BAT1504RE6152HTSA1

BAT15-04R Reverse series silicon RF Schottky diode pair Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Feature list • • • • Low inductance LS = 1.5 nH (typical) Low capacitance C = 0.27 pF (typical) at 1 MHz Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: • Satellite systems • Low noise blocks for Ku bands • Security systems Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT15-04R / BAT1504RE6152HTSA1 SOT23-3 Reverse series pair 4R 3k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 2.1 2.2 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Package information SOT23-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Unit Note or test condition Max. Diode reverse voltage VR – 4 V Forward current IF – 110 mA Total power dissipation PTOT – 100 mW Junction temperature TJ – 150 °C Operating temperature TOP -55 150 Storage temperature TSTG -55 150 TS ≤ 77 °C 1) Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 TS is the soldering point temperature. Datasheet 2 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Electrical performance in test fixture 2 Electrical performance in test fixture 2.1 Electrical characteristics Table 3 Electrical characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Breakdown voltage VBR 4 – – V IR = 10 μA Forward voltage VF 0.2 0.25 0.3 V IF = 1 mA – 0.35 0.41 IF = 10 mA Forward voltage matching ΔVF – – 10 mV IF = 1 mA 2) Differential forward resistance RF – 8 – Ω IF = 10 mA / 50 mA 3) – 12 18 Ω IF = 5 mA VR = 0 V, f = 1 MHz Capacitance C – 0.26 0.3 pF Inductance LS – 1.5 – nH 2 3 ΔVF is the difference between lowest and highest VF in a multiple diode component. RF = Datasheet V F 50 mA − V F 10 mA 50 mA − 10 mA 3 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Electrical performance in test fixture 2.2 Characteristic curves At TA = 25 °C, unless otherwise specified 0.3 0.28 C [pF] 0.26 0.24 0.22 0.2 0.18 0 0.5 1 1.5 2 2.5 3 3.5 4 V R [V] Figure 1 Diode capacitance C vs. reverse voltage VR at frequency f = 1 MHz 103 102 I F [mA] 101 100 10-1 10-2 10-3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V F [V] Figure 2 Datasheet Forward current IF vs. forward voltage VF 4 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Electrical performance in test fixture IR [µA] 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 3 3.5 4 VR [V] Figure 3 Note: Datasheet Reverse current IR vs. reverse voltage VR The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. 5 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Thermal characteristics 3 Thermal characteristics Table 4 Thermal resistance Parameter Sym bol Thermal resistance (junction - soldering point) RthJS Values Min. Typ. Max. – 725 – Unit Note or test condition K/W TS = 77 °C 4) 120 100 I F [mA] 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T S [°C] Figure 4 4 Permissible forward current IF in DC operation For RthJS in other conditions refer to the curves in this chapter. Datasheet 6 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Thermal characteristics Figure 5 Thermal resistance RthJS in pulse operation Figure 6 Permissible forward current ratio IFmax/IDC in pulse operation Datasheet 7 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Package information SOT23-3 4 Package information SOT23-3 Figure 7 Package outline Figure 8 Foot print Figure 9 Marking layout example Figure 10 Tape dimensions Datasheet 8 v2.01 2020-07-08 BAT15-04R Reverse series silicon RF Schottky diode pair Revision history Revision history Document version Date of release Description of changes 2.00 2018-09-28 • • 2.01 Datasheet 2020-07-09 • New layout of datasheet Typical values and curves updated to the values of the production (No product or process change behind) Maximum/typical values added • Scale of typical IF(VF) curve corrected 9 v2.01 2020-07-08 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2020-07-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2020 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-buq1515511110421 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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