BFP740H6327XTSA1

BFP740 SiGe:C NPN RF bipolar transistor Product description The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • • • Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin Configuration BFP740 / BFP740H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel R7s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.0 3.5 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 4 Collector current IC 45 Total power dissipation1) Ptot Junction temperature TJ Storage temperature TStg -55 mA – 160 mW TS ≤ 100 °C 150 °C – 150 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 310 – Unit Note or test condition K/W – 180 160 140 Ptot [mW] 120 100 80 60 40 20 0 0 25 50 75 T [°C] 100 125 150 S Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4.0 4.7 – Collector emitter leakage current ICES – 1 1 400 1) nA 40 1) VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 1 40 1) VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 40 1) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 250 400 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. – 44 – – VCE = 3 V, IC = 25 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 25 mA, f = 2 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.08 Collector emitter capacitance CCE 0.35 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.45 VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded 1 Maximum values not limited by the device but by the short cycle time of the 100% test Datasheet 5 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass Max. – 31.5 28.5 – IC = 15 mA 0.45 26 IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition 22 6.5 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass Values Min. Typ. Max. – 28 27 – dB IC = 15 mA 0.45 24.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet Note or test condition dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 7 Typ. Unit IC = 6 mA dBm 22.5 8 6 ZS = ZL = 50 Ω IC = 15 mA v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – 26 25 – IC = 15 mA 0.5 22.5 IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition 23 7 Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 21.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 9 Max. dB – 25 23.5 – IC = 15 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. – 24 22 Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 20 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 8 Datasheet Max. AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Table 10 Note or test condition dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 9 Typ. Unit Max. dB – IC = 15 mA IC = 6 mA dBm 7 ZS = ZL = 50 Ω IC = 15 mA v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 11 AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.65 17 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 25.5 9 Table 12 Max. dB – Symbol 22 19 – IC = 15 mA IC = 6 mA Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.85 14 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 9 Datasheet Note or test condition dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Note: Unit Max. dB – 19.5 15 – IC = 15 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 8 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams IC [mA] 26 24 100mA 22 90mA 20 80mA 18 70mA 16 60mA 14 50mA 12 40mA 10 30mA 8 20mA 6 10mA 4 2 0 0 1 2 3 V CE Figure 3 4 5 [V] Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 h FE 10 2 10 0 10 1 10 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 9 10 2 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor IC [mA] Electrical characteristics 10 2 10 1 10 0 10 −1 10 −2 10 −3 10 −4 0.5 0.55 0.6 0.65 V 0.7 0.75 [V] 0.8 0.85 0.9 BE Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V IB [mA] Figure 5 Figure 6 Datasheet 10 0 10 −1 10 −2 10 −3 10 −4 10 −5 10 −6 10 −7 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 10 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics −9 10 −10 10 −11 10 −12 10 −13 10 −14 IB [A] 10 0.8 0.9 1 V EB Figure 7 Datasheet 1.1 1.2 [V] Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 11 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 48 44 4V 40 36 3.5 V f T [GHz] 32 3V 28 24 20 2.5 V 16 12 2V 8 4 0 1V 0 10 20 30 40 50 IC [mA] Figure 8 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 26 24 22 20 OIP 3 [dBm] 18 16 14 12 10 8 2V, 3V, 2V, 3V, 6 4 2 0 0 5 10 15 I [mA] C 20 2400MHz 2400MHz 5500MHz 5500MHz 25 30 Figure 9 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters Datasheet 12 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor 25 23 24 26 25 6 7 8 9 1110 11 2 1 43 15 16 17 18 19 20 21 22 Electrical characteristics 26 22 1 1 32 14 15 16 17 18 19 20 21 25 15 24 23 IC [mA] 20 5 22 22 21 20 1 1.5 25 23 19 24 20 21 17 18 16 14 15 10 2 V 23 24 2021 19 2.5 [V] 3 3.5 4 CE 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 11 9 11 8 20 12 7 25 10 Figure 10 10 9 IC [mA] 8 10 9 15 8 7 6 Figure 11 Datasheet 8 7 10 5 4 3 2 1 0 5 2 9 7 6 5 4 3 2 1 0 2.5 8 3 VCE [V] 6 5 4 3 2 1 0 −1 6 5 4 3 2 1 0 3.5 4 Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 13 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 0.2 C CB [pF] 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V [V] CB Figure 12 Collector base capacitance CCB = f(VCB), f = 1 MHz 40 35 30 G ms G [dB] 25 20 |S 21 | 2 G ma 15 10 5 0 Figure 13 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 15 mA 14 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz G ma x [dB] 25 20 5.50GHz 15 10.00GHz 10 5 0 Figure 14 0 5 10 15 20 25 30 IC [mA] 35 40 45 50 55 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz G ma x [dB] 25 20 15 10.00GHz 10 5 0 Figure 15 Datasheet 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz 15 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 0.4 0.3 8.0 3 7.0 4 6.0 6.0 0.2 10.0 9.0 8.0 7.0 2 10.0 9.0 5 5.0 0.03 to 10 GHz 5.0 0.1 10 4.0 0.1 0 0.2 4.0 0.3 0.4 0.5 1 1.5 2 3 4 5 0.03 0.03 3.0 −0.1 −10 −0.2 3.0 2.0 −5 −4 −0.3 1.0 −0.4 −3 1.0 2.0 −0.5 −2 −1.5 −1 6.0mA 15mA Figure 16 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 6 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 10.0 4 10.0 0.2 9.0 0.1 5 9.0 0.03 to 10 GHz 8.0 8.0 10 7.0 7.0 0.1 0 0.2 6.0 0.3 0.4 0.5 1 1.5 2 3 4 5 5.0 6.0 0.03 0.03 4.0 5.0 −0.1 −10 3.0 4.0 −0.2 −5 2.0 1.0 −4 3.0 −0.3 1.0 −3 2.0 −0.4 −0.5 −2 −1.5 −1 6.0mA 15mA Figure 17 Datasheet Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 6 / 15 mA 16 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 0.45 to 10 GHz 4 0.2 5 3.5 4.5 0.1 0.1 0 0.2 0.3 0.4 0.5 5.5 -0.1 2.4 1.9 1.5 3.5 1.9 0.9 0.9 1 1.5 3 4 5 0.45 2 0.45 4.5 5.5 10 -10 8.0 8.0 -0.2 -5 10.0 -0.3 -4 10.0 -3 -0.4 -0.5 -2 6mA 15mA -1.5 -1 Figure 18 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 6 / 15 mA 1.8 1.6 1.4 NF min [dB] 1.2 1 0.8 0.6 IC = 15mA 0.4 IC = 6.0mA 0.2 0 Figure 19 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 6 / 15 mA 17 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Electrical characteristics 2.4 f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f = 0.9GHz f = 0.45GHz 2.2 2 1.8 NF min [dB] 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 IC [mA] Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz NF 50 [dB] Figure 20 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f = 0.9GHz f = 0.45GHz 0 5 10 15 20 25 IC [mA] Figure 21 Note: Datasheet Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves, TA = 25 °C. 18 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 22 Package outline Figure 23 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 24 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 25 Datasheet 1.1 ] Tape dimensions 19 v2.0 2018-09-26 BFP740 SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-25 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ciz1519911065674 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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