BAT17-04W
Series silicon RF Schottky diode pair
Product description
These Infineon RF Schottky diodes are silicon low barrier N-type
devices with an integrated guard ring on-chip for overvoltage
protection. Their low barrier height, small forward voltage and
low junction capacitance, make BAT17-04W a suitable choice for
mixer and detector applications at frequencies as high as 6 GHz.
Feature list
•
•
•
•
Low inductance Ls = 1.4 nH (typical)
Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz
Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
Pb-free, RoHS compliant and halogen free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
For mixers and detectors in:
•
Wearables
•
Smart metering
•
Telematic systems
•
Set top boxes
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BAT17-04W / BAT1704WH6327XTSA1
SOT323-3
Series pair
54s
3k
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions!
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
2.1
2.2
Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Package information SOT323-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Unit
Note or test condition
Max.
Diode reverse voltage
VR
–
4
V
Forward current
IF
–
130
mA
Total power dissipation
PTOT
–
150
mW
Junction temperature
TJ
–
150
°C
Operating temperature
TOP
-55
125
Storage temperature
TSTG
-55
150
TS ≤ 100 °C 1)
Attention: Stresses above the maximum values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the component.
1
TS is the soldering point temperature.
Datasheet
2
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Electrical performance in test fixture
2
Electrical performance in test fixture
2.1
Electrical characteristics
Table 3
Electrical characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Breakdown voltage
VBR
4
–
–
V
IR = 10 μA
Reverse current
IR
–
–
0.25
μA
VR = 3 V
–
–
1.25
VR = 3 V, TA = 60 °C 1)
–
–
10
VR = 4 V
0.2
0.27
0.35
0.25
0.34
0.45
IF = 1 mA
0.35
0.42
0.60
IF = 10 mA
Forward voltage
VF
V
IF = 0.1 mA
Forward voltage matching
Δ VF
–
–
20
mV
IF = 1 mA 2)
Differential forward resistance
RF
–
8
15
Ω
IF = 5 mA
Capacitance
C
0.4
0.61
0.7
pF
VR = 0 V, f = 1 MHz
Inductance
LS
–
1.4
–
nH
1
2
Parameter is not subject to production test, min/max values are specified by design.
ΔVF is the difference between lowest and highest VF in a multiple diode component.
Datasheet
3
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Electrical performance in test fixture
2.2
Characteristic curves
At TA = 25 °C, unless otherwise specified
0.7
0.65
0.6
C [pF]
0.55
0.5
0.45
0.4
0.35
0.3
0
0.5
1
1.5
2
2.5
3
3.5
4
V R [V]
Figure 1
Capacitance C vs. reverse voltage VR at frequency f = 1 MHz
10 2
I F [mA]
10 1
10 0
10 -1
10 -2
10 -3
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V F [V]
Figure 2
Datasheet
Forward current IF vs. forward voltage VF
4
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Electrical performance in test fixture
I R [nA]
10 2
10 1
10 0
0
0.5
1
1.5
2
2.5
3
3.5
4
V R [V]
Figure 3
Note:
Datasheet
Reverse current IR vs. reverse voltage VR
The curves shown in this chapter have been generated using typical devices but shall not be
understood as a guarantee that all devices have identical characteristic curves.
5
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Thermal characteristics
3
Thermal characteristics
Table 4
Thermal resistance
Parameter
Sym
bol
Thermal resistance
(junction - soldering point)
RthJS
Values
Min.
Typ.
Max.
–
330
–
Unit
Note or test condition
K/W
TS = 100 °C 1)
140
120
I F [mA]
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
T S [°C]
Figure 4
1
Permissible forward current IF in DC operation
For RthJS in other conditions refer to the curves in this chapter.
Datasheet
6
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Thermal characteristics
Figure 5
Thermal resistance RthJS in pulse operation
Figure 6
Permissible forward current ratio IFmax/IDC in pulse operation
Datasheet
7
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Package information SOT323-3
Package information SOT323-3
A
0.15 -0.05
+0.10
1.25 ±0.1
0.9 ±0.1
4
0.1 MAX.
0.1
0.1 MIN.
2.1 ±0.1
A
+0.10
0.3 -0.05
3
0.65 0.65
2
2 ±0.2
1
0.1
3x
0.2
MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
]
Figure 7
Package outline
Figure 8
Foot print
TYP E CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Figure 9
Marking layout example
4
0.2
P IN 1
INDEX MARKING
2.3
1.9
8
2
2.15
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
Figure 10
Datasheet
1.1
]
Tape information
8
2018-06-30
BAT17-04W
Series silicon RF Schottky diode pair
Revision history
Revision history
Document
version
Date of
release
Description of changes
1.0
2018-09-07
•
•
•
•
•
Datasheet
Change from series datasheet to individual one
Initial release of datasheet
Typical values and curves updated to the values of the production
(No product or process change behind)
Maximum values tightened (No product or process change behind)
Typical curves removed
9
2018-06-30
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-06-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-say1531919707504
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury
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