BFR106E6327HTSA1

BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR106 Marking R7s Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage, VCEO Value Unit V TA = 25°C 16 TA = -55°C 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 210 Base current IB 21 Total power dissipation1) Ptot 700 mW Junction temperature TJ 150 °C Storage temperature TStg mA TS ≤ 76 °C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 105 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2013-11-21 BFR106 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 15 - - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current µA ICES VCE = 20 V, VBE = 0 - - 1 VCE = 10 V, VBE = 0 - 0.001 0.03 ICBO - 1 30 IEBO - 1 30 hFE 70 100 140 Collector-base cutoff current nA VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain - IC = 70 mA, VCE = 8 V, pulse measured 2 2013-11-21 BFR106 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 3.5 5 - Ccb - 0.85 1.2 Cce - 0.27 - Ceb - 3.9 - GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz - 1.8 - IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz - 3 - 3 2013-11-21 BFR106 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics (verified by random sampling) Power gain, maximum available1) dB Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 13 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz - 8.5 - |S21e|2 Transducer gain dB IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz - 10.5 - IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz - 5 - IP3 - 31 - P-1dB - 22 - Third order intercept point at output2) dBm VCE = 8 V, IC = 70 mA, f = 0.9 GHz , ZS=ZL =50Ω 1dB compression point IC = 70 mA, VCE = 8 V, ZS =ZL =50Ω, f = 0.9 GHz 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP value depends on termination of all intermodulation frequency components. 3 1G Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 4 2013-11-21 BFR106 Total power dissipation P tot = ƒ(TS) 750 mW 600 Ptot 550 500 450 400 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS 5 2013-11-21 BFR106 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. 6 2013-11-21 Package SOT23 7 BFR106 2013-11-21 BFR106 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2013-11-21