BFP760
SiGe:C NPN RF bipolar transistor
Product description
The BFP760 is a wideband NPN RF heterojunction bipolar transistor (HBT).
Feature list
•
•
•
Low noise figure NFmin = 0.95 dB at 5.5 GHz, 3 V, 10 mA
High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA
OIP3 = 27 dBm at 5.5 GHz, 3 V, 30 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
•
•
Wireless communications: WLAN, WiMAX and UWB
Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite
radio (SDARs, DAB) and C-band LNB
Multimedia applications such as mobile/portable TV, CATV and FM radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
BFP760 / BFP760H6327XTSA1
SOT343
1=B
2=E
3=C
4=E
Marking
Pieces / Reel
R6s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v2.0
2018-09-26
BFP760
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
3.4
3.5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Datasheet
2
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BFP760
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
VCEO
–
Unit
Note or test condition
V
Open base
Max.
4.0
3.5
TA = -55 °C, open base
Collector emitter voltage
VCES
13
E-B short circuited
Collector base voltage
VCBO
13
Open emitter
Emitter base voltage
VEBO
1.2
Open collector
Base current
IB
4
Collector current
IC
70
Total power dissipation 1)
Ptot
Junction temperature
TJ
Storage temperature
TStg
mA
–
240
mW
TS ≤ 95 °C
150
°C
–
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
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BFP760
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
230
–
Unit
Note or test condition
K/W
–
280
240
P
tot
[mW]
200
160
120
80
40
0
Figure 1
Datasheet
0
25
50
75
TS [°C]
100
125
150
Total power dissipation Ptot = f(TS)
4
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
V
IC = 1 mA, IB = 0,
open base
Collector emitter breakdown voltage
V(BR)CEO
4
4.7
–
Collector emitter leakage current
ICES
–
10
1
400 1) nA
40 1)
VCE = 13 V, VBE = 0
VCE = 5 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
1
40 1)
VCB = 5 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
1
40 1)
VEB = 0.5 V, IC = 0,
open collector
DC current gain
hFE
250
400
VCE = 3 V, IC = 35 mA,
pulse measured
160
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Note or test condition
Min.
Typ.
Max.
–
45
–
GHz
VCE = 3 V, IC = 35 mA,
f = 1 GHz
pF
VCB = 3 V, VBE = 0,
f = 1 MHz,
emitter grounded
Transition frequency
fT
Collector base capacitance
CCB
0.13
0.2
Collector emitter capacitance
CCE
0.42
–
Emitter base capacitance
CEB
0.65
1
Unit
VCE = 3 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
5
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VC
Top View
Bias-T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 2
Testing circuit
Table 6
AC characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
Gms
|S21|2
29
28
IC = 30 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.5
25.5
IC = 10 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Datasheet
–
dB
dBm
27
14
6
ZS = ZL = 50 Ω,
IC = 30 mA
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics, VCE = 3 V, f = 1.8 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
25
22
IC = 30 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.55
20.5
IC = 10 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
28
14.5
Table 8
–
Unit
–
dB
dBm
ZS = ZL = 50 Ω,
IC = 30 mA
Unit
Note or test condition
AC characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
23.5
20
IC = 30 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.6
19
IC = 10 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
28
14
Table 9
–
Max.
–
dB
dBm
ZS = ZL = 50 Ω,
IC = 30 mA
Unit
Note or test condition
AC characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
21.5
16.5
IC = 30 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
0.7
16
IC = 10 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Datasheet
–
dB
dBm
28.5
14.5
7
ZS = ZL = 50 Ω,
IC = 30 mA
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
16.5
12
IC = 30 mA
Noise figure
•
Minimum noise figure
•
Associated gain
NFmin
Gass
0.95
12.5
IC = 10 mA
Linearity
•
3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Note:
Datasheet
–
dB
dBm
27
13
ZS = ZL = 50 Ω,
IC = 30 mA
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
8
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
55
50
220µA
45
200µA
180µA
40
160µA
IC [mA]
35
140µA
120µA
30
100µA
25
80µA
20
60µA
15
40µA
10
20µA
5
0
Figure 3
0
0.5
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
3
hFE
10
2
10
0
10
1
10
IC [mA]
Figure 4
DC current gain hFE = f(IC), VCE = 3 V
Datasheet
9
2
10
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
2
10
1
10
0
−1
10
C
I [mA]
10
−2
10
−3
10
−4
10
Figure 5
0.5
0.55
0.6
0.65
0.7
VBE [V]
0.75
0.8
0.85
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V
0
10
−1
10
−2
−3
10
B
I [mA]
10
−4
10
−5
10
−6
10
Figure 6
Datasheet
0.5
0.55
0.6
0.65
0.7
VBE [V]
0.75
0.8
0.85
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V
10
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
−11
IB [A]
10
−12
10
−13
10
Figure 7
Datasheet
0.6
0.7
0.8
0.9
VEB [V]
1
1.1
1.2
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V
11
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
50
45
4.00V
3.50V
40
3.00V
fT [GHz]
35
30
2.50V
25
20
2.00V
15
10
1.50V
1.00V
5
0
Figure 8
0
10
20
30
40
IC [mA]
50
60
70
80
Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter
0.28
0.24
CCB [pF]
0.2
0.16
0.12
0.08
0.04
0
0
0.6
1.2
1.8
2.4
3
VCB [V]
Figure 9
Datasheet
Collector base capacitance CCB = f(VCB), f = 1 MHz
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
45
40
35
G [dB]
30
Gms
25
20
Gma
15
|S21|2
10
5
0
Figure 10
0
1
2
3
4
5
f [G]
6
7
8
9
10
Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 30 mA
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
Gmax [dB]
25
20
3.50GHz
15
5.50GHz
10.00GHz
10
5
0
Figure 11
Datasheet
0
10
20
30
40
50
IC [mA]
60
70
80
90
Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
13
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
Gmax
25
20
5.50GHz
15
10.00GHz
10
5
0
Figure 12
0
0.5
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Maximum power gain Gmax = f(VCE), IC = 30 mA, f = parameter in GHz
30
25
OIP3 [dBm]
20
15
2V, 2400MHz
3V, 2400MHz
2V, 5500MHz
3V, 5500MHz
10
5
0
0
10
20
30
40
50
IC [mA]
Figure 13
Datasheet
3rd order intercept point at output OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters
14
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BFP760
SiGe:C NPN RF bipolar transistor
14
10
9
11
8
10
5
6
4
8
7
6
5
4
0
−2−1
1
1
1.5
2
3
−3
−4 2
12
11
9
10
5
13
12
20
15
14
13
5
3
4
25
7
C
I [mA]
30
12
4
6
7
−
0−1 2
35
15
2 1
40
8
Electrical characteristics
3
12
0
−2−1
11
10
9
8
7
6
5
4
−3
−4 3
2.5
V [V]
10
9
8
7
6
5
0
−2−1
12
3.5
3
−3
4
CE
Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
45
26
22 23
24
25
18 19
20
21
50
1
32
4
5
76
8
190
1
11
132
15
16
17
Figure 14
27
28
28
27
26
25
IC [mA]
35
11
1132
15 1
16 4
17
18
19
20
21
22
23
24
40
30
25
26
27
25
24
23
22
21
20
19
18
17
16
15
20
15
Figure 15
Datasheet
14
10
26
1
1.5
2
2.5
VCE [V]
3
3.5
4
3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
15
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
10.0
0.5
9.0
0.4
7.0
0.3
6.0
8.0
3
7.0
6.0
4
5.0
5.0
0.2
2
10.0
9.0
8.0
5
4.0
0.03 to 10 GHz
4.0
0.1
10
3.0
0.1
0
3.0
0.2
0.3 0.4 0.5
1
1.5
2
3
2.0
4 5
0.03
0.03
−0.1
−10
2.0
−0.2
1.0
−5
−4
−0.3
−3
−0.4
1.0
−0.5
−2
−1.5
30mA
−1
10mA
Figure 16
Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 10 / 30 mA
1
1.5
0.5
2
0.4
3
0.3
10.0
10.0
4
9.0
9.0
0.2
5
8.0
0.1
8.0
7.0
7.0
6.0
6.0
0.1
0
0.2 0.3 0.4 5.0
0.5
0.03 to 10 GHz
10
5.0
4.0
1
1.5
2
3
4 5
3.0
4.0
0.03
0.03
2.0
−0.1
−10
3.0
−0.2
2.0
1.0
−5
−4
−0.3
1.0
−3
−0.4
−0.5
−2
−1.5
−1
30mA
10mA
Figure 17
Datasheet
Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 10 / 30 mA
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BFP760
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.1
2.4
3.5
0.1
0
0.2
0.3 0.4 0.5
0.9
1.8
1
10
0.9
1.5
2
3
4 5
2.4
3.5
5.5
−0.1
1.8
−10
5.5
8.0
−0.2
−5
8.0
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
30mA
10mA
Figure 18
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 10 / 30 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
IC = 30mA
0.6
IC = 10mA
0.4
0.2
0
Figure 19
Datasheet
0
1
2
3
4
f [GHz]
5
6
7
8
Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 10 / 30 mA
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BFP760
SiGe:C NPN RF bipolar transistor
NFmin [dB]
Electrical characteristics
Figure 20
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 8GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
0
5
10
15
20
IC [mA]
25
30
35
40
Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz
6
5.5
5
4.5
f = 8GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
NF50 [dB]
4
3.5
3
2.5
2
1.5
1
0.5
0
Figure 21
Note:
Datasheet
0
5
10
15
20
IC [mA]
25
30
35
40
Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
18
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BFP760
SiGe:C NPN RF bipolar transistor
Package information SOT343
0.9 ±0.1
Package information SOT343
1.25 ±0.1
0.15 -0.05
+0.10
A
0.1
0.1 MIN.
0.1
2.1 ±0.1
A
2
1
3x
+0.10
0.3 -0.05
0.6 -0.05
+0.10
1.3
2 ±0.2
0.1
3
4
0.15
0.2
0.1 MAX.
4
MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
]
Figure 22
Package outline
Figure 23
Foot print
TYP E CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Figure 24
Marking layout example
4
0.2
2.3
8
2
P IN 1
INDEX MARKING
2.15
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
Figure 25
Datasheet
1.1
]
Tape dimensions
19
v2.0
2018-09-26
BFP760
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-09-26
New datasheet layout.
Datasheet
20
v2.0
2018-09-26
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Edition 2018-09-26
Published by
Infineon Technologies AG
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© 2018 Infineon Technologies AG
All Rights Reserved.
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Document reference
IFX-leh1519206637391
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