BFG235E6327

BFG235 NPN Silicon RF Transistor* • For low-distortion broadband output amplifier stages in antenna and telecommunication 4 3 2 systems up to 2 GHz at collector currents from 1 120 mA to 250 mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFG235 Marking Pin Configuration BFG235 1 = E 2 = B 3 = E 4 = C - Package - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 300 Base current IB 40 Total power dissipation2) Ptot 2 W °C V mA TS ≤ 80°C Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 1Pb-containing 2T package may be available upon special request S is measured on the collector lead at the soldering point to the pcb 2007-04-20 1 BFG235 Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit ≤ 35 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 15 - - V ICES - - 200 µA ICBO - - 100 nA IEBO - - 2 µA hFE 75 120 160 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 200 mA, VCE = 8 V, pulse measured 1For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-20 2 BFG235 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 4 5.5 - GHz Ccb - 2.2 3 pF Cce - 1.5 - Ceb - 14 - F - 1.7 - G ma - 12.5 - |S21e|2 - 6.5 - dB IP 3 - 33 - dBm IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB IC = 60 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz Power gain, maximum available1) IC = 200 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz Transducer gain IC = 200 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 900 MHz Third order intercept point at output VCE = 8 V, I C = 200 mA, f = 900 MHz, ZS = ZL = 50Ω 2 1/2 ma = |S21/S 12| (k-(k -1) ) 1G 2007-04-20 3 BFG235 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 2 2200 mW K/W 1800 RthJS Ptot 1600 1400 10 1 1200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 1000 800 10 0 600 400 200 0 0 20 40 60 80 100 120 °C 10 -1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2007-04-20 4 0 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BFG235 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 2007-04-20 5 BFG235 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-04-20 6