BFG19SE6327

BFG19S NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunication 4 3 2 systems up to 1.5 GHz at collector currents 1 from 10 mA to 70 mA • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFG19S Marking Pin Configuration BFG19S 1 = E 2 = B 3 = E 4 = C - Package - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 210 Base current IB 21 Total power dissipation2) Ptot 1 W °C V mA TS ≤ 75°C Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 3) RthJS Value Unit ≤ 75 K/W 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 3For calculation of RthJA please refer to Application Note Thermal Resistance 2008-07-10 1 BFG19S Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 70 100 140 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gainIC = 70 mA, VCE = 8 V, pulse measured 2008-07-10 2 BFG19S Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 4 5.5 - Ccb - 0.8 1.1 Cce - 0.4 - Ceb - 4.1 - GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz - 2 - f = 1.8 GHz - 3 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz - 14 - f = 1.8 GHz - 8.5 - Power gain, maximum available1) G ma |S21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 900 MHz - 11 - f = 1.8 GHz - 5.5 - - 32 - Third order intercept point at output IP 3 dBm VCE = 8 V, I C = 70 mA, f = 900 MHz, ZS = ZL = 50Ω 2 1/2 ma = |S21/S 12| (k-(k -1) ) 1G 2008-07-10 3 BFG19S Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 2 1200 mW 1000 K/W RthJS Ptot 900 800 700 10 1 600 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2008-07-10 4 0 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BFG19S 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 2008-07-10 5 BFG19S Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2008-07-10 6