BCX54 ...- BCX56...
NPN Silicon AF Transistors
• For AF driver and output stages
1
2
• High collector current
3
2
• Low collctor-emitter saturation voltage
• Complementary types: BCX51...BCX53 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
BCX54-16
BD
1=B
2=C
3=E
SOT89
BCX55
BE
1=B
2=C
3=E
SOT89
BCX55-16
BM
1=B
2=C
3=E
SOT89
BCX56
BH
1=B
2=C
3=E
SOT89
BCX56-10
BK
1=B
2=C
3=E
SOT89
BCX56-16
BL
1=B
2=C
3=E
SOT89
1
Package
2011-09-19
BCX54 ...- BCX56...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
-
BCX54
45
BCX55
60
BCX56
80
Collector-base voltage
Unit
V
VCBO
BCX54
45
BCX55
60
BCX56
100
Emitter-base voltage
VEBO
5
Collector current
IC
1
Peak collector current, tp ≤ 10 ms
ICM
1.5
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
2
W
150
°C
A
mA
TS ≤ 120°C
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
-65 ... 150
Value
≤ 15
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-19
BCX54 ...- BCX56...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BCX54
45
-
-
IC = 10 mA, IB = 0 , BCX55
60
-
-
IC = 10 mA, IB = 0 , BCX56
80
-
-
IC = 100 µA, IE = 0 , BCX54
45
-
-
IC = 100 µA, IE = 0 , BCX55
60
-
-
IC = 100 µA, IE = 0 , BCX56
100
-
-
5
-
-
Collector-base breakdown voltage
Unit
V
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 30 V, IE = 0
-
-
0.1
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
20
DC current gain1)
-
hFE
IC = 5 mA, VCE = 2 V
25
-
-
IC = 150 mA, VCE = 2 V, BCX55/BCX56
40
-
250
IC = 150 mA, VCE = 2 V, BCX55-10/BCX56-10
63
100
160
IC = 150 mA, VCE = 2 V, BCX54-16...BCX56-16
100
160
250
IC = 500 mA, VCE = 2 V
25
-
-
VCEsat
-
-
0.5
VBE(ON)
-
-
1
fT
-
100
-
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base-emitter voltageIC = 500 mA, VCE = 2 V
AC Characteristics
Transition frequency
MHz
IC = 50 mA, VCE = 10 V, f = 20 MHz
1Pulse
test: t < 300µs; D < 2%
3
2011-09-19
BCX54 ...- BCX56...
DC current gain hFE = ƒ(IC)
VCE = 2 V
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
10 3
4 BCX 54...56
10
EHP00449
mA
ΙC
3
10
5
100°C
10
2
25°C
100 ˚C
25 ˚C
-50 ˚C
2
10
5
-50°C
1
10
5
10 1 -1
10
10
0
10
1
10
2
10
0
10
3
0
0.2
0.4
0.6
V
0.8
VCE sat
Base-emitter saturation voltage
Collector current IC = ƒ(VBE )
IC = ƒ(VBEsat), hFE = 10
VCE = 2V
10 4
BCX 54...56
EHP00450
10 4
BCX 54...56
EHP00448
mA
mA
ΙC
ΙC
10 3
10 3
5
5
100 ˚C
25 ˚C
-50 ˚C
100 ˚C
25 ˚C
-50 ˚C
10 2
10 2
5
5
1
1
10
10
5
5
10 0
0
0.2
0.4
0.6
0.8
10 0
1.0 V 1.2
0
0.2
0.4
0.6
0.8
1.0 V 1.2
VBE
VBE sat
4
2011-09-19
BCX54 ...- BCX56...
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
BCX 54...56
10 4
nA
Ι CB0
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
EHP00447
10 3
BCX 54...56
EHP00445
MHz
max
10 3
fT
5
5
10 2
5
10 2
typ
10 1
5
10
5
0
5
10 -1
0
50
100
˚C
10 1
10 0
150
5 10 1
5
10 2
mA
10 3
ΙC
TA
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 2
2.4
RthJS
Ptot
W
1.6
10 1
1.2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
0.8
0.4
0
0
15
30
45
60
75
90 105 120 °C
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
2011-09-19
BCX54 ...- BCX56...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
Ptotmax/PtotDC
10 3
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2011-09-19
Package SOT89
BCX54 ...- BCX56...
Package Outline
4.5 ±0.1
45˚
B
1.5 ±0.1
1)
1.6 ±0.2
0.2 MAX.
2
2.75 +0.1
-0.15
10˚ MAX.
1 ±0.2
1
0.15
4 ±0.25
1 ±0.1
1)
2.5 ±0.1
0.25 ±0.05
3
1.5
0.35 ±0.1
0.45 +0.2
-0.1
3
0.15
M
B x3
0.2 B
1) Ejector pin markings possible
Foot Print
1.2
1.0
2.5
2.0
0.8
0.8
0.7
Marking Layout (Example)
BAW78D
Type code
Pin 1
2005, June
Date code (YM)
Manufacturer
Standard Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.2
4.6
12
8
Pin 1
4.3
7
1.6
2011-09-19
BCX54 ...- BCX56...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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2011-09-19