BCR519E6327

BCR519 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor (R1= 4.7 kΩ) 1 C 3 R1 1 2 B E EHA07264 Type BCR519 Marking XKs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 30 Input reverse voltage Vi(rev) 5 Collector current IC 500 mA Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS V TS ≤ 79 °C -65 ... 150 Value ≤ 215 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2006-07-06 BCR519 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 - - I CBO - - 100 nA I EBO - - 100 nA h FE 120 - 630 - - - 0.3 V Vi(off) 0.4 - 0.8 Vi(on) 0.5 - 1.5 R1 3.2 4.7 6.2 fT - 100 - IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gainIC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 10 mA, VCE = 0.3 V Input resistor kΩ AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 1Pulse test: t < 300µs; D < 2% 2 2006-07-06 BCR519 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 3 mA - IC h FE 10 2 10 2 10 1 10 1 -1 10 10 0 10 1 10 2 mA 10 10 0 0 3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IC V 1 VCEsat Input on Voltage Vi(on) = ƒ(IC ) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 10 3 mA mA 10 2 10 0 IC IC 10 1 10 0 10 -1 10 -1 10 -2 10 -3 -1 10 10 0 10 1 V 10 10 -2 0 2 Vi(on) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 Vi(off) 3 2006-07-06 BCR519 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 400 K/W mW 10 2 RthJS P tot 300 250 10 1 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 10 0 100 50 0 0 20 40 60 80 120 °C 100 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 4 Ptotmax /PtotDC - 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2006-07-06 Package SOT23 BCR519 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2006-07-06 BCR519 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2006-07-06