BFR193
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• fT = 8 GHz, NFmin = 1 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR193
Marking
RCs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
Base current
IB
10
Total power dissipation1)
Ptot
580
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
V
mA
TS ≤ 69°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1T
S is
2For
Value
Unit
140
K/W
measured on the collector lead at the soldering point to the pcb
calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR193
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 30 mA, VCE = 8 V, pulse measured
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BFR193
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
6
8
-
GHz
Ccb
-
0.66
1
pF
Cce
-
0.28
-
Ceb
-
2.25
-
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1
-
f = 1.8
-
1.6
-
IC = 30 mA, VCE = 8 V, ZS = ZSopt, Z L = ZLopt ,
f = 900 MHz
-
15
-
f = 1.8 GHz
-
10
-
Power gain, maximum available1)
Gma
|S21e|2
Transducer gain
dB
IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,
f = 900 MHz
-
13
-
f = 1.8 GHz
-
7.5
-
IP3
-
30
-
P-1dB
-
13
-
Third order intercept point at output2)
dBm
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
1dB Compression point
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
1/2
ma = |S21 / S12| (k-(k²-1) )
1G
2IP3
value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
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BFR193
Total power dissipation P tot = ƒ(TS)
600
Ptot
mW
400
300
200
100
0
0
20
40
60
80
100
120 °C
150
TS
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Package SOT23
5
BFR193
2014-04-04
BFR193
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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