BFP740ESDH6327XTSA1

BFP740ESD SiGe:C NPN RF bipolar transistor Product description The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list • • • • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3 V, 25 mA OIP3 = 22 dBm at 5.5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin Configuration BFP740ESD / BFP740ESDH6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel T7s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector base voltage 1) Collector emitter voltage 2) VCEO – VCBO VCES Unit Note or test condition V Open base Max. 4.2 3.7 TA = -55 °C, open base 4.9 Open emitter 4.4 TA = -55 °C, open emitter 4.2 E-B short circuited 3.7 TA = -55 °C, E-B short circuited Base current 3) IB -10 5 Collector current IC – 45 RF input power PRFin – 21 dBm ESD stress pulse 4) VESD -2 2 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation5) Ptot – 160 mW TS ≤ 98 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 mA – Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 4 5 Low VCBO due to design. VCES is similar to VCEO due to design. Sustainable reverse bias current is high due to design ESD robustness is high due to design TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 325 – Unit Note or test condition K/W – 180 160 140 Ptot [mW] 120 100 80 60 40 20 0 0 25 50 75 T [°C] 100 125 150 S Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – Collector emitter leakage current ICES – – 400 1) nA VCE = 2 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 2 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 250 μA 400 Values Min. Typ. Max. – 45 – VEB = 0.5 V, IC = 0, open collector VCE = 3 V, IC = 25 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 25 mA, f = 2 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.08 Collector emitter capacitance CCE 0.45 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.55 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded 1 Maximum values not limited by the device but by the short cycle time of the 100% test Datasheet 5 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass Note or test condition Max. dB – 38.5 34 – IC = 25 mA 0.55 30.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet Typ. Unit IC = 6 mA dBm 23.5 9 6 ZS = ZL = 50 Ω, IC = 25 mA v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 28.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 23.5 9.5 Table 8 Max. dB – Symbol 33.5 32 – IC = 25 mA IC = 6 mA Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass dBm ZS = ZL = 50 Ω, IC = 25 mA Unit Note or test condition Typ. Max. dB – 30.5 29 – IC = 25 mA 0.55 25.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB IC = 6 mA dBm ZS = ZL = 50 Ω, IC = 25 mA Unit Note or test condition 24 9.5 AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass Typ. Max. dB – 28 25.5 – IC = 25 mA 0.6 23 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet Note or test condition AC characteristics, VCE = 3 V, f = 900 MHz Parameter Table 9 Unit IC = 6 mA dBm 24.5 10 7 ZS = ZL = 50 Ω, IC = 25 mA v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.6 21 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 25 10 Table 11 Max. dB – 26.5 24 Symbol – IC = 25 mA IC = 6 mA Values Min. Typ. – 25.5 22 Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.65 20 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 25 10.5 dBm ZS = ZL = 50 Ω, IC = 25 mA Unit Note or test condition Max. dB – IC = 25 mA IC = 6 mA dBm ZS = ZL = 50 Ω, IC = 25 mA Unit Note or test condition AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.7 16.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 10.5 Datasheet Note or test condition AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Table 12 Unit Max. dB – 23 19 – IC = 25 mA IC = 6 mA dBm 8 ZS = ZL = 50 Ω, IC = 25 mA v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – 18.5 14.5 – IC = 25 mA 0.9 13.5 IC = 6 mA dBm ZS = ZL = 50 Ω, IC = 25 mA Unit Note or test condition 22 10 Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.8 8.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 21 7.5 Datasheet Max. AC characteristics, VCE = 3 V, f = 10 GHz Parameter Note: Note or test condition dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 14 Typ. Unit – 14.5 7.5 Max. dB – IC = 25 mA IC = 6 mA dBm ZS = ZL = 50 Ω, IC = 25 mA Gms = IS21 / S12 I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 50 IB = 225µA IB = 205µA IB = 185µA IB = 165µA IB = 145µA IB = 125µA IB = 105µA 40 IC [mA] 30 IB = 85µA 20 IB = 65µA IB = 45µA 10 IB = 25µA IB = 5µA 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter hFE 1000 100 0.1 1 10 100 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 10 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 100 10 IC [mA] 1 0.1 0.01 0.001 0.0001 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5 Collector current vs. base emitter voltage IC = f(VBE), VCE = 2 V 1 0.1 IB[mA] 0.01 0.001 0.0001 0.00001 0.5 0.6 0.7 0.8 0.9 VBE[V] Figure 6 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 11 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1.E-04 1.E-05 1.E-06 IB[A] 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 0.3 0.4 0.5 0.6 0.7 0.8 VEB[V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 12 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 50 3 to 4V 45 2.5V 40 2V 35 fT [GHz] 30 25 20 15 10 1V 5 0 0 5 10 15 20 I [mA] 25 30 35 40 C Figure 8 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 30 25 OIP3 [dBm] 20 15 10 2V, 2.4GHz 3V, 2.4GHz 2V, 5.5GHz 3V, 5.5GHz 5 0 −5 0 5 10 15 20 I [mA] 25 30 35 C Figure 9 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters Datasheet 13 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 0.2 0.18 0.16 0.14 Ccb [pF] 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 V CB Figure 10 2.5 3 3.5 4 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 50 45 40 35 G ms G [dB] 30 25 Gms Gma 20 2 |S21| 15 10 5 0 Figure 11 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 25 mA 14 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 42 0.15GHz 39 36 0.45GHz 33 0.90GHz G [dB] 30 1.50GHz 1.90GHz 2.40GHz 27 24 3.50GHz 21 5.50GHz 18 15 10.00GHz 12 9 0 5 10 15 20 25 I [mA] 30 35 40 45 C Figure 12 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 42 0.15GHz 39 36 0.45GHz 33 0.90GHz G [dB] 30 1.50GHz 1.90GHz 2.40GHz 3.50GHz 27 24 21 18 5.50GHz 15 10.00GHz 12 9 0 1 2 3 V CE Figure 13 Datasheet 4 5 [V] Maximum power gain Gmax = f(VCE), IC = 25 mA, f = parameter in GHz 15 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 10 0.5 0.4 8 0.3 7 6 0.2 2 10 9 3 7 6 4 5 5 4 5 0.1 9 8 10 0.03 to 10 GHz 3 0.2 40.3 0.4 0.5 0.1 0 1 1.5 2 3 4 5 2 −0.1 −10 3 −0.2 −5 −4 1 −0.3 −3 2 −0.4 1 −0.5 −2 −1.5 25 mA 6 mA −1 Figure 14 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 25 mA 1 1.5 0.5 2 0.4 0.3 3 1.9GHz 2.4GHz 0.2 4 5 0.9GHz 0.45GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 4 5 Ic = 6.0mA 5.5GHz −0.1 3 10 −10 I = 25mA c −0.2 −5 −4 −0.3 −3 −0.4 −0.5 10GHz −2 −1.5 −1 Figure 15 Datasheet Source impedance for minimum noise figure Zopt = f(f), VCE = 3 V, IC = 6 / 25 mA 16 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 0.3 10 0.2 4 5 9 9 0.1 3 10 8 8 7 0.2 0.3 0.4 0.5 0.1 0 6 1 2 3 4 5 4 5 −10 3 2 4 −0.2 1.5 5 6 −0.1 10 0.03 to 10 GHz 7 −5 −4 1 3 1 −0.3 2 −3 −0.4 −0.5 −2 −1.5 25 mA 6 mA −1 Figure 16 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 25 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 0.4 I = 25mA C IC = 6.0mA 0.2 0 0 2 4 6 8 10 f [GHz] Figure 17 Datasheet Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 6 / 25 mA 17 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 2.8 2.6 2.4 2.2 NFmin [dB] 2 1.8 1.6 1.4 1.2 1 0.8 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz f = 0.45GHz 0.6 0.4 0.2 0 Figure 18 0 5 10 15 Ic [mA] 20 25 30 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz 5 4.5 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz f = 0.45GHz 4 NF50 [dB] 3.5 3 2.5 2 1.5 1 0.5 0 Figure 19 Note: Datasheet 0 5 10 15 Ic [mA] 20 25 30 Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 20 Package outline Figure 21 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 22 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 23 Datasheet 1.1 ] Tape dimensions 19 v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-dex1518081280455 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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