BFN26E6433HTMA1

BFN26E6433HTMA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT-23

  • 描述:

    TRANS NPN 300V 0.2A SOT-23

  • 数据手册
  • 价格&库存
BFN26E6433HTMA1 数据手册
BFN24, BFN26 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BFN27 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BFN24 FHs 1=B 2=E 3=C SOT23 BFN26 FJs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BFN24 250 BFN26 300 Collector-base voltage Unit VCBO BFN24 250 BFN26 300 6 Emitter-base voltage VEBO Collector current IC 200 Peak collector current, tp ≤ 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg mA TS ≤ 74 °C 1 -65 ... 150 2011-12-19 BFN24, BFN26 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 210 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 , BFN24 250 - - IC = 1 mA, IB = 0 , BFN26 300 - - IC = 100 µA, IE = 0 , BFN24 250 - - IC = 100 µA, IE = 0 , BFN26 300 - - 6 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 100 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 200 V, IE = 0 , BFN24 - - 0.1 VCB = 250 V, IE = 0 , BFN26 - - 0.1 VCB = 200 V, IE = 0 , TA = 150 °C, BFN24 - - 20 VCB = 250 V, IE = 0 , TA = 150 °C, BFN26 - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain2) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V, BFN24 40 - - IC = 30 mA, VCE = 10 V, BFN26 30 - - Collector-emitter saturation voltage2) V VCEsat IC = 20 mA, IB = 2 mA, BFN24 - - 0.4 IC = 20 mA, IB = 2 mA, BFN26 - - 0.5 - - 0.9 Base emitter saturation voltage2) VBEsat IC = 20 mA, IB = 2 mA 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2011-12-19 BFN24, BFN26 Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 70 - MHz Ccb - 1.5 - pF AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 3 2011-12-19 BFN24, BFN26 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range IC = ƒ(VCEO) TA = 25°C, D = 0 BFN 24/26 10 3 EHP00627 mA 5 h FE 10 µs 2 10 2 IC 10 2 100 µs 5 10 1 1 ms 2 DC 10 1 10 0 5 2 10 0 -1 10 5 10 0 5 10 1 2 5 10 ΙC mA 10 Collector current IC = ƒ(VBE ) BFN 24/26 10 1 10 2 V 10 3 VCE Collector cutoff current ICBO = ƒ(TA) VCB = 200 V VCE = 10 V 10 3 10 -1 0 10 3 EHP00625 10 4 nA mA ΙC Ι CB0 10 2 BFN 24/26 EHP00626 max 10 3 5 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0 0.5 V 1.0 10 -1 1.5 V BE 0 50 ˚C 150 100 TA 4 2011-12-19 BFN24, BFN26 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 BFN 24/26 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00622 90 pF MHz CCB(CEB ) fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 4 8 12 16 Permissible Pulse Load RthJS = ƒ(tp) 10 3 400 K/W mW 10 2 RthJS Ptot 300 250 10 1 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 150 10 0 100 50 0 0 22 VCB(VEB ΙC Total power dissipation P tot = ƒ(TS) V 15 30 45 60 75 90 105 120 °C TS 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-12-19 BFN24, BFN26 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 3 BFN 24/26 Ptot max 5 Ptot DC EHP00623 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-12-19 Package SOT23 BFN24, BFN26 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 7 2011-12-19 BFN24, BFN26 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-12-19
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