BCR129WE6327HTSA1

BCR129... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10 kΩ) • BCR129S: Two internally isolated transistors with good matching in one multichip package • BCR129S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR129 BCR129W BCR129S C C1 B2 E2 3 6 5 4 R1 R1 R1 TR2 TR1 1 B 2 1 2 3 E E1 B1 C2 EHA07264 EHA07265 Type Marking Pin Configuration BCR129 WVs 1=B BCR129S WVs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR129W WVs 1=B 2=E 2=E 1 3=C 3=C - - Package - SOT23 SOT323 2011-09-26 BCR129... Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 40 Input reverse voltage Vi(rev) 5 Collector current IC Total power dissipation- Ptot 100 200 BCR129S, TS ≤ 115°C 250 BCR129W, TS ≤ 124°C 250 Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS V mA mW BCR129, TS ≤ 102°C Junction temperature Unit 150 °C -65 ... 150 Value BCR129 ≤ 240 BCR129S ≤ 140 BCR129W ≤ 105 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-09-26 BCR129... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage 50 - - ICBO - - 100 nA IEBO - - 100 nA hFE 120 - 630 - - - 0.3 V Vi(off) 0.4 - 1 Vi(on) 0.5 - 1.1 R1 7 10 13 fT - 150 - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor kΩ AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 2011-09-26 BCR129... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC ), IC/IB = 20 10 3 0.5 V 0.4 hFE VCEsat V 10 2 0.35 0.3 0.25 -40 °C -25 °C 25 °C 85 °C 125 °C -40 °C -25 °C 25 °C 85 °C 125 °C 0.2 0.15 0.1 0.05 10 1 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi (on) = ƒ(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 10 2 V -40 °C -25 °C 25 °C 85 °C 125 °C Vi(off) Vi(on) V 10 1 -1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 -1 IC 4 2011-09-26 BCR129... Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS) BCR129 BCR129S 300 300 mW 250 250 225 225 200 200 Ptot Ptot mW 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) BCR129 BCR129W 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 125 100 10 0 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-09-26 BCR129... Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p) Ptotmax/PtotDC = ƒ(tp ) BCR129 BCR129S 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax / PtotDC K/W - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p) Ptotmax/PtotDC = ƒ(tp ) BCR129S BCR129W 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax / PtotDC K/W - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 6 2011-09-26 BCR129... Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) BCR129W Ptotmax / PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2011-09-26 Package SOT23 BCR129... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 8 2011-09-26 Package SOT323 BCR129... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 9 2011-09-26 Package SOT363 BCR129... Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 10 2011-09-26 BCR129... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2011-09-26