BFP840ESDH6327XTSA1

BFP840ESD SiGe:C NPN RF bipolar transistor Product description The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list • • • • • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enable low noise figure at high frequencies: NFmin = 0.85 dB at 5.5 GHz, 1.8 V, 5 mA High gain Gms = 22.5 dB at 5.5 GHz, 1.8 V, 10 mA OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • Mobile and fixed connectivity applications: WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table 1 Part information Product name / Ordering code Package BFP840ESD / BFP840ESDH6327XTSA1 SOT343 Pin configuration 1=B 2=E 3=C 4=E Marking Pieces / Reel T8s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector base voltage 1) Collector emitter voltage 2) VCEO – VCBO VCES Unit Note or test condition V Open base Max. 2.25 2.0 TA = -55 °C, open base 2.9 Open emitter 2.6 TA = -55 °C, open emitter 2.25 E-B short circuited 2.0 TA = -55 °C, E-B short circuited Base current IB -5 3 mA – Collector current IC – 35 RF input power PRFin – 20 dBm ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation 3) Ptot – 75 mW TS ≤ 108 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCBO is similar to VCEO due to design. VCES is identical to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 551 – Unit Note or test condition K/W – 80 70 60 Ptot [mW] 50 40 30 20 10 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – Collector emitter leakage current ICES – – 400 1) nA VCE = 1.5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 1.5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 150 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 260 μA 450 Values Min. Typ. Max. – 80 – VEB = 0.5 V, IC = 0, open collector VCE = 1.8 V, IC = 10 mA, pulse measured Unit Note or test condition GHz VCE = 1.8 V, IC = 25 mA, f = 2 GHz Transition frequency fT Collector base capacitance CCB 37 fF VCB = 1.8 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.40 pF VCE = 1.8 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.41 1 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test Datasheet 5 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 1.8 V, f = 0.45 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 33.5 27.5 – dB IC = 10 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.6 26.5 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 19.5 4 – dBm ZS = ZL = 50 Ω, IC = 10 mA Datasheet 6 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 1.8 V, f = 0.9 GHz Parameter Symbol Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Gms |S21|2 Typ. Max. – 30 27 – Note or test condition dB IC = 10 mA NFmin Gass – 0.6 25.5 – – 19.5 4 – IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Unit Note or test condition dB IC = 10 mA AC characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Symbol Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Gms |S21|2 Values Min. Typ. Max. – 28 25.5 – dB NFmin Gass Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 9 Min. Unit dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 8 Values – 0.65 24 – – 19.5 4 – IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Unit Note or test condition dB IC = 10 mA AC characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Symbol Gms |S21|2 Values Min. Typ. Max. – 27 25 – dB NFmin Gass – 0.65 23 – Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 21 4.5 – Datasheet 7 IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Gms |S21|2 Typ. Max. – 26 24 – Note or test condition dB IC = 10 mA NFmin Gass – 0.7 22 – – 21 4 – IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Unit Note or test condition dB IC = 10 mA AC characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Symbol Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Gms |S21|2 Values Min. Typ. Max. – 24.5 22 – dB NFmin Gass Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 12 Min. Unit dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 11 Values – 0.7 20 – – 22.5 5 – IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Unit Note or test condition dB IC = 10 mA AC characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Symbol Gms |S21|2 Values Min. Typ. Max. – 22.5 18.5 – dB NFmin Gass – 0.85 17 – Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 22 5 – Datasheet 8 IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Gms |S21|2 Max. – 17 12 – NFmin Gass – 1.2 12.5 – – 19.5 2.5 – Symbol Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Gms |S21|2 dB IC = 10 mA IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Values Unit Note or test condition Min. Typ. Max. – 15.5 9.5 – dB IC = 10 mA dB NFmin Gass Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet Typ. Note or test condition AC characteristics, VCE = 1.8 V, f = 12 GHz Parameter Note: Min. Unit dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 14 Values – 1.45 11 – – 18.5 1.5 – IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 18 IB = 70µA 16 IB = 60µA 14 IB = 50µA 12 IC [mA] I = 40µA B 10 IB = 30µA 8 6 IB = 20µA 4 IB = 10µA 2 0 Figure 3 0 0.5 1 1.5 VCE [V] 2 2.5 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 −2 10 Figure 4 Datasheet −1 10 0 10 IC [mA] 1 10 2 10 DC current gain hFE = f(IC), VCE = 1.8 V 10 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 2 10 1 10 0 10 IC [mA] −1 10 −2 10 −3 10 −4 10 −5 10 Figure 5 0.5 0.6 0.7 VBE [V] 0.8 0.9 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V 0 10 −1 10 −2 10 I B [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.6 V Figure 6 Datasheet BE 0.7 [V] 0.8 0.9 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V 11 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics −6 10 −7 10 −8 IB [A] 10 −9 10 −10 10 −11 10 0.3 0.4 V Figure 7 Datasheet EB 0.5 [V] 0.6 0.7 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V 12 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Characteristic AC diagrams fT [GHz] 3.5 Figure 8 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 2.00V 1.80V 1.50V 1.00V 0.50V 0 5 10 15 20 IC [mA] 25 30 35 40 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 26 24 22 20 OIP3 [dBm] 18 16 14 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 12 10 8 6 4 2 0 Figure 9 Datasheet 0 5 10 15 IC [mA] 20 25 30 3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters 13 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 25 9 10 1 2 1 1 13 14 4 5 6 7 8 18 15 16 17 19 18 15 16 17 20 18 17 22 21 15 16 15 C I [mA] 19 20 9 10 11 12 3 4 1 1 20 21 19 22 21 19 5 20 21 1 22 1.2 21 23 1.4 V 25 −6 −5 −4 3 2 − − −1 0 22 20 19 21 18 1.8 2 4 1 2 3 2 4 5 6 7 5 6 3 5 15 7 6 10 5 3 1.2 5 4 3 2 1 0 −1 1 6 5 4 3 2 1 0 −1 1.4 4 2 1 0 −1 1.6 V Datasheet 22 20 21 1.6 [V] 7 1 C I [mA] 20 Figure 11 22 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 4 Figure 10 CE 23 18 20 10 CE 1.8 2 [V] Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 14 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 0.05 CCB [pF] 0.045 0.04 0.035 0.03 Figure 12 0 0.2 0.4 0.6 0.8 1 1.2 VCB [V] 1.4 1.6 1.8 2 11 12 Collector base capacitance CCB = f(VCB), f = 1 MHz 40 35 30 G [dB] G ms 25 G ma 20 |S21|2 15 10 5 Figure 13 Datasheet 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 10 mA 15 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 39 36 0.45GHz 33 0.90GHz Gmax [dB] 30 27 1.50GHz 1.90GHz 2.40GHz 24 3.50GHz 21 5.50GHz 18 10.00GHz 12.00GHz 15 12 9 0 5 10 15 20 25 I [mA] 30 35 40 45 C Figure 14 Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz 39 G max [dB] 36 33 0.45GHz 30 0.90GHz 27 1.50GHz 1.90GHz 2.40GHz 3.50GHz 24 5.50GHz 21 18 10.00GHz 12.00GHz 15 12 9 0 0.5 1 V Figure 15 Datasheet 1.5 [V] 2 2.5 3 CE Maximum power gain Gmax = f(VCE), IC = 10 mA, f = parameter in GHz 16 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 12.0 0.4 12.0 11.0 11.0 10.0 0.3 9.0 0.2 3 10.0 9.0 4 5 8.0 8.0 0.03 to 12 GHz 7.0 0.1 7.0 0.1 0 10 6.0 0.2 0.3 0.4 0.5 6.0 1 5.0 1.5 2 3 4 5 0.03 0.03 4.0 −0.1 −10 5.0 3.0 −0.2 2.0 4.0 1.0 1.0 1.0 2.0 −0.3 −3 3.0 −0.4 −5 −4 2.0 5mA −0.5 10mA −2 15mA −1.5 −1 Figure 16 Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 3.5 2.4 5.5 0.1 5.5 0.1 0 0.2 0.3 0.4 0.5 1 1.5 3.5 5.5 −0.1 8.0 0.5 10 1.9 1.5 3.5 2.4 3 0.9 4 5 2 0.5 0.5 −10 8.0 −0.2 −5 10.0 10.0 −0.3 −4 12.0 −3 12.0 5mA −0.4 −0.5 −2 10mA 15mA −1.5 −1 Figure 17 Datasheet Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 17 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 2 0.5 0.4 12.0 0.3 10.0 0.2 0.1 0 5 9.0 10 8.0 8.0 0.2 0.3 0.4 0.5 1 7.0 7.0 −0.1 4 10.0 0.03 to 12 GHz 9.0 0.1 3 12.0 11.0 11.0 1.5 2 3 4 5 0.03 6.0 6.0 −10 5.0 4.0 −0.2 5.0 1.0 3.0 1.0 −5 −4 2.0 4.0 −0.3 −3 2.0 3.0 −0.4 5mA −0.5 −2 10mA 15mA −1.5 −1 Figure 18 Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 IC = 15mA 0.6 IC = 10mA 0.4 IC = 5mA 0.2 0 Figure 19 Datasheet 0 2 4 6 f [GHz] 8 10 12 Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 5 / 10 / 15 mA 18 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 f = 12GHz 0.8 f = 10GHz 0.6 f = 5.5GHz 0.4 f = 3.5GHz f = 2.4GHz 0.2 0 Figure 21 Note: Datasheet 0 5 10 IC [mA] 15 20 Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = Zopt, f = parameter in GHz NF50 [dB] Figure 20 f = 0.9GHz 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 12GHz f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 0.9GHz 0 5 10 IC [mA] 15 20 Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 19 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 22 Package outline Figure 23 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 24 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 25 Datasheet 1.1 ] Tape dimensions 20 v2.0 2018-09-26 BFP840ESD SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 21 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-kyv1515503149194 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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