BFP740F
SiGe:C NPN RF bipolar transistor
Product description
The BFP740F is a wideband NPN RF heterojunction bipolar transistor (HBT).
Feature list
•
•
•
Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA
High gain Gms = 21 dB at 5.5 GHz, 3 V, 15 mA
OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
•
•
Wireless communications: WLAN, WiMax and UWB
Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite
radio (SDARs, DAB) and C-band LNB
Multimedia applications such as portable TV, CATV and FM radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
BFP740F / BFP740FH6327XTSA1
TSFP-4-1
1=B
2=E
3=C
4=E
Marking
Pieces / Reel
R7s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v3.0
2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
3.4
3.5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Datasheet
2
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2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
VCEO
–
Unit
Note or test condition
V
Open base
Max.
4.0
3.5
TA = -55 °C, open base
Collector emitter voltage
VCES
13
E-B short circuited
Collector base voltage
VCBO
13
Open emitter
Emitter base voltage
VEBO
1.2
Open collector
Base current
IB
4
Collector current
IC
45
Total power dissipation 1)
Ptot
Junction temperature
TJ
Storage temperature
TStg
mA
–
160
mW
TS ≤ 102 °C
150
°C
–
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
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BFP740F
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
300
–
Unit
Note or test condition
K/W
–
180
160
140
Ptot [mW]
120
100
80
60
40
20
0
Figure 1
Datasheet
0
25
50
75
TS [°C]
100
125
150
Total power dissipation Ptot = f(TS)
4
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
V
IC = 1 mA, IB = 0,
open base
Collector emitter breakdown voltage
V(BR)CEO
4.0
4.7
–
Collector emitter leakage current
ICES
–
1
1
400 1) nA
40 1)
VCE = 13 V, VBE = 0
VCE = 5 V, VBE = 0,
E-B short circuited
Collector base leakage current
ICBO
1
40 1)
VCB = 5 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
1
40 1)
VEB = 0.5 V, IC = 0,
open collector
DC current gain
hFE
250
400
160
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
VCE = 3 V, IC = 25 mA,
pulse measured
Unit
Note or test condition
Min.
Typ.
Max.
–
45
–
GHz
VCE = 3 V, IC = 25 mA,
f = 2 GHz
pF
VCB = 3 V, VBE = 0,
f = 1 MHz,
emitter grounded
Transition frequency
fT
Collector base capacitance
CCB
0.08
0.12
Collector emitter capacitance
CCE
0.3
–
Emitter base capacitance
CEB
0.4
1
–
VCE = 3 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
Maximum values not limited by the device but by the short cycle time of the 100% test
Datasheet
5
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VC
Top View
Bias-T
OUT
C
E
VB
B
Bias-T
E
(Pin 1)
IN
Figure 2
Table 6
AC characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
Gms
|S21|2
32
30
IC = 15 mA
Noise figure
•
Minimum noise figure
•
Associated gain
NFmin
Gass
0.4
26.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Datasheet
–
dB
dBm
22.5
6.5
6
ZS = ZL = 50 Ω, IC = 15 mA
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2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
29
28
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.45
25
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Table 8
–
dB
dBm
23
8
ZS = ZL = 50 Ω, IC = 15 mA
AC characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
26.5
25.5
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.5
23
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Table 9
–
dB
dBm
22.5
8
ZS = ZL = 50 Ω, IC = 15 mA
AC characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
25.5
24
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.55
21.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
23.5
8
Datasheet
–
Unit
–
dB
dBm
7
ZS = ZL = 50 Ω, IC = 15 mA
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2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
24.5
22
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.6
20
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
24
8
Table 11
–
Unit
–
dB
dBm
ZS = ZL = 50 Ω, IC = 15 mA
AC characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
23
19
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.75
17.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
24.5
8
Table 12
–
Unit
–
dB
dBm
ZS = ZL = 50 Ω, IC = 15 mA
AC characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
21
15.5
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.8
14
IC = 6 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
24
8
Datasheet
–
Unit
–
dB
dBm
8
ZS = ZL = 50 Ω, IC = 15 mA
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2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 13
AC characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
14
9
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
1.5
10
IC = 6 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Note:
Datasheet
–
dB
dBm
23.5
8
ZS = ZL = 50 Ω, IC = 15 mA
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
9
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
26
100µA
24
90µA
22
80µA
20
70µA
18
60µA
IC [mA]
16
50µA
14
12
40µA
10
30µA
8
20µA
6
10µA
4
2
0
0
1
2
3
V
CE
Figure 3
4
5
[V]
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
3
hFE
10
2
10
−3
10
−2
10
IC [A]
Figure 4
DC current gain hFE = f(IC), VCE = 3 V
Datasheet
10
−1
10
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BFP740F
SiGe:C NPN RF bipolar transistor
10
2
10
1
10
0
−1
10
C
I [mA]
Electrical characteristics
10
−2
10
−3
10
−4
0.5
0.55
0.6
0.65
V
B
10
0
10
−1
10
−2
10
−3
10
−4
10
−5
10
−6
10
−7
0.5
0.55
0.6
0.65
V
Figure 6
Datasheet
0.8
0.85
0.9
BE
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V
I [mA]
Figure 5
0.7
0.75
[V]
0.7
0.75
[V]
0.8
0.85
0.9
BE
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V
11
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
−9
10
−10
IB [A]
10
10
−11
−12
10
−13
10
Figure 7
Datasheet
0.6
0.7
0.8
0.9
VEB [V]
1
1.1
1.2
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V
12
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
50
4.00V
45
40
3.00V
fT [GHz]
35
30
2.50V
25
20
2.00V
15
10
5
0
1.00V
0
10
20
30
40
50
IC [mA]
Figure 8
Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter
26
24
22
20
OIP3 [dBm]
18
16
14
12
10
8
2V, 2400MHz
3V, 2400MHz
2V, 5500MHz
3V, 5500MHz
6
4
2
0
0
5
10
15
I [mA]
20
25
30
C
Figure 9
3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters
Datasheet
13
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BFP740F
SiGe:C NPN RF bipolar transistor
7
8
19
110
1132
1516 7 18
1
19
23
25
21
20
24
23
21
22
1
14
165
17
19
18
20
IC [mA]
25
22
20
25
30
24
Electrical characteristics
15
18
23
20
19
22
5
1.5
22
10
24
23
21
23
2
24
21
24 23 21
22
20
2.5
3
VCE [V]
24
23
2220
19 21
3.5
24
4
Figure 10
3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
Figure 11
Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
Datasheet
14
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
0.2
0.12
C
CB
[pF]
0.16
0.08
0.04
0
0
0.4
0.8
1.2
1.6
2
V
CB
Figure 12
2.4
2.8
3.2
3.6
4
[V]
Collector base capacitance CCB = f(VCB), f = 1 MHz
40
35
30
Gms
G [dB]
25
20
Gma
|S21|2
15
10
5
0
Figure 13
Datasheet
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 15 mA
15
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
45
40
0.15GHz
35
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
G [dB]
30
25
20
5.50GHz
15
10.00GHz
10
5
Figure 14
0
5
10
15
20
25 30
IC [mA]
35
40
45
50
55
Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
20
G
max
[dB]
25
15
10.00GHz
10
5
0
0
0.5
1
1.5
2
V
2.5
3
[V]
3.5
4
4.5
5
CE
Figure 15
Datasheet
Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz
16
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
10.0
10.0
0.3
9.0
0.2
8.0
4
8.0
5
7.0
0.03 to 10 GHz
6.0
7.0
0.1
3
9.0
10
5.0
0.1
0
6.0
0.2 0.3 0.4 0.5
1
4.0
1.5
2
3
4 5
0.03
0.03
5.0
3.0
−0.1
−10
4.0
2.0
−0.2
−5
−4
3.0
−0.3
−3
1.0
−0.4
1.0
2.0
−0.5
−2
−1.5
−1
6.0mA
15mA
Figure 16
Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
10.0
10.0
0.1
0.03 to 10 GHz
10
9.0
0.1
0
9.0
0.2 0.3 0.4 0.5
1
8.0
−0.1
7.0
6.0
−0.2
8.0
7.0
6.0
5.0
4.0
3.0
5.0
1.5
2
3
0.03
0.03
−10
−5
2.0
1.0
4.0
3.0
−0.3
4 5
−4
1.0
2.0
−3
−0.4
−0.5
−2
−1.5
−1
6.0mA
15mA
Figure 17
Datasheet
Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 15 mA
17
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
3.5
5.5
0.1
0.1
0
0.2 0.3 0.4 0.5
−0.1
8.0
10.0
3.5 2.41.9
1.5
0.9
1.5
5.5 1
0.5
8.0
2.4
1.9
1.5
0.9
2 0.5 3
10
4 5
−10
10.0
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
6mA
−1
15mA
Figure 18
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 6 / 15 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
0.6
IC = 15mA
0.4
IC = 6.0mA
0.2
0
0
2
4
6
8
10
f [GHz]
Figure 19
Datasheet
Noise figure NFmin = f(f ),VCE = 3 V, ZS = ZS,opt, IC = 6 / 15 mA
18
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BFP740F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
f = 10GHz
f = 8GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.9GHz
f = 1.5GHz
f = 0.9GHz
f = 0.45GHz
2.8
2.6
2.4
2.2
NFmin [dB]
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Figure 20
0
5
10
IC [mA]
15
20
Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz
3
NF50 [dB]
2.8
2.6
f = 10GHz
2.4
f = 8GHz
2.2
f = 5.5GHz
2
f = 3.5GHz
1.8
f = 2.4GHz
1.6
f = 1.9GHz
1.4
f = 1.5GHz
1.2
f = 0.9GHz
1
f = 0.45GHz
0.8
0.6
0.4
0.2
0
Figure 21
Note:
Datasheet
0
5
10
IC [mA]
15
20
Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
19
v3.0
2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Package information TSFP-4-1
4
Package information TSFP-4-1
Figure 22
Package outline
Figure 23
Foot print
Figure 24
Marking layout example
Figure 25
Tape dimensions
Datasheet
20
v3.0
2018-09-26
BFP740F
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
3.0
2018-09-26
New datasheet layout.
Datasheet
21
v3.0
2018-09-26
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Edition 2018-09-26
Published by
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