BFR340L3E6327XTMA1

BFR340L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • Transition frequency of 14 GHz • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR340L3 Marking FA Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 2 Total power dissipation1) Ptot 60 mW Junction temperature TJ 150 °C Storage temperature TStg V mA TS ≤ 120°C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1T S is 2For Value Unit 500 K/W measured on the collector lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2013-09-03 BFR340L3 Electrical Characteristics at T A = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 5 mA, VCE = 3 V, pulse measured 2 2013-09-03 BFR340L3 Electrical Characteristics at TA = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 10 14 - Ccb - 0.17 0.4 Cce - 0.13 - Ceb - 0.12 - NFmin - 1.15 - dB Gms - 17.5 - - Gma - 13 - dB AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt, f = 1.8 GHz Power gain, maximum available1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 5 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz - 14 - f = 3 GHz - 10 - IP3 - 12.5 - P-1dB - -1 - Third order intercept point at output2) dBm VCE = 3 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50Ω 1dB compression point at output IC = 5 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz 1/2 ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2013-09-03 BFR340L3 Total power dissipation P tot = ƒ(TS) 70 mW P tot 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS 4 2013-09-03 Package TSLP-3-1 5 BFR340L3 2013-09-03 BFR340L3 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-09-03