BFR340FH6327XTSA1

BFR340F Low profile silicon NPN RF bipolar transistor Product description The BFR340F is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and high breakdown voltage characteristics make the device suitable for oscillators applications for frequencies as high as 3.5 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 1 dB at 1.9 GHz, 1.5 V, 1 mA High gain Gms = 16.5 dB at 1.8 GHz, 3 V, 5 mA OIP3 = 13 dBm at 1.8 GHz, 3 V, 5 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • Low noise amplifiers (LNAs) for FM and AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR340F / BFR340FH6327XTSA1 TSFP-3-1 1=B FAs 3000 2=E 3=C Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information TSFP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. – Unit Note or test condition V Open base Max. Collector emitter voltage VCEO 6 Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 2 Open collector Base current IB 2 Collector current IC 20 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 75 mW TS ≤ 110 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 530 – Unit Note or test condition K/W – 80 mW 60 40 Ptot 20 00 15 30 45 60 75 90 105 120 °C 150 Ts Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 6 9 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – 1 30 2) nA VCE = 4 V, VBE = 0, E-B short circuited 2 50 2) VCE = 10 V, VBE = 0, TA = 85 °C, E-B short circuited Collector base leakage current ICBO 1 30 2) VCB = 4 V, IE = 0, open emitter Emitter base leakage current IEBO 1 500 2) VEB = 1 V, IC = 0, open collector DC current gain hFE 120 160 VCE = 3 V, IC = 5 mA, pulse measured 90 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Transition frequency fT 11 14 – GHz VCE = 3 V, IC = 6 mA, f = 1 GHz Collector base capacitance CCB – 0.21 0.4 pF VCB = 5 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.17 – Emitter base capacitance CEB 0.11 2 VCE = 5 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VCE Bias-T RFOUT 3 VBE RFIN 1 Bias-T 2 GND Figure 2 Testing circuit Table 6 AC characteristics, f = 100 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin – – dB IC = 3 mA, VCE = 1.5 V IC = 3 mA, VCE = 1.5 V dBm 14 -3 IC = 5 mA, VCE = 3 V, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet 28 19 Note or test condition Max. 0.9 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 7 Typ. Unit Typ. 16.5 14 13 -1 6 Unit Note or test condition Max. – dB dBm IC = 5 mA IC = 5 mA, ZS = ZL = 50 Ω Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics Table 8 AC characteristics, f = 1.9 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin Table 9 – Symbol Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin – dB IC = 5 mA, VCE = 3 V IC = 1 mA, VCE = 1.5 V Values – Typ. 14.9 11.6 Unit Note or test condition Max. – dB 1.2 IC = 5 mA, VCE = 3 V IC = 1 mA, VCE = 1.5 V AC characteristics, VCE = 3 V, f = 3 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Datasheet Max. 1 Min. Note: 16.3 13.4 Note or test condition AC characteristics, f = 2.4 GHz Parameter Table 10 Typ. Unit Gms |S21|2 – Typ. 13 10 Unit Note or test condition Max. – dB IC = 5 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 7 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic AC diagrams 16 GHz 5V 12 3V fT 10 2V 8 1V 6 0.75V 4 2 0 0 2 4 6 mA 8 12 IC Figure 3 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 28 IP3 dBm 16 8 5V 3V 2.5V 2V 1.5V 1V 0 -8 -16 0 1 2 3 4 5 6 7 8 9 mA 11 IC Figure 4 Datasheet 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, f = 1.9 GHz, VCE = parameter 8 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics 28 IP3 dBm 16 8 5V 3V 2.5V 2V 1.5V 1V 0 -8 -16 0 1 2 3 4 5 6 7 8 9 mA 11 IC Figure 5 3rd order intercept point OIP3 = f(IC , VCE), ZS = ZL = 50 Ω, f = 100 MHz 0.4 pF Ccb 0.3 0.25 0.2 0.15 0.1 0.05 0 0 2 4 6 8 10 12 V 16 VCB Figure 6 Datasheet Collector base capacitance CCB = f(VCB), f = 1 MHz 9 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics 45 Ic=5mA dB G 35 30 5V 3V 2V 1V 0.75V 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 GHz 4 f Figure 7 Gain Gma, Gms = f(f), IC = 5 mA, VCE = parameter 24 dB Ic=5mA 20 G 18 16 14 12 10 8 6 4 0 5V 3V 2V 1V 0.75V 0.5 1 1.5 2 2.5 3 GHz 4 f Figure 8 Datasheet Transducer gain IS21I2 = f(f), IC = 5 mA, VCE = parameter 10 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics 24 dB 0.9GHz 20 18 G 1.8GHz 16 14 2.4GHz 12 3GHz 10 4GHz 8 6 4 0 2 4 6 8 10 mA 14 IC Figure 9 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter 22 dB Ic = 5mA 0.9GHz Gmax 20 19 0.9GHz G 18 S21 17 1.8GHz Gmax 16 15 1.8GHz 14 S21 13 12 11 10 0 1 2 3 4 5 6 V 8 VCE Figure 10 Datasheet Maximum power gain Gmax = f(VCE), transducer gain IS21I2 = f(VCE), IC = 5 mA, f = parameter in GHz 11 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics Figure 11 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.5 V, IC = parameter Figure 12 Noise figure NFmin = f(f), VCE = 1.5 V, ZS = ZS,opt, IC = 1 / 3 / 5 mA Datasheet 12 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Electrical characteristics Figure 13 Noise figure NFmin = f(IC), VCE = 1.5 V, ZS = ZS,opt, f = parameter in GHz Figure 14 Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = 1.9 GHz Note: Datasheet The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 13 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Package information TSFP-3-1 4 Package information TSFP-3-1 Figure 15 Package outline Figure 16 Foot print TYP E CODE NOTE OF MANUFACTURER P IN 1 Figure 17 Marking layout example Figure 18 Tape information Datasheet 14 Revision 2.0 2019-01-25 BFR340F Low profile silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 15 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-pky1525443005897 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. 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