BAT15-099R

BAT15-099R Cross-over ring silicon RF Schottky diodes Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz. Feature list • • • • Low inductance LS = 2 nH (typical) Low capacitance C = 0.29 pF (typical) Industry standard SOT143 (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers in: • Satellite systems • Low noise blocks for Ku bands • Security systems Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT15-099R / BAT15099RE6327HTSA1 SOT143 Cross-over ring S6s 3k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 2.1 2.2 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Package information SOT143 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Unit Note or test condition Max. Diode reverse voltage VR – 4 V Forward current IF – 110 mA Total power dissipation PTOT – 100 mW Junction temperature TJ – 150 °C Operating temperature TOP -55 150 Storage temperature TSTG -55 150 TS ≤ 67 °C 1) Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 TS is the soldering point temperature. Datasheet 2 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Electrical performance in test fixture 2 Electrical performance in test fixture 2.1 Electrical characteristics Table 3 Electrical characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Breakdown voltage VBR 4 – – V IR = 100 μA Reverse current IR – – 5 μA VR = 1 V Forward voltage VF 0.16 0.25 0.32 V IF = 1 mA 0.25 0.35 0.41 IF = 10 mA Forward voltage matching ΔVF – – 20 mV IF = 10 mA 1) Differential forward resistance RF – 5.8 – Ω IF = 10 mA / 50 mA 2) Capacitance C – 0.29 0.5 pF VR = 0 V, f = 1 MHz Inductance LS – 2 – nH 1 2 ΔVF is the difference between lowest and highest VF in a multiple diode component. RF = Datasheet V F 50 mA − V F 10 mA 50 mA − 10 mA 3 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Electrical performance in test fixture 2.2 Characteristic curves At TA = 25 °C, unless otherwise specified 0.34 0.32 C [pF] 0.3 0.28 0.26 0.24 0.22 0 0.5 1 1.5 2 2.5 3 3.5 4 V R [V] Figure 1 Diode capacitance C vs. reverse voltage VR at frequency f = 1 MHz 10 3 10 2 IF [mA] 10 1 10 0 10 -1 10 -2 10 -3 0 0.2 0.4 0.6 0.8 1 VF [V] Figure 2 Datasheet Forward current IF vs. forward voltage VF 4 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Electrical performance in test fixture I R [µA] 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 3 3.5 4 V R [V] Figure 3 Note: Datasheet Reverse current IR vs. reverse voltage VR The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. 5 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Thermal characteristics 3 Thermal characteristics Table 4 Thermal resistance Parameter Sym bol Thermal resistance (junction - soldering point) RthJS Values Min. Typ. Max. – 830 – Unit Note or test condition K/W TS = 67 °C 1) 120 100 I F [mA] 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T S [°C] Figure 4 1 Permissible forward current IF in DC operation For RthJS in other conditions refer to the curves in this chapter. Datasheet 6 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Thermal characteristics Figure 5 Thermal resistance RthJS in pulse operation Figure 6 Permissible forward current ratio IFmax/IDC in pulse operation Datasheet 7 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Package information SOT143 4 Package information SOT143 0°...8° 2.9±0.1 0.1 MAX. B 0.08...0. 1 2 1.3±0.1 3 2.4±0.15 4 15 0.15 MIN. 1.9 A 1.7 0.2 1±0.1 A +0.10 0.2 0.4-0.05 0.25 B 3x +0.10 0.8-0.05 0.25 B MOLD FLASH, PROTUSIONS OR GATE BURRS OF 0.2MM MAXIMUM PER SIDE ARE NOT INCLUDED ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ] Figure 7 Package outline 0.6 0.6 1.9 0.7 0.7 1.1 1.1 1.1 1.1 0.7 0.7 1.9 1.7 1.7 1 1 coppe r s olde r ma s k s te ncil a pe rture s ALL DIMENS IONS ARE IN UNITS MM Figure 8 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 9 Marking layout example 3.15 0.2 4 8 2.6 P IN 1 INDEX MARKING 4 1.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 10 Datasheet ] Tape dimensions 8 v1.0 2018-06-30 BAT15-099R Cross-over ring silicon RF Schottky diodes Revision history Revision history Document version Date of release Description of changes 1.0 2018-09-07 • • • • • Datasheet Change from series datasheet to individual one Initial release of datasheet Typical values and curves updated to the values of the production (No product or process change behind) Typical values added Typical curves removed 9 v1.0 2018-06-30 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-06-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-vsd1515576924370 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury