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BAV170E6327

BAV170E6327

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO-236-3

  • 描述:

    RECTIFIER DIODE

  • 数据手册
  • 价格&库存
BAV170E6327 数据手册
BAV170... Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAV170 ! , ,   Type Package Configuration Marking BAV170 SOT23 common cathode JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 Peak reverse voltage VRM 85 Forward current IF 200 Non-repetitive peak surge forward current IFSM Value Unit V mA A t = 1 µs 4.5 t=1s 0.5 Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS ≤ 460 K/W Total power dissipation TS ≤ 35°C -65 ... 150 BAV170 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAV170... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 85 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current IR nA VR = 75 V - - 5 VR = 75 V, TA = 150 °C - - 80 Forward voltage mV VF IF = 1 mA - - 900 IF = 10 mA - - 1000 IF = 50 mA - - 1100 IF = 150 mA - - 1250 CT - 2 - pF trr - 0.6 1.5 µs AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA, RL = 100 Ω Test circuit for reverse recovery time D.U.T. ΙF Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF EHN00019 2 2007-04-19 BAV170... Reverse current IR = ƒ (TA) Forward Voltage VF = ƒ (TA) IF = Parameter VR = 70V 10 2 ΙR BAV 170 EHB00080 BAV 170 1.5 nA EHB00083 V max VF 10 1 Ι F = 150 mA 1.0 10 0 50 mA 10 mA typ 1 mA 10 -1 0.1 mA 0.5 10-2 10-3 0 50 100 ˚C 0 150 0 50 100 TA Forward current IF = ƒ (T S) TA = 25°C BAV170 EHB00081 250 mA mA 200 175 100 IF ΙF BAV 170 150 TA Forward current IF = ƒ (VF) 150 ˚C typ max 150 125 100 50 75 50 25 0 0 0.5 1.0 V 0 0 1.5 15 30 45 60 75 90 105 120 °C 150 TS VF 3 2007-04-19 BAV170... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load IFmax / I FDC = ƒ (t p) 10 2 I Fmax/IFDC 10 3 RthJS 10 2 10 1 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -7 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 TP 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TP 4 2007-04-19 Package SOT23 BAV170... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2007-04-19 BAV170... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19
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