BAS7006B5003

BAS70...B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance (see attached Forward current curves) • High volume packing size: B5000: 9 x 10kreels, B5003: 10 x 3k reels • Not for automotive applications* BAS70 BAS70-04 3 1 BAS70-05 3 2 Type BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-06 3 D 1 D 2 D 1 1 2 1 Package SOT23 SOT23 SOT23 SOT23 3 D 2 2 Configuration single series common cathode common anode D 1 D 2 1 2 LS(nH) 1.8 1.8 1.8 1.8 Marking 73s 74s 75s 76s * Automotive qualification ongoing 1 2006-08-04 BAS70...B5000 / B5003 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 70 V Forward current IF 70 mA Non-repetitive peak surge forward current IFSM 100 Total power dissipation Ptot Value Unit mW BAS70, T S ≤ 109 °C 250 BAS70-04, BAS70-06, TS ≤ 101 °C BAS70-05, TS ≤ 95 °C 250 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 °C Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit K/W BAS70 ≤ 165 BAS70-04, BAS70-06 ≤ 195 BAS70-05 ≤ 220 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 70 - - V - - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 720 880 1000 - - 20 ∆ VF Forward voltage matching2) IF = 10 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2∆V F is the difference between lowest and highest VF in a multiple diode component. 2 2006-08-04 BAS70...B5000 / B5003 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. CT - 1.5 2 pF rf - 34 - Ω τ rr - - 100 ps AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time IF = 25 mA 3 2006-08-04 BAS70...B5000 / B5003 Diode capacitance CT = ƒ (VR) Forward resistance rf = ƒ (I F) f = 1MHz f = 1MHz BAS 70W/BAS 170W 2.0 CT EHB00044 BAS 70W/BAS 170W 10 3 pF rf EHB00045 Ω 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 10 0 0.1 80 1 10 mA 100 ΙF VR Reverse current IR = ƒ(VR) Forward current IF = ƒ (VF) TA = Parameter 10 2 ΙR BAS 70W/BAS 170W EHB00043 µA 10 2 ΙF TA = 150 C 10 1 BAS 70W/BAS 170W EHB00042 mA 10 1 85 C 10 0 10 0 TA = -40 C 25 C 85 C 150 C 10 -1 10 -3 10 -1 25 C 10 -2 0 20 40 60 V 10 -2 80 VR 0.0 0.5 1.0 V 1.5 VF 4 2006-08-04 BAS70...B5000 / B5003 Forward current IF = ƒ (T S) Forward current IF = ƒ (T S) BAS70B500x BAS70-04/-06B500x BAS70Exxx (e.g. E6327) BAS70-04/-06Exxx (e.g. E6327) 80 80 mA 60 60 50 50 IF IF mA BAS70B500x BAS70Exxxx 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 BAS70-04/-06B500x BAS70-04/-06Exxxx 90 105 120 °C 0 0 150 TS 15 30 45 60 75 90 105 120 °C 150 TS Forward current IF = ƒ (T S) BAS70-05B500x BAS70-05Exxx (e.g. E6327) 80 mA IF 60 50 BAS70-05B500x BAS70-05Exxxx 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS 5 2006-08-04 Package SOT23 BAS70...B5000 / B5003 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2006-08-04 BAS70...B5000 / B5003 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2006-08-04