BF799E6327HTSA1

BF799 NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 2 3 • SAW filter driver in TV tuners 1 • Pb-free (RoHS compliant) package Type Marking BF799 LKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 3 Collector current IC 35 Peak collector current, ICM 50 Peak base current IBM 15 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Storage temperature Tstg V mA TS ≤ 69 °C 1) -65 ... 150 Thermal Resistance Junction - soldering point2) 1T RthJS ≤ 290 K/W S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-09-21 BF799 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. V(BR)CEO 20 - - V(BR)CBO 30 - - V(BR)EBO 3 - - ICBO - - 100 DC characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Base-emitter breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current nA VCB = 20 V, IE = 0 DC current gain hFE - IC = 5 mA, VCE = 10 V 35 95 - IC = 20 mA, VCE = 10 V 40 100 250 VCEsat - 0.1 0.3 VBEsat - - 0.95 Collector-emitter saturation voltage V IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA AC characteristics Transition frequency MHz fT IC = 5 mA, VCE = 10 V, f = 100 MHz - 800 - IC = 20 mA, VCE = 8 V, f = 100 MHz - 1100 - Cob - 0.96 - Ccb - 0.7 - Cce - 0.28 - F - 3 - dB g22e - 60 - µS Output capacitance pF VCB = 10 V, IE = 0 mA, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, ZS = 50 Ω Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz 2 2011-09-21 BF799 Total power dissipation P tot = f(TS) 320 mW Ptot 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (t p) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC RthJS K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -3 10 -2 s tp 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 tp 3 2011-09-21 0 BF799 Transition frequency fT = f (IC) Collector-base capacitance Ccb = f (VCB ) f = 100MHz f = 1 MHz 1200 fT BF 799 EHT07116 MHz 1.5 Ccb 1000 BF 799 EHT07117 pF VCE = 5 V 1.0 800 600 2V 0.5 400 200 0 0 10 20 30 0 40 mA 50 ΙC 0 10 V 20 VCB 4 2011-09-21 Package SOT23 BF799 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 1.2 0.9 1.3 0.9 0.8 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2011-09-21 BF799 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-09-21