BFP420H6327XTSA1

BFP420 Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers 3 • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz 2 4 Outstanding G ms = 21 dB at 1.8 GHz 1 • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP420 Marking AMs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 4.5 TA = -55 °C 4.1 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 60 Base current IB 9 Total power dissipation1) Ptot 210 mW Junction temperature TJ 150 °C Storage temperature TStg mA TS ≤ 98 °C 1T S is -55 ... 150 measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1 Value Unit 250 K/W 2013-09-19 BFP420 Electrical Characteristics at T A = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 4.5 5 - V ICES - - 10 μA ICBO - - 100 nA IEBO - - 3 μA hFE 60 95 130 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 4 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-19 BFP420 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 18 25 - Ccb - 0.15 0.3 Cce - 0.37 - Ceb - 0.55 - NFmin - 1.1 - dB Gms - 21 - dB 14 17 - IP3 - 22 - P-1dB - 12 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21|2 Insertion power gain VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output2) dBm VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G ms = |S21 / S12 | value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 2IP3 3 2013-09-19 BFP420 Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 240 mW K/W RthJS Ptot 180 150 10 2 120 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 90 60 30 0 0 30 60 °C 90 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 tp Permissible Pulse Load Collector-base capacitance Ccb = ƒ(VCB ) Ptotmax/PtotDC = ƒ(tp ) f = 1MHz 10 1 0.3 Ccb P totmax/PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 1 2 V 4 VCB 4 2013-09-19 0 BFP420 Transition frequency fT= ƒ(IC) Power gain Gma, Gms, |S21|² = ƒ (f) f = 2 GHz VCE = 2 V, IC = 20 mA VCE = parameter in V 30 GHz 44 2 to 4 40 1.5 24 1 36 0.75 32 22 fT 20 Gms 18 28 G [dB] 16 14 20 0.5 12 24 Gma 10 16 2 |S21| 8 12 6 8 4 2 4 0 0 5 10 15 20 25 30 mA 40 0 0 IC 1 2 3 4 5 6 f [GHz] Power gain Gma, Gms = ƒ (IC) VCE = 2V Power gain Gma, Gms = ƒ (VCE ) IC = 20 mA f = parameter in GHz f = parameter in GHz 30 dB 30 dB 0.9 0.9 24 24 22 22 1.8 18 2.4 16 3 14 4 12 5 10 6 16 3 14 4 12 5 10 6 8 6 6 4 4 2 2 4 8 12 16 20 24 28 32 mA 0 0 40 IC 2.4 18 8 0 0 1.8 20 G G 20 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 5 2013-09-19 BFP420 Noise figure F = ƒ(IC ) VCE = 2 V, ZS = ZSopt Noise figure F = ƒ(IC ) VCE = 2 V, f = 1.8 GHz 4 3 dB dB 3 F F 2 2.5 2 1.5 ZS = 50 Ohm ZS = ZSopt 1.5 1 0.5 0 0 1 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 4 8 12 16 20 24 28 0.5 0 0 32 mA 38 4 8 12 16 20 28 mA 24 IC 36 IC Noise figure F = ƒ(f) Source impedance for min. VCE = 2 V, ZS = ZSopt noise figure vs. frequency VCE = 2 V, IC = 5 mA / 20 mA 3 +j50 dB +j25 +j100 +j10 2 F 2.4GHz 1.8GHz 0.9GHz 3GHz 0 1.5 10 25 50 100 0.45GHz 4GHz 1 5GHz IC = 20 mA IC = 5 mA -j10 6GHz 0.5 -j25 -j100 -j50 0 0 1 2 3 4 GHz 6 f 6 2013-09-19 BFP420 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP420 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 7 2013-09-19 Package SOT343 8 BFP420 2013-09-19 BFP420 Edition 2009-12-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2009. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2013-09-19