BFP760H6327XTSA1

BFP760 SiGe:C NPN RF bipolar transistor Product description The BFP760 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • • • Low noise figure NFmin = 0.95 dB at 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm at 5.5 GHz, 3 V, 30 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • Wireless communications: WLAN, WiMAX and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP760 / BFP760H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel R6s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.0 3.5 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 4 Collector current IC 70 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 240 mW TS ≤ 95 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 230 – Unit Note or test condition K/W – 280 240 P tot [mW] 200 160 120 80 40 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4 4.7 – Collector emitter leakage current ICES – 10 1 400 1) nA 40 1) VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 E-B short circuited Collector base leakage current ICBO 1 40 1) VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 40 1) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 250 400 VCE = 3 V, IC = 35 mA, pulse measured 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Note or test condition Min. Typ. Max. – 45 – GHz VCE = 3 V, IC = 35 mA, f = 1 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.13 0.2 Collector emitter capacitance CCE 0.42 – Emitter base capacitance CEB 0.65 1 Unit VCE = 3 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 29 28 IC = 30 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 25.5 IC = 10 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet – dB dBm 27 14 6 ZS = ZL = 50 Ω, IC = 30 mA v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 25 22 IC = 30 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 20.5 IC = 10 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 28 14.5 Table 8 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 30 mA Unit Note or test condition AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 23.5 20 IC = 30 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.6 19 IC = 10 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 28 14 Table 9 – Max. – dB dBm ZS = ZL = 50 Ω, IC = 30 mA Unit Note or test condition AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. – Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 21.5 16.5 IC = 30 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.7 16 IC = 10 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet – dB dBm 28.5 14.5 7 ZS = ZL = 50 Ω, IC = 30 mA v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 16.5 12 IC = 30 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.95 12.5 IC = 10 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Note: Datasheet – dB dBm 27 13 ZS = ZL = 50 Ω, IC = 30 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 8 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 55 50 220µA 45 200µA 180µA 40 160µA IC [mA] 35 140µA 120µA 30 100µA 25 80µA 20 60µA 15 40µA 10 20µA 5 0 Figure 3 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 0 10 1 10 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 9 2 10 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 2 10 1 10 0 −1 10 C I [mA] 10 −2 10 −3 10 −4 10 Figure 5 0.5 0.55 0.6 0.65 0.7 VBE [V] 0.75 0.8 0.85 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V 0 10 −1 10 −2 −3 10 B I [mA] 10 −4 10 −5 10 −6 10 Figure 6 Datasheet 0.5 0.55 0.6 0.65 0.7 VBE [V] 0.75 0.8 0.85 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 10 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics −11 IB [A] 10 −12 10 −13 10 Figure 7 Datasheet 0.6 0.7 0.8 0.9 VEB [V] 1 1.1 1.2 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 11 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 50 45 4.00V 3.50V 40 3.00V fT [GHz] 35 30 2.50V 25 20 2.00V 15 10 1.50V 1.00V 5 0 Figure 8 0 10 20 30 40 IC [mA] 50 60 70 80 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 0.28 0.24 CCB [pF] 0.2 0.16 0.12 0.08 0.04 0 0 0.6 1.2 1.8 2.4 3 VCB [V] Figure 9 Datasheet Collector base capacitance CCB = f(VCB), f = 1 MHz 12 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 45 40 35 G [dB] 30 Gms 25 20 Gma 15 |S21|2 10 5 0 Figure 10 0 1 2 3 4 5 f [G] 6 7 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 30 mA 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz Gmax [dB] 25 20 3.50GHz 15 5.50GHz 10.00GHz 10 5 0 Figure 11 Datasheet 0 10 20 30 40 50 IC [mA] 60 70 80 90 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 13 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz Gmax 25 20 5.50GHz 15 10.00GHz 10 5 0 Figure 12 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Maximum power gain Gmax = f(VCE), IC = 30 mA, f = parameter in GHz 30 25 OIP3 [dBm] 20 15 2V, 2400MHz 3V, 2400MHz 2V, 5500MHz 3V, 5500MHz 10 5 0 0 10 20 30 40 50 IC [mA] Figure 13 Datasheet 3rd order intercept point at output OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters 14 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor 14 10 9 11 8 10 5 6 4 8 7 6 5 4 0 −2−1 1 1 1.5 2 3 −3 −4 2 12 11 9 10 5 13 12 20 15 14 13 5 3 4 25 7 C I [mA] 30 12 4 6 7 − 0−1 2 35 15 2 1 40 8 Electrical characteristics 3 12 0 −2−1 11 10 9 8 7 6 5 4 −3 −4 3 2.5 V [V] 10 9 8 7 6 5 0 −2−1 12 3.5 3 −3 4 CE Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 45 26 22 23 24 25 18 19 20 21 50 1 32 4 5 76 8 190 1 11 132 15 16 17 Figure 14 27 28 28 27 26 25 IC [mA] 35 11 1132 15 1 16 4 17 18 19 20 21 22 23 24 40 30 25 26 27 25 24 23 22 21 20 19 18 17 16 15 20 15 Figure 15 Datasheet 14 10 26 1 1.5 2 2.5 VCE [V] 3 3.5 4 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 15 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 10.0 0.5 9.0 0.4 7.0 0.3 6.0 8.0 3 7.0 6.0 4 5.0 5.0 0.2 2 10.0 9.0 8.0 5 4.0 0.03 to 10 GHz 4.0 0.1 10 3.0 0.1 0 3.0 0.2 0.3 0.4 0.5 1 1.5 2 3 2.0 4 5 0.03 0.03 −0.1 −10 2.0 −0.2 1.0 −5 −4 −0.3 −3 −0.4 1.0 −0.5 −2 −1.5 30mA −1 10mA Figure 16 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 10 / 30 mA 1 1.5 0.5 2 0.4 3 0.3 10.0 10.0 4 9.0 9.0 0.2 5 8.0 0.1 8.0 7.0 7.0 6.0 6.0 0.1 0 0.2 0.3 0.4 5.0 0.5 0.03 to 10 GHz 10 5.0 4.0 1 1.5 2 3 4 5 3.0 4.0 0.03 0.03 2.0 −0.1 −10 3.0 −0.2 2.0 1.0 −5 −4 −0.3 1.0 −3 −0.4 −0.5 −2 −1.5 −1 30mA 10mA Figure 17 Datasheet Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 10 / 30 mA 16 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.1 2.4 3.5 0.1 0 0.2 0.3 0.4 0.5 0.9 1.8 1 10 0.9 1.5 2 3 4 5 2.4 3.5 5.5 −0.1 1.8 −10 5.5 8.0 −0.2 −5 8.0 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 30mA 10mA Figure 18 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 10 / 30 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 IC = 30mA 0.6 IC = 10mA 0.4 0.2 0 Figure 19 Datasheet 0 1 2 3 4 f [GHz] 5 6 7 8 Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 10 / 30 mA 17 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor NFmin [dB] Electrical characteristics Figure 20 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 0 5 10 15 20 IC [mA] 25 30 35 40 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz 6 5.5 5 4.5 f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz NF50 [dB] 4 3.5 3 2.5 2 1.5 1 0.5 0 Figure 21 Note: Datasheet 0 5 10 15 20 IC [mA] 25 30 35 40 Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 22 Package outline Figure 23 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 24 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 25 Datasheet 1.1 ] Tape dimensions 19 v2.0 2018-09-26 BFP760 SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-leh1519206637391 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury