BCP5616H6327

BCP54...-BCP56... NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCP54 * 1=B 2=C 3=E 4=C - - SOT223 BCP54-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP55 * 1=B 2=C 3=E 4=C - - SOT223 BCP55-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP56-10 * 1=B 2=C 3=E 4=C - - SOT223 BCP56-16 * 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as the type-name 1 2011-10-13 BCP54...-BCP56... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCP54 45 BCP55 60 BCP56 80 Collector-base voltage Unit VCBO BCP54 45 BCP55 60 BCP56 100 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp ≤ 10 ms ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 2 W 150 °C A mA TS ≤ 120°C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS -65 ... 150 Value ≤ 15 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-10-13 BCP54...-BCP56... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCP54... 45 - - IC = 10 mA, IB = 0 , BCP55... 60 - - IC = 10 mA, IB = 0 , BCP56-10, -16 80 - - IC = 100 µA, IE = 0 , BCP54... 45 - - IC = 100 µA, IE = 0 , BCP55... 60 - - IC = 100 µA, IE = 0 , BCP56-10, -16 100 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current ICBO µA VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 °C - - 20 DC current gain1) - hFE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, VCE = 2 V, BCP54/BCP55 40 - 250 IC = 150 mA, VCE = 2 V, BCP56-10 63 100 160 IC = 150 mA, VCE = 2 V, BCP54-16...BCP56-16 100 160 250 IC = 500 mA, VCE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse test: t < 300µs; D < 2% 3 2011-10-13 BCP54...-BCP56... DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 2 V IC = ƒ(VCEsat ), hFE = 10 10 3 h FE BCP 54...56 EHP00268 5 ΙC EHP00271 mA 10 3 100 C 25 C 10 2 BCP 54...56 10 4 -50 C 5 100 C 25 C -50 C 10 2 10 1 10 1 5 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 ΙC 4 0 0.2 0.6 0.4 V V CEsat Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA) IC = ƒ(VBEsat), hFE = 10 VCBO = 30 V 10 4 ΙC BCP 54...56 EHP00270 10 4 Ι CBO mA BCP 54...56 EHP00269 nA max 10 3 10 0.8 3 100 C 25 C -50 C 10 2 10 2 typ 10 1 10 1 10 0 10 0 0 0.2 0.4 0.6 0.8 V 10 -1 1.2 V BEsat 0 50 100 C 150 TA 4 2011-10-13 BCP54...-BCP56... Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 EHP00267 2.4 MHz W 5 Ptot fT BCP 54...56 Total power dissipation P tot = ƒ(TS) 1.6 10 2 1.2 5 0.8 0.4 10 1 10 0 5 10 1 5 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 °C 75 ΙC Permissible Pulse Load RthJS = ƒ(tp) 150 TS Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 3 Ptotmax/PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-13 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BCP54...-BCP56... 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2011-10-13 BCP54...-BCP56... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-13