BFP840FESDH6327XTSA1

BFP840FESD SiGe:C NPN RF bipolar transistor Product description The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list • • • • • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to enable best in class noise performance at high frequencies: NFmin = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA High gain Gms = 23 dB at 5.5 GHz, 1.8 V, 10 mA OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table 1 Part information Product name / Ordering code Package BFP840FESD / BFP840FESDH6327XTSA1 TSFP-4-1 Pin configuration 1=B 2=E 3=C 4=E Marking Pieces / Reel T8s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector base voltage 1) Collector emitter voltage 2) VCEO – VCBO VCES Unit Note or test condition V Open base Max. 2.25 2.0 TA = -55°C, open base 2.9 Open emitter 2.6 TA = -55°C, open emitter 2.25 E-B short circuited 2.0 TA = -55°C, E-B short circuited Base current IB -5 3 mA – Collector current IC – 35 RF input power PRFin – 20 dBm ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation 3) Ptot – 75 mW TS ≤ 109 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCBO is similar to VCEO due to design. VCES is similar to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 541 – Unit Note or test condition K/W – 80 70 60 Ptot [mW] 50 40 30 20 10 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – Collector emitter leakage current ICES – – 400 1) nA VCE = 1.5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 1.5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 150 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 260 μA 450 Values Min. Typ. Max. – 85 – VEB = 0.5 V, IC = 0, open collector VCE = 1.8 V, IC = 10 mA, pulse measured Unit Note or test condition GHz VCE = 1.8 V, IC = 25 mA, f = 2 GHz Transition frequency fT Collector base capacitance CCB 38 fF VCB = 1.8 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.37 pF VCE = 1.8 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.37 1 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test Datasheet 5 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 1.8 V, f = 0.45 GHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain – Gms |S21|2 35 28 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.55 27 Note or test condition Max. – dB IC = 10 mA dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet Unit IC = 5 mA dBm 19.5 4 6 ZS = ZL = 50 Ω, IC = 10 mA v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 1.8 V, f = 0.9 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Gms |S21|2 IC = 10 mA dB Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 19.5 4 IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA AC characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Unit Gms |S21|2 Note or test condition Max. – dB 28.5 26 IC = 10 mA dB NFmin Gass 0.6 25 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 20 4 IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA AC characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Gms |S21|2 Unit Note or test condition Max. – dB 27.5 25.5 IC = 10 mA dB NFmin Gass 0.65 24 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet dB 31 27 0.6 26.5 Table 9 Note or test condition Max. – NFmin Gass Table 8 Unit IC = 5 mA dBm 21 4.5 7 ZS = ZL = 50 Ω, IC = 10 mA v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Gms |S21|2 26.5 24 IC = 10 mA dB NFmin Gass 0.65 22.5 IC = 5 mA dBm 21 4 Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Unit ZS = ZL = 50 Ω, IC = 10 mA Gms |S21|2 Note or test condition Max. – dB 25 22 IC = 10 mA dB NFmin Gass 0.7 20.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 22.5 5 IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA AC characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Gms |S21|2 Unit Note or test condition Max. – dB 23 19 IC = 10 mA dB NFmin Gass 0.75 17.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet dB AC characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Table 12 Note or test condition Max. – Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 11 Unit IC = 5 mA dBm 22 5 8 ZS = ZL = 50 Ω, IC = 10 mA v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain – Gma |S21|2 – IC = 10 mA dB NFmin Gass 1.1 13 IC = 5 mA dBm 19.5 3 Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure • Associated gain Typ. – Gma |S21|2 Unit ZS = ZL = 50 Ω, IC = 10 mA Note or test condition Max. – dB 15.5 10.5 IC = 10 mA dB NFmin Gass 1.3 10.5 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 18.5 1.5 Datasheet dB AC characteristics, VCE = 1.8 V, f = 12 GHz Parameter Note: Note or test condition Max. 16 13 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 14 Typ. Unit IC = 5 mA dBm ZS = ZL = 50 Ω, IC = 10 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 18 IB = 70µA 16 IB = 60µA 14 IB = 50µA 12 IC [mA] I = 40µA B 10 IB = 30µA 8 6 IB = 20µA 4 IB = 10µA 2 0 Figure 3 0 0.5 1 1.5 VCE [V] 2 2.5 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 −2 10 Figure 4 Datasheet −1 10 0 10 IC [mA] 1 10 2 10 DC current gain hFE = f(IC), VCE = 1.8 V 10 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 2 10 1 10 0 10 IC [mA] −1 10 −2 10 −3 10 −4 10 −5 10 Figure 5 0.5 0.6 0.7 VBE [V] 0.8 0.9 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 Figure 6 Datasheet 0.5 0.6 0.7 VB [V] 0.8 0.9 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V 11 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics −6 10 −7 10 −8 IB[ A ] 10 −9 10 −10 10 −11 10 0.3 0.4 V 0.5 [V] 0.6 0.7 EB Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V 12 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Characteristic AC diagrams fT [GHz] 3.5 Figure 8 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 2.00V 1.80V 1.50V 1.00V 0.50V 0 5 10 15 20 25 IC [mA] 30 35 40 45 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter 25 OIP3 [dBm] 20 15 10 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 5 0 Figure 9 Datasheet 0 5 10 15 IC [mA] 20 25 30 3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameter 13 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 4 6 7 14 15 16 17 8 1 19 15 16 17 18 19 14 20 21 20 21 15 16 17 18 19 15 9 10 112 1 3 1 8 9 10 112 13 1 20 IC [mA] 5 20 25 21 18 10 20 19 5 Figure 10 22 21 22 21 19 20 1.8 22 21 19 20 1.4 1.6 VCE [V] 20 19 1.2 1 22 2 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 25 0 1 −6 −5 −4 −3 5 4 6 −2 1 5 3 4 3 3 2 2 1 0 −1 −2 1 7 6 5 10 5 7 5 6 4 IC [mA] 2 15 3 2 6 −1 0 20 1.2 5 4 3 2 1 0 −1 −2 1.4 4 2 1 0 −1 1.6 1.8 2 VCE [V] Figure 11 Datasheet Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 14 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 0.05 CCB [pF] 0.045 0.04 0.035 0.03 Figure 12 0 0.2 0.4 0.6 0.8 1 1.2 VCB [V] 1.4 1.6 1.8 2 11 12 Collector base capacitance CCB = f(VCB), f = 1 MHz 40 35 G [dB] 30 Gms 25 G ma 20 |S |2 21 15 10 5 Figure 13 Datasheet 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 10 mA 15 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 40 0.45GHz 35 Gmax [dB] 0.9GHz 30 1.5GHz 1.9GHz 2.4GHz 25 3.5GHz 20 5.5GHz 15 10.0GHz 12.0GHz 10 Figure 14 0 5 10 15 20 25 IC [mA] 30 35 40 45 Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz 39 36 0.45GHz Gmax [dB] 33 0.9GHz 30 1.5GHz 27 1.9GHz 2.4GHz 3.5GHz 24 5.5GHz 21 18 10GHz 15 12GHz 12 9 0 0.5 1 1.5 2 2.5 VCE [V] Figure 15 Datasheet Maximum power gain Gmax = f(VCE), IC = 10 mA, f = parameter in GHz 16 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 0.3 12.0 0.2 5 10.0 0.03 to 12 GHz 9.0 10.0 0.1 4 11.0 11.0 10 8.0 9.0 7.0 0.1 0 3 12.0 0.2 0.3 0.4 0.5 −0.1 1 1.5 2 3 4 5 0.03 0.03 6.0 8.0 5.0 7.0 −10 4.0 6.0 −0.2 −5 3.0 5.0 1.0 1.0 2.0 −0.3 −4 5.0mA −3 4.0 −0.4 10mA 2.0 3.0 15mA −0.5 −2 −1.5 −1 Figure 16 Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 5.5 0.1 3.5 2.4 1.9 1.5 5.5 8.0 0.1 0 0.2 0.3 0.4 0.5 2.4 1 5.53.51.5 1.5 2 0.5 8.0 3 0.9 10 0.5 4 5 10.0 −0.1 −10 10.0 12.0 −0.2 12.0 −5 −4 −0.3 −3 −0.4 −0.5 −2 5mA 10mA 15mA −1.5 −1 Figure 17 Datasheet Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 17 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 12.0 0.2 12.0 5 11.0 0.03 to 12 GHz 11.0 0.1 10.0 0.1 0 0.2 0.3 0.4 0.5 1 9.0 9.0 2 3 4 5 0.03 −10 7.0 8.0 6.0 5.0 7.0 4.0 3.0 6.0 −0.3 1.5 8.0 −0.1 −0.2 10 10.0 1.0 −4 5.0 −0.4 −3 2.0 4.0 1.0 −5 2.0 3.0 −0.5 5.0mA 10mA 15mA −2 −1.5 −1 Figure 18 Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 0.4 IC = 15mA I = 10mA 0.2 0 Figure 19 Datasheet C IC = 5mA 0 2 4 6 f [GHz] 8 10 12 Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 5 / 10 / 15 mA 18 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 2.2 f = 12GHz 2 f = 10GHz NFmin [dB] 1.8 f = 5.5GHz 1.6 f = 3.5GHz 1.4 f = 2.4GHz f = 0.9GHz 1.2 1 0.8 0.6 0.4 0.2 0 Figure 21 Note: Datasheet 5 10 IC [mA] 15 20 Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter in GHz NF50 [dB] Figure 20 0 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 12GHz f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 0.9GHz 0 5 10 IC [mA] 15 20 Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 19 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Package information TSFP-4-1 4 Package information TSFP-4-1 Figure 22 Package outline Figure 23 Foot print Figure 24 Marking layout example Figure 25 Tape dimensions Datasheet 20 v2.0 2018-09-26 BFP840FESD SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 21 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-gse1516184165320 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury