BCR48PNH6327XTSA1

BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two (galvanic) internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1= 2.2kΩ, R2 = 47kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 C1 B2 E2 6 5 4 R2 Top View 654 R1 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device R1 R2 W1s 123 TR2 TR1 1 2 3 E1 B1 C2 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling Type BCR48PN EHA07176 EHA07193 Marking WTs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Value Unit V Input forward voltage NPN Vi(fwd) 80 Input forward voltage PNP Vi(fwd) 20 Input reverse voltage NPN Vi(rev) 10 Input reverse voltage PNP Vi(rev) 5 DC collector current NPN IC 70 DC collector current PNP IC 100 Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 1 mA -65...+150 2011-07-28 BCR48PN Thermal Resistance Junction - soldering point1) RthJS ≤ 140 K/W Values Unit Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 164 µA hFE 70 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 3 Input resistor R1 32 47 62 kΩ Resistor ratio R1/R2 0.9 1 1.1 - fT - 100 - MHz Ccb - 3 - pF DC Characteristics for NPN Type Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V AC Characteristics for NPN Type Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2) Pulse test: t < 300µs; D < 2% 2 2011-07-28 BCR48PN Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 164 µA hFE 70 - - - - - 0.3 V Vi(off) 0.4 - 0.8 Vi(on) 0.5 - 1.1 Input resistor R1 1.5 2.2 2.9 Resistor ratio R1/R2 DC Characteristics for PNP Type Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V 0.042 kΩ 0.047 0.052 - AC Characteristics for PNP Type Transition frequency fT - 200 - MHz Ccb - 3 - pF IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 3 2011-07-28 BCR48PN NPN Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20 10 3 0.5 V VCEsat hFE 0.4 10 2 0.35 0.3 0.25 -40 °C -25 °C 25 °C 85 °C 125 °C 0.2 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C 0.15 0.1 0.05 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 10 2 V -40 °C -25 °C 25 °C 85 °C 125 °C Vi(off) Vi(on) V 10 1 -1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 IC 4 2011-07-28 -1 BCR48PN PNP Type DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20 10 3 0.5 V VCEsat hFE 0.4 10 2 0.35 0.3 0.25 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C 0.2 -40 °C -25 °C 25 °C 85 °C 125 °C 0.15 0.1 0.05 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration) 10 1 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C V Vi(off) Vi(on) V 10 0 10 -1 -5 10 -1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 IC 5 2011-07-28 -1 BCR48PN Total power dissipation P tot = f (TS ) 300 mW 250 Ptot 225 200 175 150 125 100 75 50 25 0 0 15 30 45 60 90 105 120 °C 75 150 TS Permissible Pulse Load RthJS = f (t p) Permissible Pulse Load Ptotmax / PtotDC = f (tp ) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 tp 6 2011-07-28 0 Package SOT363 BCR48PN Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 7 2011-07-28 BCR48PN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-07-28