-03 BAR95... Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any ty stated herein and/or any information regarding the application of the device, Infineon Technologies he disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your ne Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on th question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the expr approval of Infineon Technologies, if a failure of such components can reasonably be expected to cau of that life-support device or system, or to affect the safety or effectiveness of that device or system. L devices or systems are intended to be implanted in the human body, or to support and/or maintain and and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other pe be endangered. 7 2006-02-03