BC807UE6327HTSA1

BC807U PNP Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two (galvanic) internal isolated Transistor with good matching in on package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking BC807U 5Bs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Collector current IC Peak collector current, tp ≤ 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 500 Unit V mA 1000 TS ≤ 115 °C 1 -65 ... 150 2011-08-11 BC807U Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 105 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)CEO 45 - - V(BR)CBO 50 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 °C - - 50 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain2) - hFE IC = 100 mA, VCE = 1 V 160 250 400 IC = 500 mA, VCE = 1 V 40 - - VCEsat - - 0.7 VBEsat - - 1.2 fT - 200 - MHz Ccb - 8 - pF Ceb - 60 - Collector-emitter saturation voltage2) V IC = 500 mA, IB = 50 mA Base emitter saturation voltage2) IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance f = 1 MHz, VBE = 10 V Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 2011-08-11 BC807U DC current gain hFE = ƒ(IC) VCE = 1 V Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 10 10 3 EHP00215 10 3 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 hFE 5 10 2 10 1 5 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 -4 10 0 5 10 -3 10 -2 10 -1 10 -1 0 A 10 0 0.2 0.6 0.4 IC Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V IC = ƒ(VBEsat), hFE = 10 ΙC mA 10 Ι CBO 150 ˚C 25 ˚C -50 ˚C EHP00213 10 5 EHP00214 2 0.8 V CEsat Base-emitter saturation voltage 10 3 V nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10 1 5 10 -1 0 1.0 2.0 3.0 V 10 0 4.0 V BEsat 0 50 100 ˚C 150 TA 3 2011-08-11 BC807U Transition frequency fT = ƒ(IC) VCE = 5 V Emitter-base capacitance Ceb = ƒ(VEB) EHP00210 10 3 65 pF MHz 55 5 CCB/CEB fT Collector-base capacitance Ccb = ƒ(VCB) 50 45 40 35 10 2 30 25 5 20 CEB 15 10 CCB 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 2 4 6 8 10 12 14 20 VCB/V EB ΙC Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 400 K/W mW 10 2 RthJS 300 Ptot V 16 250 10 1 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 150 10 0 100 50 0 0 20 40 60 80 100 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-08-11 BC807U Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) Ptotmax/PtotDC 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-08-11 Package SC74 BC807U Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 0.15 +0.1 -0.06 (0.35) 10˚ MAX. 2.9 ±0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 6 2011-08-11 BC807U Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-08-11