BFP740FESDH6327XTSA1

BFP740FESD SiGe:C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list • • • • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3 V, 25 mA OIP3 = 23.5 dBm at 5.5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • Wireless communications: WLAN, WiMax, UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package BFP740FESD / BFP740FESDH6327XTSA1 TSFP-4-1 Pin configuration 1=B 2=E 3=C 4=E Marking Pieces / Reel T7s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector base voltage 1) Collector emitter voltage 2) VCEO – VCBO VCES Unit Note or test condition V Open base Max. 4.2 3.7 TA = -55 °C, open base 4.9 Open emitter 4.4 TA = -55 °C, open emitter 4.2 E-B short circuited 3.7 TA = -55 °C, E-B short circuited Base current 3) IB -10 5 Collector current IC – 45 RF input power PRFin ESD stress pulse 4) VESD Total power dissipation 5) Ptot Junction temperature TJ Storage temperature TStg mA 21 dBm -2 2 kV HBM, all pins, acc. to JESD22-A114 – 160 mW TS ≤ 100 °C 150 °C -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 4 5 Low VCBO due to design. VCES is similar to VCEO due to design. Sustainable reverse bias current is high due to integrated protection circuits. ESD robustness is high due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Unit Min. Typ. Max. – 315 – Note or test condition K/W 180 160 140 Ptot [mW] 120 100 80 60 40 20 0 0 25 50 75 T [°C] 100 125 150 S Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – Collector emitter leakage current ICES – – 400 1) nA VCE = 2 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 2 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 250 μA 400 Values Min. Typ. Max. – 47 – VEB = 0.5 V, IC = 0, open collector VCE = 3 V, IC = 25 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 25 mA, f = 1 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.08 Collector emitter capacitance CCE 0.4 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.5 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded 1 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet Typ. Unit Max. – dB 39 34 IC = 25 mA 0.5 31 IC = 6 mA dBm 23.5 10 6 Note or test condition ZS = ZL = 50 Ω, IC = 25 mA v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 34 32.5 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 29 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 8 – dB dBm 23.5 10 ZS = ZL = 50 Ω, IC = 25 mA AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 30.5 29.5 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 26.5 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 9 – dB dBm 24 10 ZS = ZL = 50 Ω, IC = 25 mA AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 28 26 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 24 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet – dB dBm 24 10 7 ZS = ZL = 50 Ω, IC = 25 mA v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 27 24.5 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 22 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 10 Table 11 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 25 mA AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 26 22.5 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.6 20.5 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 10 Table 12 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 25 mA AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 24 19.5 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.65 17 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 10 Datasheet – Unit – dB dBm 8 ZS = ZL = 50 Ω, IC = 25 mA v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 20.5 15.5 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.8 14.5 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 23.5 10 Table 14 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 25 mA AC characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 14 9 IC = 25 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.45 9 IC = 6 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Note: Datasheet – dB dBm 21 8 ZS = ZL = 50 Ω, IC = 25 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 50 IB = 225µA IB = 205µA IB = 185µA IB = 165µA IB = 145µA IB = 125µA IB = 105µA 40 IC [mA] 30 IB = 85µA 20 IB = 65µA IB = 45µA 10 IB = 25µA IB = 5µA 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter hFE 1000 100 0.1 1 10 100 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 10 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 100 10 IC [mA] 1 0.1 0.01 0.001 0.0001 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5 Collector current vs. base emitter voltage IC = f(VBE), VCE = 2 V 1 0.1 IB [mA] 0.01 0.001 0.0001 0.00001 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 6 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 11 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1.E-04 1.E-05 IB [A] 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 0.3 0.4 0.5 0.6 0.7 0.8 VEB [V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 12 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 50 4.00V 3.00V 2.50V 45 40 2.00V 30 25 T f [GHz] 35 20 15 10 1.00V 5 0 0 5 10 15 20 I [mA] 25 30 35 40 C Figure 8 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 30 25 OIP3 [dBm] 20 15 10 2V, 2.4GHz 3V, 2.4GHz 2V, 5.5GHz 3V, 5.5GHz 5 0 −5 0 5 10 15 20 I [mA] 25 30 35 C Figure 9 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters Datasheet 13 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 0.2 0.18 0.16 0.14 Ccb [pF] 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 V CB Figure 10 2.5 3 3.5 4 9 10 [V] Collector base capacitance CCB = f(VCB), f = 1 MHz 50 45 40 35 G [dB] 30 Gms 25 Gma 20 2 |S | 21 15 10 5 0 Figure 11 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 25 mA 14 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 44 41 0.15GHz G [dB] 38 35 0.45GHz 32 0.90GHz 29 1.50GHz 1.90GHz 2.40GHz 3.50GHz 26 23 5.50GHz 20 17 10.00GHz 14 11 8 5 0 5 10 15 20 25 I [mA] 30 35 40 45 C Figure 12 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 44 41 0.15GHz 38 35 0.45GHz 32 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz G [dB] 29 26 23 5.50GHz 20 17 10.00GHz 14 11 8 5 0 1 2 3 V CE Figure 13 Datasheet 4 5 [V] Maximum power gain Gmax = f(VCE), IC = 25 mA, f = parameter in GHz 15 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor 2 0.6 1 0.8 Electrical characteristics 10 GHz 3 0. 4 4 0.2 5 10 10 3 4 5 2 1 0.8 0.6 0 0.2 0.4 10 MHz -10 -4 -5 2 -0. -3 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 25 mA 2 0.6 1 0.8 Figure 14 Ic = 6 mA Ic = 25 mA -1 Step 1 GHz -0.8 -0. 6 -2 .4 -0 0. 4 3 4 5 0.2 2.4 GHz 10 3 4 5 2 1 0.8 0.6 0.4 10 0 0.2 5.5 GHz 0.45 GHz -10 10 GHz -4 -5 -3 2 -0. Figure 15 Datasheet -1 -0.8 -0. 6 -2 .4 -0 Ic = 6 mA Ic = 25 mA Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 6 / 25 mA 16 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor 2 0.6 1 0.8 Electrical characteristics 0. 4 3 4 5 0.2 10 GHz 10 3 4 5 2 1 0.8 0.6 10 0 0.2 0.4 10 MHz -10 -4 -5 -0.2 -3 Figure 16 Ic = 6mA Ic = 25mA -1 Step 1 GHz -0.8 -0. 6 -2 .4 -0 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 25 mA 2 1.8 1.6 1.4 F [dB] 1.2 1 0.8 0.6 I = 25mA C IC = 6.0mA 0.4 0.2 0 0 2 4 6 8 10 f [GHz] Figure 17 Datasheet Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 6 / 25 mA 17 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 2.8 2.6 f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz 2.4 2.2 2 F [dB] 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 Ic [mA] 25 30 35 Figure 18 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz Figure 19 Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz Note: Datasheet The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Package information TSFP-4-1 4 Package information TSFP-4-1 Figure 20 Package outline Figure 21 Foot print Figure 22 Marking layout example Figure 23 Tape dimensions Datasheet 19 v2.0 2018-09-26 BFP740FESD SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-bek1518705254823 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury