BCV28, BCV48
PNP Silicon Darlington Transistors
• For general AF applications
1
2
• High collector current
3
2
• High current gain
• Complementary types: BCV29, BCV49 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCV28
ED
1=B
2=C
3=E
SOT89
BCV48
EE
1=B
2=C
3=E
SOT89
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCV28
30
BCV48
60
Collector-base voltage
Unit
VCBO
BCV28
40
BCV48
80
Emitter-base voltage
VEBO
10
Collector current
IC
500
Peak collector current, tp ≤ 10 ms
ICM
800
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
1
W
150
°C
mA
TS ≤ 130 °C
Junction temperature
Tj
Storage temperature
Tstg
1
-65 ... 150
2011-10-05
BCV28, BCV48
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 20
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BCV28
30
-
-
IC = 10 mA, IB = 0 , BCV48
60
-
-
IC = 100 µA, IE = 0 , BCV28
40
-
-
IC = 100 µA, IE = 0 , BCV48
80
-
-
10
-
-
Collector-base breakdown voltage
Unit
V
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 30 V, IE = 0 , BCV28
-
-
0.1
VCB = 60 V, IE = 0 , BCV48
-
-
0.1
VCB = 30 V, IE = 0 , TA ≤ 150 °C, BCV28
-
-
10
VCB = 60 V, IE = 0 , TA ≤ 150 °C, BCV48
-
-
10
-
-
100
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
hFE
IC = 10 µA, VCE = 1 V, BCV28
4000
-
-
IC = 10 µA, VCE = 1 V, BCV48
2000
-
-
IC = 10 mA, VCE = 5 V, BCV28
10000
-
-
IC = 10 mA, VCE = 5 V, BCV48
4000
-
-
IC = 100 mA, VCE = 5 V, BCV28
20000
-
-
IC = 100 mA, VCE = 5 V, BCV48
10000
-
-
IC = 0.5 A, VCE = 5 V, BCV28
4000
-
-
IC = 0.5 A, VCE = 5 V, BCV48
2000
-
-
VCEsat
-
-
1
VBEsat
-
-
1.5
Collector-emitter saturation voltage1)
V
IC = 100 mA, IB = 0.1 mA
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
2
2011-10-05
BCV28, BCV48
1Pulse
test: t < 300µs; D < 2%
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
200
-
MHz
Ccb
-
4.5
-
pF
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
3
2011-10-05
BCV28, BCV48
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 6
h FE
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 1000
BCV 28/48
EHP00316
10 3
5
ΙC
125 ˚C
10 5
BCV 28/48
EHP00313
mA
150 ˚C
25 ˚C
-50 ˚C
10 2
25 ˚C
5
5
-55 ˚C
10 4
10 1
5
5
10 3
10 -1
10
0
10
1
10
2
mA 10
10 0
3
0
0.5
1.0
ΙC
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
IC = ƒ(VBEsat), hFE = 1000
BCV 28/48
EHP00314
Ι C mA
10 4
Ι CBO
150 ˚C
25 ˚C
-50 ˚C
10 2
1.5
V CEsat
Base-emitter saturation voltage
10 3
V
BCV 28/48
EHP00309
nA
max
10 3
5
10 2
typ
10 1
10 1
5
10 0
0
1.0
2.0
V
10 0
3.0
0
50
100
˚C
150
TA
V BEsat
4
2011-10-05
BCV28, BCV48
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 3
BCV 28/48
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00312
16
pF
MHz
CCB(CEB )
fT
12
10
10 2
8
CEB
6
5
4
CCB
2
10 1
10 0
10 1
10 2
mA
0
0
10 3
4
8
12
16
V
22
VCB(VEB
ΙC
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
1200
5
BCV 28/48
Ptot max
Ptot DC
mW
D=
Ptot
tp
T
tp
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
800
5
600
10 1
400
EHP00310
5
200
0
0
15
30
45
60
75
90 105 120
°C
TS
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2011-10-05
Package SOT89
BCV28, BCV48
Package Outline
4.5 ±0.1
45˚
B
1.5 ±0.1
1)
1.6 ±0.2
0.2 MAX.
2
2.75 +0.1
-0.15
10˚ MAX.
1 ±0.2
1
0.15
4 ±0.25
1 ±0.1
1)
2.5 ±0.1
0.25 ±0.05
3
1.5
0.35 ±0.1
0.45 +0.2
-0.1
3
0.15
M
B x3
0.2 B
1) Ejector pin markings possible
Foot Print
1.2
1.0
2.5
2.0
0.8
0.8
0.7
Marking Layout (Example)
BAW78D
Type code
Pin 1
2005, June
Date code (YM)
Manufacturer
Standard Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.2
4.6
12
8
Pin 1
4.3
6
1.6
2011-10-05
BCV28, BCV48
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
7
2011-10-05