BFP650

BFP650 High linearity wideband silicon NPN RF bipolar transistor Product description The BFP650 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its transition frequency fT of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 5 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 1 dB at 2.4 GHz, 3 V, 30 mA High gain Gma = 17.5 dB at 2.4 GHz, 3 V, 70 mA OIP3 = 30 dBm at 2.4 GHz, 3 V, 70 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Low noise, high linearity amplifiers in SDARS receivers Low noise, high linearity amplifiers for ISM band applications Low noise, high linearity amplifiers for multimedia applications such as CATV Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP650 / BFP650H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel R5s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.0 3.7 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 10 Collector current IC 150 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 500 mW TS ≤ 78 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point Values RthJS Min. Typ. Max. – 140 – Unit Note or test condition K/W – 600 500 Ptot [mW] 400 300 200 100 0 0 50 100 150 Ts [°C] Figure 1 Datasheet Total power dissipation Ptot = f(Ts) 4 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4 4.5 – V IC = 3 mA, IB = 0, open base Collector emitter leakage current ICES – 0.1 1 2) μA VCE = 13 V, VBE = 0, E-B short circuited 1 40 2) nA VCE = 5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 1 40 2) VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 500 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 170 250 VCE = 3 V, IC = 5 mA, pulse measured 100 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Transition frequency fT 31 42 – GHz VCE = 3 V, IC = 70 mA, f = 1 GHz Collector base capacitance CCB – 0.26 0.4 pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.45 – Emitter base capacitance CEB 1.3 2 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.75 32 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 29.5 16.5 Datasheet – Typ. 6 38 37.5 Unit Note or test condition Max. – dB IC = 70 mA IC = 30 mA dBm IC = 70 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.75 29.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 30 16.5 Table 8 – Typ. Symbol Max. – dB IC = 70 mA IC = 30 mA dBm Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 26.5 24 Unit IC = 70 mA, ZS = ZL = 50 Ω Note or test condition Max. – dB 0.8 24.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB IC = 70 mA IC = 30 mA dBm 31 17 IC = 70 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 22.5 19.5 Unit 31 17 7 Note or test condition Max. – dB 0.85 20.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet Note or test condition AC characteristics, VCE = 3 V, f = 900 MHz Parameter Table 9 31.5 29.5 Unit IC = 70 mA IC = 30 mA dBm IC = 70 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.95 17.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 30.5 17 Table 11 – Typ. 20 17.5 Symbol Max. – dB IC = 70 mA IC = 30 mA dBm Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1 15 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 30 17 IC = 70 mA, ZS = ZL = 50 Ω 17.5 15 Unit Note or test condition Max. – dB IC = 70 mA IC = 30 mA dBm IC = 70 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Typ. 14.5 11.5 Unit 30 17 8 Note or test condition Max. – dB 1.2 11.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet Note or test condition AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Table 12 Unit IC = 70 mA IC = 30 mA dBm IC = 70 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Datasheet 10.5 7 29.5 16.5 Note or test condition Max. – dB 1.6 8.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Note: Typ. Unit IC = 70 mA IC = 30 mA dBm IC = 70 mA, ZS = ZL = 50 Ω Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 160 140 940µA 810µA 120 690µA 575µA 460µA 80 I C [mA] 100 350µA 60 260µA 40 160µA 80µA 20 0 18µA 0 1 2 3 4 5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 120 110 100 hFE 90 80 70 60 50 0.1 1 10 100 1000 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 10 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1000 100 IC [mA] 10 1 0.1 0.01 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE [V] Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V Figure 5 10 1 IB [mA] 0.1 0.01 0.001 0.0001 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE [V] Figure 6 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 11 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1.E-05 IB[A] 1.E-06 1.E-07 1.E-08 1.E-09 0.8 1 1.2 1.4 1.6 1.8 2 VEB[V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 12 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 45 4.00V 40 35 fT [GHz] 30 3.00V 25 2.50V 20 15 2.00V 10 5 0 Figure 8 1.00V 0 20 40 60 80 100 IC [mA] 120 140 160 180 160 180 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 32 30 OIP3 [dBm] 28 3V, 2.4GHz 4V, 2.4GHz 3V, 3.5GHz 4V, 3.5GHz 26 24 22 20 18 0 20 40 60 80 100 I [mA] 120 140 C Figure 9 Datasheet 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters 13 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 0.6 0.5 CCB [pF] 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 V CB Figure 10 2.5 3 3.5 4 9 10 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 42 39 36 33 Gms 30 G [dB] 27 24 21 G ma 18 15 12 |S |2 21 9 6 3 0 Figure 11 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 70 mA 14 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 42 39 0.15GHz 36 33 0.45GHz 30 G [dB] 27 0.90GHz 24 21 1.50GHz 1.90GHz 2.40GHz 18 15 3.50GHz 12 9 5.50GHz 6 10.00GHz 3 0 Figure 12 0 20 40 60 80 100 IC [mA] 120 140 160 180 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 42 39 0.15GHz 36 33 0.45GHz 30 G [dB] 27 0.90GHz 24 1.50GHz 21 18 1.90GHz 2.40GHz 15 3.50GHz 12 5.50GHz 9 10.00GHz 6 3 0 0.5 Figure 13 Datasheet 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum power gain Gmax = f(VCE), IC = 70 mA, f = parameter in GHz 15 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 6 0.4 8 7 9 2 10 5 0.3 3 4 4 3 0.2 5 0.03 to 10 GHz 2 0.1 0.1 0 10 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 1 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 70 mA 30 mA −1 Figure 14 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 30 / 70 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.1 10 0.45GHz 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.9GHz −0.1 −10 1.9GHz 2.4GHz −0.2 3.5GHz −0.3 I = 30mA c −5 −4 Ic= 70mA −3 −0.4 −0.5 −2 −1.5 −1 Figure 15 Datasheet Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 30 / 70 mA 16 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 9 0.3 3 6 4 5 0.2 5 4 0.03 to 10 GHz 3 0.1 0.1 0 10 8 7 10 2 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 1 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 70 mA 30 mA −1 Figure 16 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 30 / 70 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 I = 70mA C 0.8 I = 30mA C 0.6 0.4 0.2 0 Figure 17 Datasheet 0 0.5 1 1.5 2 f [GHz] 2.5 3 3.5 4 Noise figure NFmin = f(f), ZS = ZS,opt, VCE = 3 V, IC = 30 / 70 mA 17 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 f = 3.5GHz 0.8 f = 2.4GHz f = 1.9GHz 0.6 f = 0.9GHz 0.4 f = 0.45GHz 0.2 0 0 20 40 60 80 100 Ic [mA] Figure 18 Noise figure NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = parameter in GHz 3 2.8 2.6 2.4 NF50 [dB] 2.2 2 1.8 1.6 f = 3.5GHz 1.4 f = 2.4GHz 1.2 f = 1.9GHz 1 0.8 f = 0.9GHz 0.6 f = 0.45GHz 0.4 0 20 40 60 80 100 Ic [mA] Figure 19 Datasheet Noise figure NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = parameter in GHz 18 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Electrical characteristics 3 2.8 2.6 2.4 2.2 NF [dB] 2 1.8 1.6 1.4 1.2 1 Z = 50Ω S 0.8 Z =Z S Sopt 0.6 0.4 0 20 40 60 80 100 Ic [mA] Figure 20 Note: Datasheet Noise figure NF50 = f(IC), ZS = 50 Ω, NFmin = f(IC), ZS = ZS,opt, VCE = 3 V, f = 2.4 GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 19 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 21 Package outline Figure 22 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 23 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 24 Datasheet 1.1 ] Tape dimensions 20 Revision 2.0 2019-01-25 BFP650 High linearity wideband silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 21 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-aqy1526270604395 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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