BAT6307WE6327HTSA1

BAT63... Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • For high-speed applications • Zero bias detector diode • Pb-free (RoHS compliant) package BAT63-02V BAT63-07W " ! ,   ,  ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BAT63-02V BAT63-07W Package SC79 SOT343 Configuration single parallel pair LS(nH) 0.6 1.6 Marking d 63s Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 3 Forward current IF 100 Total power dissipation Ptot 100 TS ≤ 114°C, BAT63-07W 100 Tj Storage temperature Tstg V mA mW TS ≤ 120°C, BAT63-02V Junction temperature Unit 150 °C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value K/W BAT63-02V ≤ 295 BAT63-07W ≤ 355 1 Unit 2011-06-15 BAT63... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. IR - - 10 µA VF - 190 300 mV ∆ VF - - 20 CT - 0.65 0.85 pF R0 - 30 - kΩ DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Forward voltage matching2) IF = 1 mA AC Characteristics Diode capacitance VR = 0.2 V, f = 1 MHz Differential resistance VR = 0 , f = 10 kHz 1For calculation of RthJA please refer to Application Note Thermal Resistance 2∆V F is the difference between lowest and highest VF in a multiple diode component. 2 2011-06-15 BAT63... Diode capacitance CT = ƒ (VR) Forward current IF = ƒ (VF) f = 1MHz TA = Parameter 10 -1 1 pF A 0.8 10 -2 IF CT 0.7 0.6 0.5 TA=125°C TA=85°C TA=25°C TA=-40°C 0.4 10 -3 0.3 0.2 0.1 0 0 0.5 1 1.5 2 V 10 -4 0 3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VR V 1 VF Forward current IF = ƒ (TS ) Forward current IF = ƒ (TS ) BAT63-07W BAT63-02V 120 120 mA mA 80 IF IF 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 C° 0 0 150 TS 15 30 45 60 75 90 105 120 C° 150 TS 3 2011-06-15 BAT63... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAT63-07W IFmax/ IFDC = ƒ (t p) BAT63-07W 10 3 10 1 RthjS IFmax /IFDC KW 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 mA 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Pulse Load RthJS = ƒ (tp) Permissible Pulse Load BAT63-02V IFmax/ IFDC = ƒ (t p) BAT63-02V 10 3 10 1 RthjS IFmax /IFDC KW 10 1 -6 10 10 -5 10 -4 10 -3 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 mA 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 2 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 4 2011-06-15 BAT63... Rectifier voltage Vout = ƒ (Vin) Testcircuit f = 2.4GHz RL = Parameter in kΩ 10 3 mV D.U.T 10 2 Vout V I R IN C 50 Ω 1nF L R L V0 10 1 500 200 100 50 20 10 0 10 -1 10 -2 10 -3 -1 10 10 0 10 1 10 2 mV 10 3 Vin 5 2011-06-15 Package SC79 6 BAT63... 2011-06-15 BAT63... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 7 2011-06-15 Package SOT343 BAT63... Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 0.6 +0.1 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 8 2011-06-15 BAT63... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2011-06-15