BFP842ESDH6327XTSA1

BFP842ESD SiGe:C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list • • • • • Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • • Wireless communications: WLAN, WiMAX and Bluetooth Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB (1st and 2nd stage LNA) Multimedia applications such as mobile/portable TV, mobile TV and FM radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP842ESD / BFP842ESDH6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel T9s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector emitter voltage 1) Collector base voltage 2) VCEO – VCES VCBO Unit Note or test condition V Open base Max. 3.25 2.9 TA = -40 °C, open base 3.25 E-B short circuited 2.9 TA = -40 °C, E-B short circuited 4.1 Open emitter 3.5 TA = -40 °C, open emitter Base current IB -5 3 Collector current IC – 40 RF input power PRFin ESD stress pulse VESD Total power dissipation 3) Ptot Junction temperature TJ Storage temperature TStg mA 16 dBm -1 1 kV HBM, all pins, acc. to JESD22-A114 – 120 mW TS ≤ 111 °C 150 °C -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCES is similar to VCEO due to design. VCBO is similar to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Unit Min. Typ. Max. – 324 – Note or test condition K/W 140 120 Ptot [mW] 100 80 60 40 20 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 3.25 3.7 – Collector emitter leakage current ICES – – 400 1) nA VCE = 2 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 2 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 150 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 260 μA 450 Values Min. Typ. Max. – 57 – VEB = 0.5 V, IC = 0, open collector VCE = 2.5 V, IC = 15 mA, pulse measured Unit Note or test condition GHz VCE = 2.5 V, IC = 25 mA, f = 1 GHz Transition frequency fT Collector base capacitance CCB 64 fF VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.46 pF VCE = 2 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.44 1 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 2.5 V, f = 450 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 33 29.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.4 26 IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 7 – dB dBm 22 6.5 ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 2.5 V, f = 900 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 29 26 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.45 24 IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet – dB dBm 22.5 7 6 ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, VCE = 2.5 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 25.5 23 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.45 21 IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 23.5 7.5 Table 9 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 2.5 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 23.5 21 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 19.5 IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24.5 8 Table 10 – Unit – dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 2.5 V, f = 2.4 GHz Parameter Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 22 19 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.5 18 Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 25 8 Datasheet dB Unit Max. – dB IC = 15 mA IC = 5 mA dBm 7 Note or test condition ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 11 AC characteristics, VCE = 2.5 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 17.5 16 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.65 15 IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 25.5 8.5 Table 12 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 2.5 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 12.5 11.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.85 10.5 IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Note: Datasheet – dB dBm 24 8 ZS = ZL = 50 Ω, IC = 15 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 8 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 20 75µA 18 65µA 16 55µA 14 45µA I C [mA] 12 10 35µA 8 25µA 6 15µA 4 5µA 2 0 0 0.5 1 1.5 V 2 CE Figure 3 2.5 3 3.5 [V] Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 −2 10 −1 0 10 I C Figure 4 Datasheet 10 [mA] 1 10 2 10 DC current gain hFE = f(IC), VCE = 2.5 V 9 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 2 10 1 10 0 10 −1 [mA] 10 −2 I C 10 −3 10 −4 10 −5 10 0.5 0.6 V Figure 5 0.7 [V] 0.8 0.9 BE Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2.5 V 0 10 −1 10 −2 10 I B [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.6 V Figure 6 Datasheet 0.7 [V] 0.8 0.9 BE Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2.5 V 10 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics −4 10 −5 10 −6 I B [A] 10 −7 10 −8 10 −9 10 0.5 0.6 0.7 V Figure 7 Datasheet EB 0.8 [V] Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2.5 V 11 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 60 55 3.00V 50 45 fT [GHz] 40 2.50V 35 30 25 20 2.00V 15 10 1.50V 1.00V 0.50V 5 0 Figure 8 0 5 10 15 20 IC [mA] 25 30 35 40 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 0.085 0.08 0.07 C CB [pF] 0.075 0.065 0.06 0.055 0 0.5 1 V Figure 9 Datasheet CB 1.5 [V] 2 2.5 3 Collector base capacitance CCB = f(VCB), f = 1 MHz 12 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 36 33 30 Gms 27 G [dB] 24 21 Gma 18 15 |S 21| 2 12 9 6 3 Figure 10 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Gain Gma, Gms, IS21I2 = f(f), VCE = 2.5 V, IC = 15 mA 36 0.45GHz 33 30 0.90GHz 27 1.50GHz G max [dB] 24 1.90GHz 21 2.40GHz 18 3.50GHz 15 12 5.50GHz 9 6 3 0 10 20 30 40 50 I [mA] C Figure 11 Datasheet Maximum power gain Gmax = f(IC), VCE = 2.5 V, f = parameter 13 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 36 33 0.45GHz 30 0.90GHz 27 1.50GHz 1.90GHz 2.40GHz G max [dB] 24 21 18 3.50GHz 15 5.50GHz 12 9 6 3 0.5 1 1.5 2 V Figure 12 CE 2.5 3 3.5 [V] Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter 30 28 26 24 22 OIP3 [dBm] 20 18 16 2V, 2400MHz 2V, 3500MHz 2.5V, 2400MHz 2.5V, 3500MHz 14 12 10 8 6 4 2 0 Figure 13 Datasheet 0 5 10 15 IC [mA] 20 25 30 3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameter 14 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 5 4 3 6 1 2 3 0 9 5 4 6 7 −1 6 7 0 9 5 1 2 3 15 10 8 4 7 8 −4 −3 −2 IC [mA] 20 8 4 3 2 1 0 −1 1.5 6 5 4 3 2 1 0 −1 1 7 6 5 10 4 3 2 1 0 2 VCE [V] 5 2.5 3 5 9 7 3 4 8 30 10 Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 3.5 GHz 6 Figure 14 2 −1 25 5 1 0 −4 −3 2 − −8 −7 −6 −5 30 11 12 14 15 16 7 8 1 1 19 20 212 2 23 24 25 13 14 15 16 17 1819 20 212 2 6 7 8 9 2 13 10 11 1 20 25 26 23 10 15 8 14 15 16 17 1 19 20 21 2 13 11 1 26 23 24 22 IC [mA] 5 25 24 16 17 18 19 20 4 5 10 1 1 21 1 Figure 15 Datasheet 1.5 22 25 24 23 2 VCE [V] 2.5 3 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 3.5 GHz 15 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 10 GHz 0.1 10 10.0 0.1 0 10.0 9.0 0.2 0.3 0.4 0.5 1 7.0 1.5 5.0 7.0 9.0 4.0 −0.1 5.0 4.0 3.0 2.0 2 3 4 5 0.03 −10 1.0 3.0 −0.2 −5 −4 2.0 1.0 −0.3 −3 −0.4 −0.5 −2 −1.5 5 mA 15 mA −1 Figure 16 Input reflection coefficient S11 = f(f), VCE = 2.5 V, IC = 5 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 10.0 4 0.2 5 9.0 0.03 to 10 GHz 0.1 10 0.1 0 8.0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.03 0.03 7.0 −0.1 −10 1.0 6.0 −0.2 −5 5.0 4.0 −0.3 −4 1.0 3.0 2.0 −3 −0.4 −0.5 −2 −1.5 −1 Figure 17 Datasheet 5 mA 15 mA Output reflection coefficient S22 = f(f), VCE = 2.5 V, IC = 5 / 15 mA 16 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 3.5 4.0 2.4 1.9 5.0 0.1 0.1 0 0.2 0.3 0.4 0.5 10 1.5 5.5 6.0 2.4 3.5 1 1.50.9 5.5 0.9 2 0.9 3 0.5 4 5 5.5 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 5 mA −1.5 10 mA −1 Figure 18 15 mA Source impedance for minimum noise figure ZS,opt = f(f), VCE = 2.5 V, IC = 5 / 10 / 15 mA 1.4 1.2 15mA 10mA 5mA NFmin [dB] 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 f [GHz] Figure 19 Datasheet Noise figure NFmin = f(f), VCE = 2.5 V, ZS = ZS,opt, IC = 5 / 10 / 15 mA 17 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1.4 1.2 5.5GHz NFmin [dB] 1 3.5GHz 2.4GHz 0.9GHz 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 I [mA] 16 18 20 22 24 C Figure 20 Noise figure NFmin = f(IC), VCE = 2.5 V, ZS = ZS,opt, f = parameter 2 1.8 1.6 NF50 [dB] 1.4 1.2 5.5GHz 1 3.5GHz 2.4GHz 0.9GHz 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 I [mA] 16 18 20 22 24 C Figure 21 Note: Datasheet Noise figure NF50 = f(IC), VCE = 2.5 V, ZS = 50 Ω, f = parameter The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 22 Package outline Figure 23 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 24 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 25 Datasheet 1.1 ] Tape dimensions 19 v2.0 2018-09-26 BFP842ESD SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-rdc1521722509835 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury