BCW60, BCX70
NPN Silicon AF Transistors
• For AF input stages and driver applications
2
3
• High current gain
1
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: BCW61, BCX71 (PNP)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
BCW60B
ABs
1=B
2=E
3=C
SOT23
BCW60C
ACs
1=B
2=E
3=C
SOT23
BCW60D
ADs
1=B
2=E
3=C
SOT23
BCW60FF
AFs
1=B
2=E
3=C
SOT23
BCX70G
AGs
1=B
2=E
3=C
SOT23
BCX70H
AHs
1=B
2=E
3=C
SOT23
BCX70J
AJs
1=B
2=E
3=C
SOT23
BCX70K
AKs
1=B
2=E
3=C
SOT23
1Pb-containing
Pin Configuration
Package
package may be available upon special request
1
2007-04-20
BCW60, BCX70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCW60, ...60FF
32
BCX70
45
Collector-base voltage
Unit
VCBO
BCW60, ...60FF
32
BCX70
45
6
Emitter-base voltage
VEBO
Collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Total power dissipation
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
mA
TS ≤ 71 °C
1For
-65 ... 150
Value
≤ 240
Unit
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
2007-04-20
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BCW60, ...60FF
32
-
-
IC = 10 mA, IB = 0 , BCX70
45
-
-
IC = 10 µA, IE = 0 , BCW60, ...60FF
32
-
-
IC = 10 µA, IE = 0 , BCX70
45
-
-
6
-
-
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
Collector-base cutoff current
ICBO
µA
VCB = 32 V, IE = 0 , BCW60, ...60FF
-
-
0.02
VCB = 45 V, IE = 0 , BCX70
-
-
0.02
VCB = 32 V, IE = 0 , TA = 150 °C, BCW60, ...60FF
-
-
20
VCB = 45 V, IE = 0 , TA = 150 °C, BCX70
-
-
20
-
-
20
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain-
-
hFE
IC = 10 µA, VCE = 5 V, hFE-grp. G
20
140
-
IC = 10 µA, VCE = 5 V, hFE-grp. B/ H
20
200
-
IC = 10 µA, VCE = 5 V, hFE-grp. C/ J/ FF
40
300
-
IC = 10 µA, VCE = 5 V, hFE-grp. D/ K
100
460
-
IC = 2 mA, VCE = 5 V, hFE-grp. G
120
170
220
IC = 2 mA, VCE = 5 V, hFE-grp. B/ H
180
250
310
IC = 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF
250
350
460
IC = 2 mA, VCE = 5 V, hFE-grp. D/ K
380
500
630
IC = 50 mA, VCE = 1 V, hFE-grp. G
50
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. B/ H
70
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF
90
-
-
IC = 50 mA, VCE = 1 V, hFE-grp. D/ K
100
-
-
3
2007-04-20
BCW60, BCX70
DC Electrical Characteristics
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
Collector-emitter saturation voltage1)
V
VCEsat
IC = 10 mA, IB = 0.25 mA
-
0.12
0.25
IC = 50 mA, IB = 1.25 mA
-
0.2
0.55
IC = 10 mA, IB = 0.25 mA
-
0.7
0.85
IC = 50 mA, IB = 1.25 mA
-
0.83
1.05
IC = 10 µA, VCE = 5 V
-
0.52
-
IC = 2 mA, VCE = 5 V
0.58
0.65
0.7
IC = 50 mA, VCE = 1 V
-
0.78
-
Base emitter saturation voltage 1)
VBEsat
Base-emitter voltage1)
1Pulse
VBE(ON)
test: t < 300µs; D < 2%
4
2007-04-20
BCW60, BCX70
AC Characteristics
Transition frequency
fT
-
250
-
MHz
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
-
0.95
-
pF
Ceb
-
9
-
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
h11e
kΩ
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. G
-
2.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/ H
-
3.6
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/ J /FF
-
4.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/ K
-
7.5
-
Open-circuit reverse voltage transf. ratio
10-4
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. G
-
1.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B /H
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/ J/ FF
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/ K
-
3
-
Short-circuit forward current transf. ratio
h21e
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. G
-
200
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/ H
-
260
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/ J/ FF
-
330
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/ K
-
520
-
Open-circuit output admittance
µS
h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. G
-
18
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/ H
-
24
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/ J/ FF
-
30
-
IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/ K
-
50
-
Noise figure
dB
F
IC = 200 µA, VCE = 5 V, f = 1 kHz,
D f = 200 Hz, RS = 2 kΩ, h FE-grp. B - K
-
2
-
-
1
2
-
-
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. FF
Equivalent noise voltage
Vn
0.135 µV
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 10...50 Hz , h FE-grp. FF
5
2007-04-20
BCW60, BCX70
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V
IC = ƒ(VCEsat), hFE = 10
10 3
h FE
BCW 60/BCX 70
5
EHP00334
10 2
ΙC
100 ˚C
BCW 60/BCX 70
EHP00332
mA
100 ˚C
25 ˚C
-50 ˚C
25 ˚C
-50 ˚C
10 2
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
10 -1
10 0
10 1
10 -1
0
mA 10 2
0.1
0.2
0.3
ΙC
Collector current I C = ƒ(V BE)
IC = ƒ(V BEsat), hFE = 40
VCE = 5V
ΙC
BCW 60/BCX 70
EHP00331
mA
10 2
ΙC
100 ˚C
25 ˚C
-50 ˚C
10 1
V
0.5
V CEsat
Base-emitter saturation voltage
10 2
0.4
BCW 60/BCX 70
EHP00333
mA
10 1
5
5
10 0
5
10 0
100 ˚C
10 -1
5
25 ˚C
-50 ˚C
5
10 -1
0
0.2
0.4
0.6
0.8
V
10 -2
1.2
V BE sat
0
0.5
V
1.0
V BE
6
2007-04-20
BCW60, BCX70
Collector cutoff current ICBO = ƒ(TA)
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
VCB = V CEmax
BCW 60/BCX 70
10 4
nA
EHP00335
10 3
BCW 60/BCX 70
EHP00330
MHz
Ι CBO
fT
10 3
max
10 2
10 2
10 1
5
typ
10 0
10 -1
0
50
100
10 1
10 -1
150
˚C
10 0
10 1
10 2
ΙC
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = ƒ(TS)
12
360
mW
pF
10
300
9
270
8
240
Ptot
CCB(CEB )
mA
7
210
6
180
5
150
CEB
4
120
3
90
2
60
1
0
0
30
CCB
4
8
12
16
V
0
0
22
VCB(VEB)
7
15
30
45
60
75
90 105 120
°C 150
TS
2007-04-20
BCW60, BCX70
h parameter he = ƒ(IC) normalized
VCE = 5V
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
BCW 60/BCX 70
EHP00328
Ptot max
5
Ptot DC
D=
tp
T
10 2
tp
he
BCW 60/BCX 70
EHP00336
5
T
h 11e
10
2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10
VCE = 5 V
1
5
h 12e
10 0 h
21e
5
5
h 22e
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 -1
10 -1
10 0
5
10 0
ΙC
tp
h parameter he = ƒ(VCE ) normalized
Noise figure F = ƒ(VCE)
IC = 2mA
IC = 0.2mA, R S = 2kΩ , f = 1kHz
2.0
BCW 60/BCX 70
EHP00337
Ι C = 2 mA
he
10 1
mA
20
F
BCW 60/BCX 70
EHP00338
dB
1.5
h 21e
h 11e
15
1.0
h 12e
10
h 22e
0.5
0
5
0
10
20
V
0
10 -1
30
VCE
10 0
10 1
V
10 2
VCE
8
2007-04-20
BCW60, BCX70
Noise figure F = ƒ(f)
Noise figure F = ƒ(I C)
VCE = 5V, f = 120Hz
VCE = 5V, ZS = ZSopt
20
F
BCW 60/BCX 70
EHP00339
dB
20
F
BCW 60/BCX 70
EHP00340
dB
15
15
10
10
RS = 1 MΩ
100 k Ω
10 k Ω
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
10 -2
10 -1
Noise figure F = ƒ(IC )
Noise figure F = ƒ(I C)
VCE = 5V, f = 10kHz
VCE = 5V, f = 1kHz
F
BCW 60/BCX 70
EHP00341
dB
20
F
15
R S = 1 MΩ
BCW 60/BCX 70
EHP00342
dB
RS = 1 M Ω
15
100 kΩ 10 kΩ
100 k Ω
10
10
10 k Ω
500 Ω
1 kΩ
5
5
1 kΩ
500 Ω
0
10 -3
mA 10 1
ΙC
f
20
10 0
10 -2
10 -1
10 0
0
10 -3
mA 10 1
ΙC
10 -2
10 -1
10 0 mA 10 1
ΙC
9
2007-04-20
Package SOT23
BCW60, BCX70
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
10
2007-04-20
BCW60, BCX70
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11
2007-04-20
