BFP843FH6327XTSA1

BFP843F SiGe:C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list • • • • • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies: NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain Gma = 18 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP843F / BFP843FH6327XTSA1 TSFP-4-1 1=B 2=E 3=C 4=E Marking Pieces / Reel T2s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector emitter voltage 1) Collector base voltage 2) VCEO – VCES VCBO Unit Note or test condition V Open base Max. 2.25 2.0 TA = -55 °C, open base 2.25 E-B short circuited 2.0 TA = -55 °C, E-B short circuited 2.9 Open emitter 2.6 TA = -55 °C, open emitter Base current IB -5 5 Collector current IC – 55 RF input power PRFin ESD stress pulse VESD Total power dissipation 3) Ptot Junction temperature TJ Storage temperature TStg mA – 20 dBm -1.5 1.5 kV HBM, all pins, acc. to JESD22-A114 – 125 mW TS ≤ 100 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCES is identical to VCEO due to design. VCBO is similar to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 395 – Unit Note or test condition K/W – 130 120 110 100 90 P tot [mW] 80 70 60 50 40 30 20 10 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – Collector emitter leakage current ICES – – 400 1) nA VCE = 1.5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 1.5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 150 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 260 μA 450 Values Min. Typ. Max. – 5.23 0.06 – VEB = 0.5 V, IC = 0, open collector VCE = 1.8 V, IC = 15 mA, pulse measured Unit Note or test condition pF f = 1 MHz f = 1 GHz VCB = 1.8 V, VBE = 0, emitter grounded Collector base capacitance 2) CCB Collector emitter capacitance CCE 0.46 f = 1 MHz, VCE = 1.8 V, VBE = 0, base grounded Emitter base capacitance CEB 0.7 f = 1 MHz, VEB = 0.4 V, VCB = 0, collector grounded 1 2 Maximum values not limited by the device but by the short cycle time of the 100% test Including integrated feedback capacitance Datasheet 5 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 1.8 V, f = 450 MHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 25 24.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.8 22.5 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Datasheet – dB dBm 24.5 7 6 ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 1.8 V, f = 900 MHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 24.5 24 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.8 22 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 24 8 Table 8 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain – Gma |S21|2 24 23 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.85 21 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 9 dB dBm 23 7 ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 23.5 22.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.9 20.5 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 23.5 7.5 Datasheet – Unit – dB dBm 7 ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 22.5 21.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.95 20 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 22.5 6.5 Table 11 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 21 19.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.0 18 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 22 6 Table 12 – Unit – dB dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 18 16.5 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.1 15.5 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB 19.5 4.5 Datasheet – Unit – dB dBm 8 ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Values Min. Typ. – Unit Note or test condition Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 13.5 10 IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.7 10 IC = 8 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Note: Datasheet – dB dBm 16.5 0.5 ZS = ZL = 50 Ω, IC = 15 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values, stated in this chapter the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams IC [mA] 22 20 80µA 18 70µA 16 60µA 14 50µA 12 40µA 10 30µA 8 20µA 6 4 10µA 2 0 0 0.5 1 1.5 2 2.5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 −2 10 Figure 4 Datasheet −1 10 0 10 Ic [mA] 1 10 2 10 DC current gain hFE = f(IC), VCE = 1.8 V 10 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 2 10 1 10 0 10 C I [mA] −1 10 −2 10 −3 10 −4 10 −5 10 Figure 5 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V 0 10 −1 10 −2 10 B I [mA] −3 10 −4 10 −5 10 −6 10 −7 10 Figure 6 Datasheet 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V 11 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics −6 10 −7 10 −8 IB [A] 10 −9 10 −10 10 −11 10 Figure 7 Datasheet 0.3 0.35 0.4 0.45 0.5 0.55 VEB [V] 0.6 0.65 0.7 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V 12 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 24 22 20 18 OIP3 [dBm] 16 14 12 10 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 8 6 4 2 0 Figure 8 0 5 10 15 20 IC [mA] 25 30 35 3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters 35 4 5 9 10 11 6 7 8 12 14 15 30 13 9 10 11 14 15 20 21 17 18 19 20 12 21 16 18 20 16 19 17 IC [mA] 25 17 18 13 19 20 16 15 10 17 16 15 5 14 13 1 Figure 9 Datasheet 17 18 19 18 12 1.2 19 20 20 20 19 19 1820 18 17 17 16 16 15 15 14 13 14 13 12 12 1.4 1.6 1.8 VCE [V] 2 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 13 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 35 −4−3−2 −6 1 2 4 6 5 7 −1 0 1 3 2 6 4 5 30 25 6 5 3 15 6 5 4 IC [mA] 7 3 20 4 3 2 1 10 0 −2 −3 −4 5 −5 1 2 1 0 −1 −2 −3 −4 −5 1.4 1.2 4 3 3 2 1 0 −1 −2 −3 −4 −5 1.6 −1 1.8 2 VCE [V] Figure 10 Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 26 24 22 Gma 20 18 2 |S21| G [dB] 16 14 12 10 8 6 4 2 0 Figure 11 Datasheet 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 15 mA 14 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 28 26 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 24 22 20 3.50GHz Gmax [dB] 18 5.50GHz 16 14 12 10.00GHz 12.00GHz 10 8 6 4 2 0 Figure 12 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 IC [mA] Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz 28 26 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 24 Gmax [dB] 22 3.50GHz 20 5.50GHz 18 16 14 10.00GHz 12.00GHz 12 10 0 0.5 1 1.5 2 2.5 VCE [V] Figure 13 Datasheet Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz 15 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 12.0 0.3 3 12.0 11.0 11.0 4 10.0 10.0 0.2 9.0 0.1 0.1 0.03 to 12 GHz 8.0 10 7.0 8.0 0 5 9.0 6.0 7.0 0.2 0.3 0.4 0.5 5.04.0 1 3.0 6.0 2.0 1.5 2 3 4 5 1.0 5.0 −0.1 4.0 −10 1.0 3.0 2.0 0.03 0.03 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8.0mA 15mA −1 Figure 14 Input reflection coefficient S11 = f(f ), VCE = 1.8 V, IC = 8 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.45 to 10 GHz 0.1 10 0.1 0 0.2 0.3 0.4 0.5 5.5 3.5 2.4 1.9 0.9 1 1.5 0.45 0.45 5.5 2 3 4 5 −0.1 −10 10.0 10.0 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 Figure 15 Datasheet 8mA 15mA Source impedance for minimum noise figure ZS,opt = f(f) , VCE = 1.8 V, IC = 8 / 15 mA 16 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 12.0 0.3 12.0 0.2 3 11.0 11.0 10.0 10.0 9.0 9.0 4 5 0.03 to 12 GHz 0.1 10 8.0 8.0 0.1 0 0.2 0.3 0.4 0.5 7.0 7.0 6.0 −0.1 1 1.5 2 3 4 5 6.0 1.0 5.0 3.0 2.0 4.0 5.0 4.0 −0.2 3.0 2.0 −10 1.0 0.03 0.03 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8.0mA 15mA −1 Figure 16 Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 8 / 15 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 IC = 15mA 0.6 IC = 8mA 0.4 0.2 0 Figure 17 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 8 / 15 mA 17 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Electrical characteristics 3 f = 10GHz 2.8 2.6 f = 5.5GHz 2.4 f = 3.5GHz 2.2 f = 2.4GHz NFmin [dB] 2 f = 0.9GHz 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 IC [mA] Figure 18 Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter in GHz 4 f = 10GHz 3.5 f = 5.5GHz f = 3.5GHz 3 f = 2.4GHz NF50 [dB] 2.5 f = 0.9GHz 2 1.5 1 0.5 0 0 5 10 15 20 25 IC [mA] Figure 19 Note: Datasheet Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Package information TSFP-4-1 4 Package information TSFP-4-1 Figure 20 Package outline Figure 21 Foot print Figure 22 Marking layout example Figure 23 Tape dimensions Datasheet 19 v2.0 2018-09-26 BFP843F SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-apw1519121554586 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury