BFP520FH6327XTSA1

BFP520F Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 Outstanding Gms = 22.5 dB at 1.8 GHz 2 4 1 Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520F Marking APs 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 2.5 TA = -55 °C 2.4 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 50 Base current IB 5 Total power dissipation1) Ptot 120 mW Junction temperature TJ 150 °C Storage temperature TStg mA TS ≤ 98 °C 1T -55 ... 150 S is measured on the emitter lead at the soldering point to pcb Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1 Value Unit 430 K/W 2013-09-19 BFP520F Electrical Characteristics at T A = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 2.5 3 3.5 V ICES - - 10 µA ICBO - - 200 mA IEBO - - 35 µA hFE 70 110 170 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-19 BFP520F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 32 45 - Ccb - 0.07 0.14 Cce - 0.25 - Ceb - 0.31 - NFmin - 0.95 - dB Gms - 22.5 - dB |S21|2 - 20.5 - IP3 - 23.5 - P-1dB - 10.5 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output dBm VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt 1dB compression point IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz 1G ms = |S 21 / S12 | 3 2013-09-19 BFP520F Total power dissipation P tot = ƒ(TS) 130 mW 110 100 Ptot 90 80 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS 4 2013-09-19 Package TSFP-4 5 BFP520F 2013-09-19 BFP520F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-09-19