BC857CB5003XT

BC857CB5003XT

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT-23

  • 描述:

    TRANS PNP 45V 0.1A SOT-23

  • 详情介绍
  • 数据手册
  • 价格&库存
BC857CB5003XT 数据手册
BC856...-BC860... PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846...-BC850... (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 1Pb-containing package may be available upon special request 1 2007-09-25 BC856...-BC860... Type Marking Pin Configuration BC856A 3As 1=B 2=E 3=C - - - SOT23 BC856B 3Bs 1=B 2=E 3=C - - - SOT23 BC856BW 3Bs 1=B 2=E 3=C - - - SOT323 BC857A 3Es 1=B 2=E 3=C - - - SOT23 BC857B 3Fs 1=B 2=E 3=C - - - SOT23 BC857BF 3Fs 1=B 2=E 3=C - - - TSFP-3 BC857BL3 3F 1=B 2=E 3=C - - - TSLP-3-1 BC857BW 3Fs 1=B 2=E 3=C - - - SOT323 BC857C 3Gs 1=B 2=E 3=C - - - SOT23 BC857CW 3Gs 1=B 2=E 3=C - - - SOT323 BC858A 3Js 1=B 2=E 3=C - - - SOT23 BC858B 3Ks 1=B 2=E 3=C - - - SOT23 BC858BL3 3K 1=B 2=E 3=C - - - TSLP-3-1 BC858BW 3Ks 1=B 2=E 3=C - - - SOT323 BC858C 3Ls 1=B 2=E 3=C - - - SOT23 BC858CW 3Ls 1=B 2=E 3=C - - - SOT323 BC859B 4Bs 1=B 2=E 3=C - - - SOT23 BC859C 4Cs 1=B 2=E 3=C - - - SOT23 BC860B 4Fs 1=B 2=E 3=C - - - SOT23 BC860BW 4Fs 1=B 2=E 3=C - - - SOT323 BC860CW 4Gs 1=B 2=E 3=C - - - SOT323 2 Package 2007-09-25 BC856...-BC860... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC856... 65 BC857..., BC860... 45 BC858..., BC859... 30 Collector-base voltage VCBO BC856... 80 BC857..., BC860... 50 BC858..., BC859... 30 5 Emitter-base voltage VEBO Collector current IC 100 Peak collector current ICM 200 Total power dissipation Ptot 330 TS ≤ 128 °C, BC857BF-BC858BF 250 TS ≤ 135 °C, BC857BL3, BC860BL3 250 TS ≤ 124 °C, BC856W-BC860W 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS mA mW TS ≤ 71 °C, BC856-BC860 150 °C -65 ... 150 Value BC856-BC860 ≤ 240 BC857BF-BC858BF ≤ 90 BC857BL3, BC858BL3 ≤ 60 BC856W-BC860W ≤ 105 1For Unit Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 3 2007-09-25 BC856...-BC860... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC856... 65 - - IC = 10 mA, IB = 0 , BC857..., BC860... 45 - - IC = 10 mA, IB = 0 , BC858..., BC859... 30 - - IC = 10 µA, IE = 0 , BC856... 80 - - IC = 10 µA, IE = 0 , BC857..., BC860... 50 - - IC = 10 µA, IE = 0 , BC858..., BC859... 30 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 1 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 45 V, IE = 0 - - 0.015 VCB = 30 V, IE = 0 , TA = 150 °C - - 5 DC current gain1) - hFE IC = 10 µA, VCE = 5 V, hFE-grp.A - 140 - IC = 10 µA, VCE = 5 V, hFE-grp.B - 250 - IC = 10 µA, VCE = 5 V, hFE-grp.C - 480 - IC = 2 mA, VCE = 5 V, hFE-grp.A 125 180 250 IC = 2 mA, VCE = 5 V, hFE-grp.B 220 290 475 IC = 2 mA, VCE = 5 V, hFE-grp.C 420 520 800 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 0.5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base emitter saturation voltage1) VBEsat Base-emitter voltage1) 1Pulse VBE(ON) test: t < 300µs; D < 2% 4 2007-09-25 BC856...-BC860... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 250 - MHz Ccb - 1.5 - pF Ceb - 8 - AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B - 4.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C - 8.7 - Open-circuit reverse voltage transf. ratio 10-4 h12e IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A - 1.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B - 2 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C - 3 - Short-circuit forward current transf. ratio h21e - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A - 200 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B - 330 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C - 600 - Open-circuit output admittance µS h22e IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A - 18 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B - 30 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C - 60 - F - 1 4 dB Vn - - 0.11 µV Noise figure IC = 0.2 mA, VCE = 5 V, f = 1 kHz, D f = 200 Hz, RS = 2 kΩ, BC859, BC850 Equivalent noise voltage IC = 200 mA, VCE = 5 V, RS = 2 kΩ, f = 10...50 Hz, BC860 5 2007-09-25 BC856...-BC860... DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 1 V IC = ƒ(VCEsat ), hFE = 20 EHP00382 10 3 h FE 5 EHP00380 10 2 mA ΙC 100 C 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 0 10 -1 2 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA) IC = ƒ(VBEsat), hFE = 20 VCBO = 30 V EHP00379 10 2 mA ΙC EHP00381 10 4 nA Ι CB0 10 10 3 100 C 25 C -50C 1 5 max 10 2 5 5 typ 10 1 5 10 0 5 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C 150 TA 6 2007-09-25 BC856...-BC860... Transition frequency fT = ƒ(IC) VCE = 5 V Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00378 10 3 12 pF MHz 5 10 CCB(CEB ) fT 9 8 7 10 2 6 5 5 4 CEB 3 2 CCB 1 10 1 10 -1 5 10 0 5 10 1 mA ΙC 0 0 10 2 4 8 12 16 V Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS) BC856-BC860 BC857BF, BC858BF 360 300 mW 300 250 270 225 240 200 Ptot Ptot mW 210 175 180 150 150 125 120 100 90 75 60 50 30 25 0 0 22 VCB(VEB 15 30 45 60 75 90 105 120 0 0 °C 150 TS 15 30 45 60 75 90 105 120 °C 150 TS 7 2007-09-25 BC856...-BC860... Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS) BC857BL3, BC858BL3 BC856W-BC860W 300 300 mW 250 250 225 225 200 200 Ptot Ptot mW 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p) Ptotmax/PtotDC = ƒ(tp ) BC857BF, BC858BF BC856/W-BC860/W 10 2 EHP00377 10 3 Ptot max 5 Ptot DC tp tp D= T K/W 10 2 RthJS T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 2007-09-25 BC856...-BC860... Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p) Ptotmax/PtotDC = ƒ(tp ) BC857BL3, BC858BL3 BC857BF, BC858BF 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 RthJS Ptotmax/PtotDC 10 3 10 -5 10 -4 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -3 10 -2 s 10 10 -1 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) BC857BL3, BC858BL3 Ptotmax/ PtotDC 10 3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 9 2007-09-25 Package SOT23 BC856...-BC860... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 10 2007-09-25 Package SOT323 BC856...-BC860... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 11 2007-09-25 Package TSFP-3 BC856...-BC860... Package Outline 0.2 ±0.05 0.55 ±0.04 1 1.2 ±0.05 0.2 ±0.05 3 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.2 ±0.05 0.15 ±0.05 0.4 ±0.05 0.4 ±0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout (Example) Manufacturer BCR847BF Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 12 2007-09-25 Package TSLP-3-1 BC856...-BC860... Package Outline Bottom view 0.4 +0.1 0.6 ±0.05 0.5 ±0.035 2 1 ±0.05 3 0.65 ±0.05 3 1) 2 1 1) 0.05 MAX. 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 2 x 0.25 ±0.035 1 0.25 ±0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 13 2007-09-25 BC856...-BC860... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 2007-09-25
BC857CB5003XT
物料型号:BC856A, BC856B, BC856BW, BC857A, BC857B, BC857BF, BC857BL3, BC857BW, BC857C, BC857CW, BC858A, BC858B, BC858BL3, BC858BW, BC858C, BC858CW, BC859B, BC859C, BC860B, BC860BW, BC860CW

器件简介: - 适用于音频频率输入阶段和驱动应用 - 高电流增益 - 低集电极-发射极饱和电压 - 30 Hz至15 kHz之间的低噪声 - 符合RoHS标准的无铅封装

引脚分配:所有型号的引脚分配均为1=B(基极),2=E(发射极),3=C(集电极)

参数特性: - 集电极-发射极电压(VCEO):BC856和BC857系列为45V,BC860和BC858系列为30V - 集电极-基极电压(VCBO):50V或30V - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):100mA - 峰值集电极电流(ICM):200mA - 总功耗(Ptot):根据不同型号和结温范围,从250mW至330mW不等 - 封装热阻(RthJs):根据不同型号,从60至240K/W不等

功能详解:文档提供了详细的电气特性表,包括直流特性和交流特性,如集电极-发射极击穿电压、集电极-基极击穿电压、发射极-基极击穿电压、集电极-基极截止电流、直流电流增益(hFE)、集电极-发射极饱和电压、基极-发射极饱和电压和基极-发射极电压等。

应用信息:适用于音频频率输入阶段和驱动应用。

封装信息:提供了SOT23、SOT323、TSFP-3和TSLP-3-1等封装的详细尺寸和标记布局。
BC857CB5003XT 价格&库存

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