BFP640
NPN Silicon Germanium RF Transistor
3
4
BFP640E/L6327 and E/L7764
• High gain low noise RF transistor
• Provides outstanding performance
2
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
1
VPS05605
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT -Silicon Germanium technology
• L6327 and L7764 are early Pb-free
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP640
Marking
R4s
1=B
Pin Configuration
2=E
3=C
4=E
-
Package
-
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
4
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
50
Base current
IB
3
Total power dissipation1)
Ptot
200
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
V
mA
TS ≤ 90°C
1T is measured on the collector lead at the soldering point to the pcb
S
1
Mar-01-2004
BFP640
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 1)
RthJS
≤ 300
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)CEO
4
4.5
-
V
ICES
-
-
30
µA
ICBO
-
-
100
nA
IEBO
-
-
3
µA
hFE
100
180
320
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
-
IC = 30 mA, VCE = 3 V
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Mar-01-2004
BFP640
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
30
40
-
Ccb
-
0.09
0.2
Cce
-
0.23
-
Ceb
-
0.5
-
GHz
IC = 30 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 3 V, f = 1 MHz
Collector emitter capacitance
VCE = 3 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
-
0.65
-
IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
-
1.3
-
G ms
-
24
-
dB
G ma
-
12.5
-
dB
Power gain, maximum stable1)
IC = 30 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 30 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
|S21e|2
Transducer gain
IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
dB
-
21
-
-
10.5
-
IP 3
-
26.5
-
P-1dB
-
13
-
IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 6 GHz
Third order intercept point at output2)
dBm
VCE = 3 V, I C = 30 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
1dB Compression point at output
IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
1G
1/2
ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
Mar-01-2004
BFP640
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
0.22
1000
2
2
1.8
2.707
227.6
1.8
0.4
0.6
0.2
0.27
3
fA
V
V
Ω
fF
ps
A
V
ns
-
2
-0.0065
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
TITF2
450
0.15
55
3.8
3.129
0.6
0.8
10
0
0.5
93.4
-1.42
0.8
7.291E-11
1.0E-5
A
mA
Ω
V
deg
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.025
21
1
400
1.522
3.061
0.3
1.5
67.43
1
0.6
1.078
298
fA
fA
mA
Ω
V
fF
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
R C B S
C B C C
L C C
C
B F P 6 4 0 _ C h ip
S
B
B
L B B
L B C
C B E C
R C C S
E
L C B
R C E S
L E C
C B E I
C C E I
L E B
C C E O
C B E O
T =
2 5 °C
Itf = 4 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
C
LBC =
LCC =
LEC =
LBB =
LCB =
LEB =
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
CBEO =
CCEI =
CBEI =
RBS =
RCS =
RES =
120
120
20
696.2
682.4
230.6
98.4
55.9
180
79
75
131.2
102.5
112.6
180.4
1200
1200
300
pH
pH
pH
pH
pH
pH
fF
fF
fF
fF
fF
fF
fF
fF
fF
Ω
Ω
Ω
Valid up to 6GHz
4
Mar-01-2004
BFP640
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
220
mW
180
K/W
RthJS
Ptot
160
140
120
10 2
100
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
80
60
40
20
0
0
15
30
45
60
75
90 105 120 °C
10 1 -7
10
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
TS
10
0
tp
Permissible Pulse Load
Collector-base capacitance Ccb= ƒ(VCB)
Ptotmax/P totDC = ƒ(tp)
f = 1MHz
10 1
Ptotmax /PtotDC
0.25
pF
-
CCB
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.15
0.1
0.05
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
tp
2
4
6
8
10
V
14
VCB
5
Mar-01-2004
BFP640
Third order Intercept Point IP3=ƒ(IC)
Transition frequency fT= ƒ(IC)
(Output, ZS=ZL=50Ω)
f = 1GHz
VCE = parameter, f = 1.8 GHz
VCE = parameter
30
45
dBm
GHz
24
4V
30
18
fT
IP3
21
25
3V
15
2V
20
2V
12
15
9
10
6
1V
5
3
0
0
3V
35
0.5V
10
20
30
40
mA
0
0
60
10
20
30
40
mA
IC
IC
Power gain Gma, Gms = ƒ(IC)
Power Gain Gma, Gms = ƒ(f),
VCE = 3V
|S21|² = f (f)
f = parameter
VCE = 3V, IC = 30mA
30
55
dB
0.9GHz
dB
26
45
24
1.8GHz
22
40
G
G
60
35
20
2.4GHz
18
3GHz
25
16
4GHz
20
14
5GHz
12
10
0
Gms
30
20
30
40
mA
Gma
15
6GHz
10
|S21|²
10
0
60
IC
1
2
3
4
GHz
6
f
6
Mar-01-2004
BFP640
Power gain Gma, Gms = ƒ (VCE)
Noise figure F = ƒ(I C)
IC = 30mA
VCE = 3V, ZS = ZSopt
f = parameter
30
2.4
0.9GHz
2.2
dB
2
1.8GHz
1.8
2.4GHz
20
1.6
G
3GHz
1.4
F [dB]
4GHz
15
5GHz
6GHz
1.2
1
10
f = 6GHz
0.8
f = 5GHz
f = 4GHz
0.6
5
f = 3GHz
0.4
f = 2.4GHz
f = 1.8GHz
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0
0
VCE
10
20
30
40
50
I [mA]
c
Noise figure F = ƒ(f)
VCE = 3V, ZS = Z Sopt
2
2
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
F [dB]
F [dB]
Noise figure F = ƒ(IC )
VCE = 3V, f = 1.8 GHz
f = 0.9GHz
1
1
Z = 50Ω
S
0.8
0.8
IC = 30mA
Z =Z
S
Sopt
0.6
0.6
0.4
0.4
0.2
0.2
0
IC = 5.0mA
0
0
10
20
30
40
50
0
I [mA]
1
2
3
4
5
6
7
f [GHz]
c
7
Mar-01-2004
BFP640
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, I C = 5 mA/ 30 mA
1
1.5
2
0.5
0.4
3
0.3
4
I = 5.0mA
0.2
2.4GHz
0.1
1.8GHz
3GHz
0.1
0
5
c
0.2 0.3 0.4 0.5 4GHz
10
0.9GHz
1
1.5
2
3
4 5
5GHz
−0.1
−10
6GHz
−0.2
−5
−4
−0.3
−0.4
−3
I = 30mA
c
−0.5
−2
−1.5
−1
8
Mar-01-2004
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
