BAT2402LSE6327XTSA1

BAT24-02LS Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz. Feature list • • • • Low inductance LS = 0.2 nH (typical) Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: • Radar systems and modules Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT24-02LS / BAT2402LSE6327XTSA1 TSSLP-2-1 Single, leadless S 15 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 2.1 2.2 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Package information TSSLP-2-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA= 25°C, unless otherwise specified Parameter Symbol Values Min. Unit Note or test condition Max. Diode reverse voltage VR – 4 V Forward current IF – 110 mA Total power dissipation PTOT – 100 mW Junction temperature TJ – 150 °C Operating temperature TOP – 150 Storage temperature TSTG – 150 TS ≤ 82°C 1) Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 TS is the soldering point temperature. Datasheet 2 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Electrical performance in test fixture 2 Electrical performance in test fixture 2.1 Electrical characteristics Table 3 Electrical characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Breakdown voltage VBR 4 – – V IR = 10 μA Reverse current IR – – 5 μA VR = 1 V Forward voltage VR 0.16 0.25 0.32 V IF = 1 mA 0.25 0.35 0.41 IF = 10 mA Differential forward resistance RF – 8 10 Ω IF = 10 mA / 50 mA 1) Capacitance C – 0.2 0.23 pF VR = 0 V, f = 1 MHz Inductance LS 0.15 0.2 0.25 nH 2) 2 2.5 3 2.2 Characteristic curves At TA = 25 °C, unless otherwise specified 0.24 0.22 C [pF] 0.2 0.18 0.16 0.14 0.12 0 0.5 1 1.5 3.5 4 V R [V] Figure 1 1 2 RF = Capacitance C vs. reverse voltage VR at frequency f = 1 MHz V F 50 mA − V F 10 mA 50 mA − 10 mA Parameter is not subject to production test, min/max values are specified by design. Datasheet 3 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Electrical performance in test fixture 0.24 0.22 C [pF] 0.2 0.18 0.16 0.14 0.12 -50 -25 0 25 50 75 100 TA [°C] Figure 2 Capacitance C vs. ambient temperature TA at frequency f = 1 MHz and reverse voltage VR = 0 V 10 3 10 2 IF [mA] 10 1 10 0 10 -1 10 -2 10 -3 0 0.2 0.4 0.6 0.8 1 1.2 VF [V] Figure 3 Datasheet Forward current IF vs. forward voltage VF 4 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Electrical performance in test fixture 0.45 0.4 10 mA VF [V] 0.35 0.3 1 mA 0.25 0.2 100 µA 0.15 0.1 -50 -25 0 25 50 75 100 TA [°C] Figure 4 Forward voltage VF vs. ambient temperature TA at different forward currents Figure 5 Differential forward resistance RF vs. ambient temperature TA between forward currents IF = 10 mA and 50 mA Datasheet 5 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Electrical performance in test fixture I R [µA] 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 3 3.5 4 V R [V] Figure 6 Reverse current IR vs. reverse voltage VR 10 2 10 1 IR [µA] 10 0 10 -1 10 -2 10 -3 -50 -25 0 25 50 75 100 TA [°C] Figure 7 Note: Datasheet Reverse current IR vs. ambient temperature TA at reverse voltage VR = 1 V The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. 6 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Package information TSSLP-2-1 3 Package information TSSLP-2-1 Figure 8 Package outline Figure 9 Foot print Figure 10 Marking layout example 4 0.35 2 0.73 8 PIN 1 INDEX MARKING 0.43 ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ Figure 11 Note: Datasheet ] Tape information See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. 7 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Thermal characteristics 4 Thermal characteristics Table 4 Thermal resistance Parameter Sym bol Thermal resistance (junction - soldering point) RthJS Values Min. Typ. Max. – 675 – Unit Note or test condition K/W TS = 82 °C 1) 120 100 I F [mA] 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T S [°C] Figure 12 1 Permissible forward current IF in DC operation For RthJS in other conditions refer to the curves in this chapter. Datasheet 8 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Thermal characteristics Figure 13 Thermal resistance RthJS in pulse operation Figure 14 Permissible forward current ratio IFmax/IDC in pulse operation Datasheet 9 v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode References 5 [1] References Infineon AG - Recommendations for Printed Circuit Board Assembly of Infineon TSLP/TSSLP/TSNP Packages Revision history Document version Date of release Description of changes 2.0 2018-09-07 • • Datasheet New layout of datasheet Typical values and curves updated to the values of the production (No product or process change behind) 10 v2.0 2018-06-28 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-06-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-obw1529670163684 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury