BC846...-BC850...
NPN Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC856...-BC860...(PNP)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
1Pb-containing
package may be available upon special request
1
2010-06-28
BC846...-BC850...
Type
Marking
Pin Configuration
Package
BC846A
1As
1=B
2=E
3=C
-
-
-
SOT23
BC846B
1Bs
1=B
2=E
3=C
-
-
-
SOT23
BC846BW
1Bs
1=B
2=E
3=C
-
-
-
SOT323
BC847A
1Es
1=B
2=E
3=C
-
-
-
SOT23
BC847B
1Fs
1=B
2=E
3=C
-
-
-
SOT23
BC847BF*
1Fs
1=B
2=E
3=C
-
-
-
TSFP-3
BC847BL3
1F
1=B
2=E
3=C
-
-
-
TSLP-3-1
BC847BW
1Fs
1=B
2=E
3=C
-
-
-
SOT323
BC847C
1Gs
1=B
2=E
3=C
-
-
-
SOT23
BC847CW
1Gs
1=B
2=E
3=C
-
-
-
SOT323
BC848A
1Js
1=B
2=E
3=C
-
-
-
SOT23
BC848B
1Ks
1=B
2=E
3=C
-
-
-
SOT23
BC848BL3
1K
1=B
2=E
3=C
-
-
-
TSLP-3-1
BC848BW
1Ks
1=B
2=E
3=C
-
-
-
SOT323
BC848C
1Ls
1=B
2=E
3=C
-
-
-
SOT23
BC848CW
1Ls
1=B
2=E
3=C
-
-
-
SOT323
BC849B
2Bs
1=B
2=E
3=C
-
-
-
SOT23
BC849C
2Cs
1=B
2=E
3=C
-
-
-
SOT23
BC849CW
2Cs
1=B
2=E
3=C
-
-
-
SOT323
BC850B
2Fs
1=B
2=E
3=C
-
-
-
SOT23
BC850BW
2Fs
1=B
2=E
3=C
-
-
-
SOT323
BC850C
2Gs
1=B
2=E
3=C
-
-
-
SOT23
BC850CW
2Gs
1=B
2=E
3=C
-
-
-
SOT323
* Not for new design
2
2010-06-28
BC846...-BC850...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC846...
65
BC847..., BC850...
45
BC848..., BC849...
30
Collector-emitter voltage
VCES
BC846...
80
BC847..., BC850...
50
BC848..., BC849...
30
Collector-base voltage
VCBO
BC846...
80
BC847..., BC850...
50
BC848..., BC849...
30
Emitter-base voltage
VEBO
BC846...
6
BC847..., BC850...
6
BC848..., BC849...
6
Collector current
IC
100
Peak collector current, tp ≤ 10 ms
ICM
200
Total power dissipation-
Ptot
330
TS ≤ 128 °C, BC847F
250
TS ≤ 135 °C, BC847L3-BC848L3
250
TS ≤ 124 °C, BC846W-BC850W
250
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
mA
mW
TS ≤ 71 °C, BC846-BC850
150
°C
-65 ... 150
Value
BC846-BC850
≤ 240
BC847F
≤ 90
BC847L3-BC848L3
≤ 60
BC846W-BC850W
≤ 105
1For
Unit
Unit
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
3
2010-06-28
BC846...-BC850...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BC846...
65
-
-
IC = 10 mA, IB = 0 , BC847..., BC850...
45
-
-
IC = 10 mA, IB = 0 , BC848..., BC849...
30
-
-
IC = 10 µA, IE = 0 , BC846...
80
-
-
IC = 10 µA, IE = 0 , BC847..., BC850...
50
-
-
IC = 10 µA, IE = 0 , BC848..., BC849...
30
-
-
-
6
-
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 0 , IC = 10 µA
Collector-base cutoff current
µA
I CBO
VCB = 45 V, IE = 0
-
0.015
-
VCB = 30 V, IE = 0 , TA = 150 °C
-
5
-
DC current gain1)
-
h FE
IC = 10 µA, VCE = 5 V, hFE-grp.A
-
140
-
IC = 10 µA, VCE = 5 V, hFE-grp.B
-
250
-
IC = 10 µA, VCE = 5 V, hFE-grp.C
-
480
-
IC = 2 mA, VCE = 5 V, hFE-grp.A
110
180
220
IC = 2 mA, VCE = 5 V, hFE-grp.B
200
290
450
IC = 2 mA, VCE = 5 V, hFE-grp.C
420
520
800
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
90
250
IC = 100 mA, IB = 5 mA
-
200
600
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
900
-
IC = 2 mA, VCE = 5 V
580
660
700
IC = 10 mA, VCE = 5 V
-
-
770
Base emitter saturation voltage 1)
VBEsat
Base-emitter voltage1)
VBE(ON)
1Pulse test: t < 300µs; D < 2%
4
2010-06-28
BC846...-BC850...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
fT
-
250
-
MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
-
0.95
-
pF
Ceb
-
9
-
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
h11e
kΩ
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
2.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
4.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
8.7
-
Open-circuit reverse voltage transf. ratio
10-4
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
1.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
3
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
200
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
330
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
600
-
Short-circuit forward current transf. ratio
h21e
Open-circuit output admittance
µS
h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A
-
18
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B
-
30
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C
-
60
-
F
-
1.2
4
Vn
-
-
Noise figure
dB
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, BC849..., BC850...
Equivalent noise voltage
0.135 µV
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 10 ... 50 Hz , BC850...
5
2010-06-28
BC846...-BC850...
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V
IC = ƒ(VCEsat), hFE = 20
EHP00365
10 3
h FE 5
100 C
EHP00367
10 2
ΙC
mA
100 C
25 C
-50 C
25 C
-50 C
10 2
10 1
5
5
10 1
10
5
5
10 0
10 -2
5 10 -1
5 10 0
5 10 1
0
10 -1
mA 10 2
0
0.1
0.2
0.4
0.3
ΙC
V 0.5
VCEsat
Base-emitter saturation voltage
Collector cutoff current ICBO = ƒ(TA)
IC = ƒ(V BEsat), hFE = 20
VCB = 30 V
EHP00364
10 2
Ι CB0
Ι C mA
100 C
25 C
-50 C
10 1
EHP00415
10 4
nA
max
10 3
5
5
typ
10 2
5
10 0
10
5
1
5
10 -1
10 0
0
0.2
0.4
0.6
0.8
V
1.2
0
50
100
˚C
150
TA
V BEsat
6
2010-06-28
BC846...-BC850...
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00363
10 3
13
pF
MHz
11
5
CCB/C EB
fT
10
9
8
7
10 2
6
CEB
5
5
4
3
2
1
10 1
10 -1
5 10 0
5
10 1
mA
CCB
0
0
10 2
4
8
12
360
300
mW
300
250
270
225
240
200
Ptot
Ptot
22
Total power dissipation Ptot = ƒ(TS)
BC847BF
mW
210
175
180
150
150
125
120
100
90
75
60
50
30
25
0
0
V
VCB/VEB
ΙC
Total power dissipation Ptot = ƒ(TS)
BC846-BC850
16
15
30
45
60
75
90 105 120
0
0
°C 150
TS
15
30
45
60
75
90 105 120 °C
150
TS
7
2010-06-28
BC846...-BC850...
Total power dissipation Ptot = ƒ(TS)
BC847BL3/BC848BL3
Total power dissipation Ptot = ƒ(TS)
BC846W-BC850W
300
300
mW
250
250
225
225
200
200
P tot
P tot
mW
175
175
150
150
125
125
100
100
75
75
50
50
25
25
0
0
15
30
45
60
90 105 120 °C
75
0
0
150
15
30
45
60
90 105 120 °C
75
TS
150
TS
Permissible Puls Load R thJS = ƒ (tp)
BC847BF
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BC846/W-BC850/W
10 2
EHP00362
10 3
Ptot max
Ptot DC
tp
tp
D=
T
K/W
10 2
RthJS
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 -1 -6
10
0
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
8
2010-06-28
BC846...-BC850...
Permissible Puls Load R thJS = ƒ (tp)
BC847BL3, BC848BL3
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BC847BF
10 2
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -6
10
RthJS
P totmax/P totDC
10 3
10
-5
10
-4
10
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
-3
10
-2
s
10
10 -1 -7
10
0
10
-6
10
-5
10
-4
10
-3
10
tp
-2
s
10
0
tp
Permissible Pulse Load
Noise figure F = ƒ(VCE)
Ptotmax/P totDC = ƒ(tp)
IC = 0.2mA, R S = 2kΩ , f = 1kHz
BC847BL3, BC848BL3
Ptotmax/ PtotDC
10 3
20
F
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2
BC 846...850
EHP00370
dB
15
10
10 1
5
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 -1
0
tp
5
10 0
10 1
V
10 2
VCE
9
2010-06-28
BC846...-BC850...
Noise figure F = ƒ(f)
Noise figure F = ƒ(I C)
VCE = 5V, f = 120Hz
IC = 0.2 mA, VCE = 5V, RS = 2 kΩ
20
BC 846...850
EHP00371
20
BC 846...850
EHP00372
dB
dB
F
F
15
15
RS = 1 MΩ
100 k Ω
10 k Ω
10
10
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
10 -2
10 -1
10 0
ΙC
f
Noise figure F = ƒ(IC )
Noise figure F = ƒ(I C)
VCE = 5V, f = 10kHz
VCE = 5V, f = 1kHz
20
mA 10 1
BC 846...850
EHP00373
20
BC 846...850
EHP00374
dB
dB
F
F
15
15
RS = 1 MΩ
R S = 1 MΩ
100 k Ω 10 k Ω
100 kΩ
10
10
10 k Ω
500 Ω
1 kΩ
5
5
500 Ω
0
10 -3
10 -2
10 -1
10 0
1 kΩ
0
10 -3
mA 10 1
ΙC
10 -2
10 -1
10 0
mA 10 1
ΙC
10
2010-06-28
Package SOT23
BC846...-BC850...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
11
2010-06-28
Package SOT323
BC846...-BC850...
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
12
2010-06-28
Package TSFP-3
BC846...-BC850...
Package Outline
0.2 ±0.05
0.55 ±0.04
1
1.2 ±0.05
0.2 ±0.05
3
2
0.2 ±0.05
10˚ MAX.
0.8 ±0.05
1.2 ±0.05
0.15 ±0.05
0.4 ±0.05
0.4 ±0.05
Foot Print
1.05
0.45
0.4
0.4
0.4
Marking Layout (Example)
Manufacturer
BCR847BF
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
1.2
1.5
8
0.3
Pin 1
0.7
1.35
13
2010-06-28
Package TSLP-3-1
BC846...-BC850...
Package Outline
Bottom view
0.4 +0.1
0.6 ±0.05
0.5 ±0.035
2
1 ±0.05
3
0.65 ±0.05
3
1)
2
1
1)
0.05 MAX.
0.35 ±0.05
Pin 1
marking
2 x 0.15 ±0.035
2 x 0.25 ±0.035
1
0.25 ±0.035
1)
Top view
1)
1) Dimension applies to plated terminal
Foot Print
R0.1
0.2
0.225
0.2
0.225
0.315
0.35
1
0.3
0.945
0.35
0.45
0.275
0.6
0.355
For board assembly information please refer to Infineon website "Packages"
0.17
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
1.16
Pin 1
marking
8
4
0.76
14
2010-06-28
BC846...-BC850...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( ).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
15
2010-06-28
